Semiconductor Laser
LNC707PS
High Power Output Semiconductor Laser
Overview
T he LNC707PS is a near infrared GaAlAs laser diode which provides continuous oscillation in single mode and is stable at low operating current. LNC707PS uses a small package, and is capable of operating continuously at high temperatures with high output (60 mW). It can be used in a wide range of applications as a light source for optical disk memory and optical information devices. In particular, it can be used in making equipment portable due to its low current operations.
ø1.0 min. ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1
Unit : mm
2
0.4±0.1
110˚±1˚
LD 1 Junction plane 1.0±0.1 Reference plane Reference slot Kovar glass LD pellet Reference plane ø1.2max. 3-ø0.45 2 1 3 3
PD
High power output : 60 mW Stable single horizontal mode oscillation Small size package
6.5±0.5
Low current operations : 70 mA (with 60 mW output)
0.5 max.
Features
1.2±0.1
2.3±0.2 1.27 0.25
ø2.0 Bottom view
1: LD Anode 2: Common Case 3: PD Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 60 2 30 100 –10 to +60 – 40 to +80 Unit mW V V mW ˚C ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle
Horizontal direction Vertical direction
Symbol Ith IOP VOP λL θ//* θ ⊥* η IR IP θX θY CW
Conditions PO = 60mW PO = 60mW PO = 60mW PO = 60mW PO = 60mW PO = 55mW/I(60mW – 5mW) VR (PIN) = 5V PO = 60mW, VR (PIN) = 5V PO = 60mW PO = 50mW
min 15 70 778 7 17 0.7
typ 25 100 2.0 784 10 21 0.9 0.2
max 35 130 2.5 790 13 25 1.2 0.1
Unit mA mA V nm deg. deg. mW/mA µA mA deg. deg.
Differential efficiency Reverse current (DC) PIN photo current Optical axis accuracy Oscillation mode
*
X direction Y direction
–2.0 –3.0
+2.0 +3.0
Single horizontal mode
θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )
1
Semiconductor Laser
LNC707PS
PO — IOP
60 200 Ta = 25˚C 50
I—V
100
Far field pattern
80 100
I (mA)
40
Relative radiant power ∆PO
PO (mW)
60
θ//
θ⊥
Radiant power
30
0
Current
40
20
–100 10
20
0
0
40
80
120
–200 –4
–2
0
2
4
0 40
20
0
20
40
Operating current IOP (mA)
Voltage V (V)
Angle θ (deg.)
Ith — Ta
10 2 10 3
IOP — Ta
PO = 60mW 400
IP — Ta
VR (PIN) = 5V PO = 60mW
IOP (mA)
Ith (mA)
IP (µA) PIN photo current
10 30 50 70 10 2 10 – 10
300
Threshold current
Operating current
10
200
100
1 – 10
10
30
50
70
0 –10
10
30
50
70
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
PO — Ta
100 10 2
Id — Ta
VR (PIN) = 30V
80
10
PO (mW)
Id (nA) PIN dark current
60
1
Radiant power
40
10 –1
20
10 –2
0 – 10
10
30
50
70
10 –3 – 10
10
30
50
70
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
2
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