2SD874

Transistor 2SD874, 2SD874A Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB766 and 2SB766A Unit: mm s Features q q q 0.4max. 45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD874 2SD874A 2SD874 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V 3 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 2 1 4.0–0.20 0.4±0.04 emitter voltage 2SD874A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V marking V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol : Z(2SD874) Y(2SD874A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD874 2SD874A 2SD874 2SD874A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz *2 min typ max 0.1 Unit µA V 30 60 25 50 5 85 50 0.2 0.85 200 20 0.4 1.2 160 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 MHz pF Rank classification Rank hFE1 Q 85 ~ 170 2SD874 2SD874A ZQ YQ R 120 ~ 240 ZR YR S 170 ~ 340 ZS YS Pulse measurement Marking Symbol 2.5±0.1 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.5±0.1 1.6±0.2 1.5±0.1 2.6±0.1 +0.25 V V V V 1 Transistor PC — Ta 1.4 2SD874, 2SD874A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 1.50 Ta=25˚C 1.25 IB=10mA 9mA 1.00 8mA 7mA 6mA 0.75 5mA 4mA 0.50 3mA 2mA 0.25 1mA 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Collector current IC (A) 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=10 600 VCE=10 200 VCB=10V Ta=25˚C fT — I E Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) 1 3 10 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C Forward current transfer ratio hFE 160 400 120 300 Ta=75˚C 200 25˚C 100 –25˚C 80 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 50 10 IE=0 f=1MHz Ta=25˚C Area of safe operation (ASO) Single pulse TC=25˚C Collector output capacitance Cob (pF) Collector current IC (A) 40 3 ICP 1 IC t=1s 0.3 DC 30 20 0.1 0.03 0 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 2SD874A 100 10 2SD874