Semiconductor Laser
LNC703PS
Semiconductor Laser for LBP(Laser Beam Printers)
ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1
Unit : mm
2
Overview
The LNC703PS is a near infrared GaAlAs laser diode which provides continuous oscillation in single mode and is stable at low operating current. This product is characterized by a low operating current and low drooping, making it suitable for a wide range of optical information equipment.
ø1.0 min.
0.4±0.1
110˚±1˚
LD 1 Junction plane 1.0±0.1 Reference plane Reference slot Kovar glass LD pellet Reference plane ø1.2max. 3-ø0.45 2 1 3 3
PD
High output (15 mW) for increased printing speed Stable single horizontal mode oscillation Low astigmatic difference Low drooping
6.5±0.5
0.5 max.
Low current operations : 40 mA (with 12 mW output)
1.2±0.1
Features
2.3±0.2 1.27 0.25
ø2.0 Bottom view
1: LD Anode 2: Common Case 3: PD Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 15 2 30 100 –10 to +60 – 40 to +80 Unit mW V V mW ˚C ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle
Horizontal direction Vertical direction
Symbol Ith IOP VOP λL θ//* θ ⊥* η IR IP θX θY Dr CW
Conditions PO = 12mW PO = 12mW PO = 12mW PO = 12mW PO = 12mW PO = 9mW/I(12mW) – I(3mW) VR (PIN) = 5V PO = 12mW, VR (PIN) = 5V PO = 12mW PO = 12mW PO = 12mW, f = 600Hz, duty10% to 90%
min 10 30 775 7 18 0.4
typ 20 40 2.0 785 10 25 0.7 0.3
max 35 70 2.5 795 12 32 1.0 0.1
Unit mA mA V nm deg. deg. mW/mA µA mA deg. deg. %
Differential efficiency Reverse current (DC) PIN photo current Optical axis accuracy Droop Oscillation mode
*
X direction Y direction
–2.0 –3.0 4
+2.0 +3.0 10
Single horizontal mode
θ// and θ⊥are the angles where the optical intencity is a half of its max. value. ( half full angle )
1
Semiconductor Laser
LNC703PS
PO — IOP
15 200 Ta = 25˚C 12.5
I—V
100
Far field pattern
80 100
I (mA)
10.0
Relative radiant power ∆PO
Radiant power PO (mW)
60
7.5
0
Current
40 θ// 20 θ⊥
5.0
–100 2.5
0
0
20
40
60
–200 –4
–2
0
2
4
0 40
20
0
20
40
Operating current IOP (mA)
Voltage V (V)
Angle θ (deg.)
Ith — Ta
10 2 10 3
IOP — Ta
PO = 12mW 500
IP — Ta
VR (PIN) = 5V PO = 12mW
IOP (mA)
Ith (mA)
IP (µA) PIN photo current
10 30 50 70 10 2 10 – 10
400
Threshold current
Operating current
10
300
200
1 – 10
10
30
50
70
100 –10
10
30
50
70
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
PO — Ta
20 10 2
Id — Ta
VR (PIN) = 30V
10
Radiant power PO (mW)
PIN dark current Id (nA)
10 30 50 70
15
1
10
10 –1
5
10 –2
0 – 10
10 –3 – 10
10
30
50
70
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
2
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