BAT54DTB6

BAT54TB6/ATB6/CTB6/STB6/DTB6 SURFACE MOUNT SCHOTTKY DIODE ARRAYS VOLTAGE FEATURES Isolated diode arrays for significant board space savings Surface mount package ideally suited for automatic insertion Extremely Fast Switching Speed Very Low VF: 0.347V (Typ) at IF = 10mA In compliance with EU RoHS 2002/95/EC directives 30 Volts POWER 200mWatts SOT-563 MECHANICAL DATA PRELIMINARY Case : SOT-563 plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx Weight : 0.003 gram Marking : BAT54TB6 TH BAT54ATB6 TJ BAT54CTB6 TY BAT54STB6 T6 BAT54DTB6 TL ABSOLUTE RATINGS (each diode) Parameter Maximum Reverse Voltage Peak Reverse Voltage Continuous Forward Current Symbol VR VRRM IF Value 30 30 0.2 Units V V A THERMAL CHARACTERISTICS Parameter Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Junction Temperature Storage Temperature Symbol PTOT RθJA TJ TSTG Value 200 625 -55 to 125 -55 to 150 Units mW O C/W O C C O NOTE: 1. FR-4 Board = 70 x 60 x 1mm. BAT54TB6 BAT54ATB6 BAT54CTB6 BAT54STB6 BAT54DTB6 REV.0.3-JAN.15.2010 PAGE . 1 BAT54TB6/ATB6/CTB6/STB6/DTB6 ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) Parameter Reverse Breakdown Voltage Reverse Current Symbol V(BR) IR Test Condition I R=100 uA VR=25 V I F=0.1mA I F=1.0mA I F=10mA I F=30mA I F=100mA VR=1V, f=1.0MHZ MIN. 30 TYP. 0.347 MAX. 2.0 0.24 0.32 0.40 0.50 1.00 10 Units V μA Forward Voltage VF V PRELIMINARY Total Capacitance CT pF ELECTRICAL CHARACTERISTICS CURVES 10 T J =75 C O I R , Reverse Current(uA) 1.0 mA J J 0.1 T J =25 C O J J 0.01 T J =-25 C O J 0.001 0 5 10 15 20 25 30 V R , Reverse Voltage(V) Fig. 1- Typical Reverse Leakage Fig. 2- Forward Characteristics 14 12 CT, Total Capacitance (pF) 10 8 6 4 2 0 0 10 20 30 VR, Reverse Voltage (V) Fig. 3- Typical Total capacitance REV.0.3-JAN.15.2010 PAGE . 2