2SD874A

2SD874A Elektronische Bauelemente 1A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-89 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A BC 3 E C 4 1 2 A CLASSIFICATION OF hFE (1) Product-Rank Range Marking 2SD874A-Q 85~170 YQ 2SD874A-R 120~240 YR 2SD874A-S 170~340 YS B F G H E D K J L REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 60 50 5 1 500 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Emitter-Base Breakdown Boltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT COB Min. 60 50 5 85 50 - Typ. 200 20 Max. 0.1 0.1 340 0.4 1.2 - Unit V V V μA μA V V MHz pF Test conditions IC=10μA, IE=0 IC=2mA, IB=0 IE=10μA, IC=0 VCB=20V, IE=0 VEB=4 V, IC=0 VCE=10V, IC= 500mA VCE=5V, IC= 1A IC=500mA, IB= 50mA IC=500mA, IB= 50mA VCE=10V, IC=50mA, f=200MHz VCB=10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Feb-2011 Rev. A Page 1 of 2 2SD874A Elektronische Bauelemente 1A , 60V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Feb-2011 Rev. A Page 2 of 2