PSD751H

PSD751H SURFACE MOUNT SCHOTTKY BARRIER DIODES SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 30 VOLTS SOD-323 .091(2.30) 1.63(2.70) .063(1.60) .071(1.80) .045(1.15) .053(1.35) 0.15R .009(0.25) .016(0.40) 1 2 .031(0.80) .039(1.00) .0035(0.089) .015(0.377) .00(0.00) .004(0.10) FEATURES Extremely Low VF Very Small Conduction Losses Schottky Barrier Diodes Encapsulated in a SOD-323 Package DESCRIPTION These schottky barrier diodes are designed for high speed Switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and Portable applications where space is limited MAXIMUM RATING (TA=25 C unless otherwise noted) o Characteristics Breakdown Voltage Continuous Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (8.3ms1/2 Sine Wave) Storage Temperature o Symbol BV VR IO IFSM Tstg PSD751H 40 30 30 200 -40 to+125 Unit Volts Volts mAmps mAmps C ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristics Device Marking Maximum Instantneous Forward Voltage IF=1mA Maximum Instantneous Reverse Current (VR=30V) Typical Junction Capacitance (VR=10V, f=1MHz) www.paceleader.tw Symbol PSD751H JV Unit VF 0.37 Volts IR CJ 1 0.5 20 µAmps PF PSD751H SURFACE MOUNT SCHOTTKY BARRIER DIODES Electrical Characteristic Curves (Ta=25 C Unless Specified Otherwise) 1000m Typ. pulse measurement 100µ Ta=125 C Ta=75 C FORWARD CURRENT:IF (A) 12 5 10m 1m 100µ 10µ 1µ REVERSE CURRENT:IR(A) 100m C 10µ 1µ Ta = Ta=75 C Ta=25 C 100n Ta=25 C Ta= -25 C 10n Ta=-25 C Typ. pulse measurement 0 0.2 0.40 0.6 0.8 1.0 1.2 1.4 1n 0 5 10 15 20 25 30 35 Fig 1.Forward Characteristics FORWARD VOLTAGE :VF (V) FIG 2. Reverse Characteristics REVERSE VOLTAGE: VR(V) CAPACITANCE BETWEEN TERMINAL CT(pF 100 50 20 10 5 Ta=25 C f=1MHz 2 1 0 2 12 REVERSE VOLTAGE:VR(V) 4 6 8 10 14 FIG. 3 Capacitance Between Terminal Chacteristics www.paceleader.tw 2