BLV90

DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor Product specification February 1996 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES BLV90 • diffused emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance at Ta = 25 °C in a common-emitter class-B circuit.(1) MODE OF OPERATION Narrow band; CW VCE V 12.5 9.6 Note 1. Device mounted on a printed-circuit board (see Fig.6). PIN CONFIGURATION PINNING - SOT172D. PIN 1 handbook, halfpage f MHz 900 900 PL W 1 1 Gp dB > 7.5 typ. 7.0 ηC % > 50 typ. 57 DESCRIPTION emitter base collector emitter 2 1 3 4 3 2 4 Top view MSB007 Fig.1 Simplified outline. SOT172D. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. February 1996 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current DC or average (peak value); f > 1 MHz Total power dissipation f > 1 MHz; Tmb < 105 °C Storage temperature Operating junction temperature Ptot(rf) Tstg Tj max. max. IC; IC(AV) ICM max. max. VCBO VCEO VEBO max. max. max. BLV90 36 V 16 V 3V 0.2 A 0.6 A 3.5 W 200 °C −65 to + 150 °C handbook, halfpage 5 MDA389 Ptot(rf) (W) 4 II I 3 2 1 0 0 I Continuous RF operation (f > 1 MHz) II Short-time RF operation during mismatch (f > 1 MHz) 40 80 120 160 Tmb (°C) Fig.2 Power/temperature curve. THERMAL RESISTANCE Dissipation = 2.25 W From junction to ambient(1) (f > 1 MHz) Ta = 25 °C From junction to mounting base Tmb = 25 °C (f > 1 MHz) Note 1. Device mounted on a printed-circuit board (see Fig.6). Rth j-mb (RF) max. 19 K/W Rth j−a (RF) max. 60 K/W February 1996 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 2.5 mA Collector-emitter breakdown voltage open base; IC = 10 mA Emitter-base breakdown voltage open collector; IE = 0.5 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain IC = 0.15 A; VCE = 10 V Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12.5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12.5 V Collector-mounting base capacitance Cre Cc-mb typ. typ. Cc typ. hFE > 25 ESBR > ICES < V(BR)EBO > V(BR)CEO > V(BR)CBO > BLV90 36 V 16 V 3V 1 mA 0.3 mJ 1.8 pF 1.0 pF 0.5 pF handbook, halfpage 120 MDA390 handbook, halfpage 4 MDA391 hFE VCE = 12.5 V 10 V Cc (pF) 3 80 2 40 1 0 0 150 300 450 IC (mA) 600 0 0 4 8 12 VCB (V) 16 Fig.3 Tj = 25 °C; typical values. Fig.4 IE = ie = 0; f = 1 MHz; typical values. February 1996 4 Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION RF performance in CW operation (common-emitter circuit, class-B): f = 900 MHz; Ta = 25 °C MODE OF OPERATION narrow band; CW VCE V 12.5 9.6 handbook, full pagewidth BLV90 PL W 1 1 > Gp dB 7.5 > typ. 9.0 typ. 7.0 L9 R2 C5 C6 ηC % 50 typ. 60 typ. 57 +VCC R1 L8 C1 50 Ω ,,,,,, ,,,,,,,,, ,,,,,, ,,,,,,,,, L2 L5 C4 C7 L1 L3 T.U.T. L4 L6 L7 C2 C3 C8 C9 MDA392 C10 50 Ω Fig.5 Class-B test circuit at f = 900 MHz. List of components: C1 C2 C3 C4 C5 C6 C7 C8 L1 L2 L3 L4 L5 L6 L8 R1 = C10 = 33 pF multilayer ceramic chip capacitor = C9 = 1.4 to 5.5 pF film dielectric trimmer (cat. no. 2222 809 09001) = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) = 5.6 pF multilayer ceramic chip capacitor(1) = 10 pF multilayer ceramic chip capacitor = 330 pF multilayer ceramic chip capacitor = 3.9 pF multilayer ceramic chip capacitor(1) = 1.2 to 3.5 pF film dielectric trimmer (cat. no. 2222 809 05001) = L7 = 50 Ω stripline (30.8 mm × 2.4 mm) = 60 nH; 4 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2 × 5 mm = 38 Ω stripline (16.0 mm × 3.5 mm) = 38 Ω stripline (11.0 mm × 3.5 mm) = 280 nH; 15 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2 × 5 mm = 50 Ω stripline (41.2 mm × 2.4 mm) = L9 = Ferroxcube wideband HF choke, grade 3B (cat. no. 4312 020 36642) = R2 = 10 Ω ± 5%; 0.25 W metal film resistor L1, L3, L4, L6 and L7 are striplines on a double Cu-clad printed-circuit board with P.T.F.E. fibre-glass dielectric (εr = 2.2); thickness 1⁄32 inch; thickness of copper-sheet 2 × 35 µm. Notes 1. American Technical Ceramics capacitor type 100A or capacitor of same quality. 2. Device mounted on a printed-circuit board (see Fig.6). February 1996 5 Philips Semiconductors Product specification UHF power transistor BLV90 handbook, full pagewidth 160 mm copper straps 80 mm rivets M2 +VCC L9 L8 C6 C5 L5 L3 L1 C2 C3 B E C8 C9 E L4 C C7 L6 L7 C10 R2 C1 R1 L2 MDA393 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as groundplane. Earth connections are made by hollow rivets and also by fixing-screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the groundplane. Fig.6 Printed-circuit board and component lay-out for 900 MHz class-B test circuit. February 1996 6 Philips Semiconductors Product specification UHF power transistor BLV90 handbook, halfpage 1.6 MDA394 handbook, halfpage 12 MDA395 120 ηC (%) PL (W) 1.2 Gp (dB) 8 Gp ηC 80 0.8 4 0.4 40 0 0 0.1 0.2 PS (W) 0.3 0 0 0.4 0.8 1.2 PL (W) 0 1.6 f = 900 MHz; class-B operation; typical values.  Tmb = 25 °C; VCE = 12.5 V; − − − − Ta = 25 °C; VCE = 12.5 V; - - - - Ta = 25 °C; VCE = 9.6 V f = 900 MHz; class-B operation; typical values.  Tmb = 25 °C; VCE = 12.5 V; − − − − Ta = 25 °C; VCE = 12.5 V; - - - - Ta = 25 °C; VCE = 9.6 V Fig.7 Load power as a function of source power. Fig.8 Power gain and efficiency as a function of load power. RUGGEDNESS The device is capable to withstand a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15.5 V at Ta = 25 °C. Device mounted on a printed-circuit board (see Fig.6). February 1996 7 Philips Semiconductors Product specification UHF power transistor BLV90 handbook, halfpage 8 MDA396 handbook, halfpage 25 MDA397 Zi (Ω) 6 ri ZL (Ω) 23 XL 4 21 RL 2 xi 0 19 17 −2 800 840 880 920 960 1000 f (MHz) 15 800 840 880 920 960 1000 f (MHz) VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz; Tmb = 25 °C; class-B operation; typical values. VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz; Tmb = 25 °C; class-B operation; typical values. Fig.9 Input impedance (series components). Fig.10 Load impedance (series components). handbook, halfpage 12 MDA563 Gp (dB) 8 4 0 800 850 900 950 f (MHz) 1000 VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz; Tmb = 25 °C; class-B operation; typical values. Fig.11 Power gain as a function of frequency. February 1996 8 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE Studless ceramic package; 4 leads BLV90 SOT172D D A Q c D1 H b 4 b1 H 1 3 2 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 3.71 2.89 0.146 0.114 b 3.31 3.04 0.13 0.12 b1 0.89 0.63 c 0.16 0.10 D 5.20 4.95 D1 5.33 5.08 H 26.17 24.63 1.03 0.97 Q 1.15 0.88 0.045 0.035 0.035 0.006 0.025 0.004 0.205 0.210 0.195 0.200 OUTLINE VERSION SOT172D REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28 February 1996 9 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLV90 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 10