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MMBT3904G

MMBT3904G

  • 厂商:

    BILIN(银河)

  • 封装:

    SOT23

  • 描述:

    MMBT3904G

  • 数据手册
  • 价格&库存
MMBT3904G 数据手册
Product specification NPN SWITCHING TRANSISTOR MMBT3904 FEATURES  Epitaxial planar die construction.  Complementary PNP type available Pb Lead-free (MMBT3906).  Collector Current Capability ICM =200mA.  Collector-emitter Voltage VCEO=40V.  MSL 1 APPLICATIONS  SOT-23 General switching and amplification ORDERING INFORMATION Type No. MMBT3904□ Marking Package Code 1AM SOT-23 □: none is for Lead Free package; “G” is for Halogen Free package. MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS Value UNIT VCBO collector-base voltage open emitter 60 V VCEO collector-emitter voltage open base 40 V VEBO emitter-base voltage open collector 6 V IC collector current (DC) 200 mA ICM peak collector current 200 mA IBM peak base current 100 mA Ptot total power dissipation 250 mW Tstg storage temperature -65 to +150 °C Tj junction temperature 150 °C STM0010A Tamb≤25°C www.gmesemi.com 1 Product specification NPN SWITCHING TRANSISTOR MMBT3904 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO collector cut-off current IEBO hFE MIN. MAX. IE = 0; VCB = 30 V - 50 nA emitter cut-off current IC = 0; VEB = 6 V - 50 nA DC current gain VCE = 1 V; IC= 0.1mA IC = 1mA IC = 10mA IC = 50mA IC = 100mA 60 80 100 60 30 300 - IC = 10mA; IB = 1mA - 200 mV IC = 50mA; IB = 5mA - 300 mV IC = 10mA; IB = 1mA 650 850 mV IC = 50mA; IB = 5mA - 950 mV VCE(sat) collector-emitter saturation voltage VBE(sat) base-emitter saturation voltage UNIT Cobo Output Capacitance IE = Ie= 0; VCB= 5V; f = 1MHz - 4 pF Cibo Input Capacitance IC = Ic = 0; VBE=500mV; f =1MHz - 8 pF fT transition frequency IC =10mA; VCE =20V; f =100MHz 300 - MHz F noise figure IC=100mA; VCE =5V; RS =1kΩ;f =10Hz to15.7kHz - 5 dB Switching times (between 10% and 90% levels); td delay time VCC=3Vdc, VBE=–0.5Vdc - 35 ns tr rise time IC=10mAdc, IB1=1mAdc - 35 ns ts storage time VCC=3Vdc, IC=10mAdc - 200 ns tf fall time IB1=IB2=1mAdc - 50 ns Note Pulse test: tp≤300 ms; d≤0.02. STM0010A www.gmesemi.com 2 Product specification NPN SWITCHING TRANSISTOR MMBT3904 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified STM0010A www.gmesemi.com 3 Product specification NPN SWITCHING TRANSISTOR MMBT3904 PACKAGE OUTLINE Plastic surface mounted package SOT-23 A SOT-23 E K B J D G H C Dim Min Max A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 D 0.30 0.50 E 0.35 0.48 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 All Dimensions in mm SOLDERING FOOTPRINT 0.95 0.95 2.00 0.90 Unit : mm 0.80 PACKAGE INFORMATION Device Package Shipping MMBT3904 SOT-23 3000/Tape&Reel STM0010A www.gmesemi.com 4
MMBT3904G 价格&库存

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