UN1217

Transistors with built-in Resistor UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L Silicon NPN epitaxial planer transistor For digital circuits 6.9±0.1 1.5 2.5±0.1 1.0 Unit: mm s q q 0.4 1.5 R0.9 R0.9 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 1.0 2.4±0.2 2.0±0.2 0.45±0.05 2 1 2.5 1.0±0.1 R 0. 7 0.85 0.55±0.1 s Resistance by Part Number q q q q q q q q q q q q q q q UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218 UN1219 UN1210 UN121D UN121E UN121F UN121K UN121L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 10kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 3 2.5 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection R1 1.25±0.05 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 400 150 –55 to +150 Unit V V mA mW ˚C ˚C 4.1±0.2 4.5±0.1 1 Transistors with built-in Resistor UN1211/1212/1213/1214/1215/1216/1217/1218/ 1219/1210/121D/121E/121F/121K/121L s Electrical Characteristics Parameter Collector cutoff current UN1211 UN1212/1214/121E/121D Emitter cutoff current UN1213 UN1215/1216/1217/1210 UN121F/121K UN1219 UN1218/121L Collector to base voltage Collector to emitter voltage UN1211 Forward current transfer ratio UN1212/121E UN1213/1214 UN1215*/1216*/1217*/1210* UN121F/121D/1219 UN1218/121K/121L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN1213/121K UN121D UN121E Transition frequency UN1211/1214/1215/121K UN1212/1217 Input resistance UN1213/121D/121E/1210 UN1216/121F/121L UN1218 UN1219 UN1211/1212/1213/121L UN1214 Resistance ratio UN1218/1219 UN121D UN121E UN121F UN121K (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 hFE VCE = 10V, IC = 5mA 80 160 30 20 VCE(sat) VOH IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOL VCC = 5V, VB = 3.5V, RL = 1kΩ VCC = 5V, VB = 10V, RL = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 80 10 22 R1 (–30%) 47 4.7 0.51 1 0.8 0.17 0.08 R1/R2 1.0 0.21 0.1 4.7 2.14 0.47 2.13 1.2 0.25 0.12 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 MHz V 0.25 V V 460 V V mA Unit µA µA * hFE rank classification (UN1215/1216/1217/1210) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Common characteristics chart PT — Ta 500 Total power dissipation PT (mW) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN1211 IC — VCE 160 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1 120 100 80 60 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C 200 25˚C 100 –25˚C 0.2mA 40 20 0 0 2 4 6 8 10 12 25˚C Ta=75˚C 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Characteristics charts of UN1212 IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C 200 25˚C –25˚C 0.3mA 60 40 20 0 0 2 4 6 8 10 12 0.2mA 25˚C Ta=75˚C 100 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN1213 IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25˚C hFE — IC VCE=10V Collector current IC (mA) 120 100 80 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C Ta=75˚C Forward current transfer ratio hFE 140 IB=1.0mA 350 300 250 200 150 100 50 0 Ta=75˚C 25˚C –25˚C 60 40 20 0 0 2 4 6 8 10 12 0.2mA 0.1mA 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 4 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN1214 IC — VCE 160 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 400 VCE=10V 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C IB=1.0mA Collector current IC (mA) 120 100 80 60 40 20 0 0 2 4 6 8 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 350 300 250 200 25˚C 150 –25˚C 100 50 0 Ta=75˚C 0.2mA 0.1mA 10 12 –25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 10000 f=1MHz IE=0 Ta=25˚C 3000 IO — VIN VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 5 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Characteristics charts of UN1215 IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 350 300 250 200 25˚C 150 100 50 0 –25˚C Ta=75˚C Collector current IC (mA) 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA Ta=75˚C –25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN1216 IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V 350 Ta=75˚C 300 250 –25˚C 200 150 100 50 0 25˚C Ta=25˚C 140 IB=1.0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C 120 100 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 80 60 40 20 0 0 2 4 6 8 0.4mA 0.3mA 0.2mA 0.1mA –25˚C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Forward current transfer ratio hFE Collector current IC (mA) Collector current IC (mA) 6 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN1217 IC — VCE 120 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE — IC VCE=10V 100 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Forward current transfer ratio hFE Collector current IC (mA) Ta=25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 350 300 250 200 Ta=75˚C 150 100 50 0 25˚C –25˚C 80 0.4mA 0.3mA 0.2mA 60 Ta=75˚C 40 20 0.1mA –25˚C 0.3 1 3 10 30 100 0 0 2 4 6 8 10 12 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 7 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Characteristics charts of UN1218 IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 160 VCE=10V 200 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 –25˚C 0.01 0.1 25˚C Forward current transfer ratio hFE Collector current IC (mA) 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 120 Ta=75˚C 80 25˚C –25˚C 40 120 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0 0 2 4 6 8 0.1mA 10 12 80 40 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN1219 IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE=10V 200 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 0.01 0.1 Forward current transfer ratio hFE 30 Collector current IC (mA) 120 120 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 80 Ta=75˚C 25˚C –25˚C 80 40 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 8 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C VIN — IO 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN1210 IC — VCE 60 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 Ta=75˚C 250 25˚C 200 150 100 50 0 –25˚C Collector current IC (mA) 40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA 30 0.3mA 20 10 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C 10000 3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 9 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Characteristics charts of UN121D IC — VCE 30 VCE(sat) — IC 100 hFE — IC IC/IB=10 160 VCE=10V Ta=75˚C 25˚C –25˚C 120 Collector to emitter saturation voltage VCE(sat) (V) 25 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C IB=1.0mA 20 15 0.2mA 10 0.1mA Forward current transfer ratio hFE 100 Collector current IC (mA) Ta=25˚C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA 80 Ta=75˚C 40 5 0 0 2 4 6 8 10 12 0 0.3 1 3 10 30 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C 10000 3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN121E IC — VCE 60 VCE(sat) — IC 100 hFE — IC IC/IB=10 160 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25˚C 0.9mA 0.6mA 0.8mA Collector current IC (mA) 120 Ta=75˚C 25˚C –25˚C 40 0.3mA 0.4mA 0.5mA 0.2mA 30 80 0.1mA 20 40 10 –25˚C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 0 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 10 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UN121F IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE=10V 200 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Ta=75˚C Forward current transfer ratio hFE Collector current IC (mA) 160 0.9mA 0.8mA 0.7mA 0.6mA 120 Ta=75˚C 80 25˚C –25˚C 120 IB=1.0mA 0.5mA 0.4mA 0.3mA 80 40 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 –25˚C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=5V Ta=25˚C 100 30 VO=0.2V Ta=25˚C 10000 3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 11 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Characteristics charts of UN121K IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 240 hFE — IC VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.2mA 1.0mA 0.8mA 80 0.6mA 0.4mA 0.2mA 0 0 2 4 6 8 10 12 160 Ta=75˚C 120 25˚C 80 –25˚C 40 120 1 25˚C 0.1 Ta=75˚C 40 –25˚C 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 VIN — IO f=1MHz IE=0 Ta=25˚C 100 30 VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 1 3 10 30 100 10 3 1 0.3 0.1 0.03 3 2 1 0 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UN121L IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 hFE — IC 240 VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA 160 Ta=75˚C 1 120 25˚C Ta=75˚C 25˚C 0.1 –25˚C –25˚C 80 40 0.2mA 0 0 2 4 6 8 10 12 40 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 12 UN1211/1212/1213/1214/1215/1216/1217/1218/ Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L Cob — VCB 6 100 f=1MHz IE=0 Ta=25˚C IO — VIN VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 10 3 1 2 0.1 1 0 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) 13