BZA856A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD127 BZA800A-series Quadruple ESD transient voltage suppressor Preliminary specification 2000 Apr 18 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor FEATURES • ESD rating >8 kV, according to IEC1000-4-2 • SOT353 (SC-88A) surface mount package • Common anode configuration APPLICATIONS • Computers and peripherals • Audio and video equipment • Communication systems • Medical equipment. DESCRIPTION handbook, halfpage BZA800A-series PINNING PIN 1 2 3 4 5 cathode 1 common anode cathode 2 cathode 3 cathode 4 DESCRIPTION 3 2 1 1 c2 b2 3 Monolithic transient voltage suppressor diode in a five lead SOT353 (SC-88A) package for 4-bit wide ESD transient suppression. MARKING TYPE NUMBER BZA856A BZA862A BZA868A BZA820A MARKING CODE Z1 Z2 Z3 Z4 c1/e2 2 4 5 b1 e1 4 Top view 5 MAM212 Fig.1 Simplified outline SOT353 (SC-88A) 2000 Apr 18 2 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode IZ IF IFSM Ptot PZSM working current continuous forward current total power dissipation non repetitive peak reverse power dissipation BZA856A, BZA862A, BZA868A BZA820A Tstg Tj Notes 1. DC working current limited by P tot max. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS all diodes loaded storage temperature junction temperature Ta = 25 °C Ta = 25 °C Ta = 25 °C square pulse; tp = 1 ms; see Fig.3 − − − − − − PARAMETER CONDITIONS BZA800A-series MIN. MAX. UNIT note 1 200 3.75 335 mA mA A mW non-repetitive peak forward current tp = 1 ms; square pulse 24 17 +150 150 W W °C °C −65 − VALUE 370 UNIT K/W ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZA856A BZA862A BZA868A BZA820A Tj = 25 °C unless otherwise specified TYPE WORKING VOLTAGE VZ (V) at IZ = 1 mA MIN. BZA856A BZA862A BZA868A BZA820A 5.32 5.89 6.46 19 TYP. 5.6 6.2 6.8 20 MAX. 5.88 6.51 7.14 21 DIFFERENTIAL RESISTANCE rdif (Ω) at IZ = 1 mA MAX. 400 300 200 125 TEMP. COEFF. SZ (mV/K) at IZ = 1 mA TYP. −0.2 1.8 3 16 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 240 200 180 50 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 1 ms; Tamb = 25 °C MAX. 3.2 2.9 2.6 0.6 VR = 3 V VR = 4 V VR = 4.3 V VR = 15 V 2000 700 200 100 nA nA nA nA IF = 200 mA CONDITIONS MAX. 1.3 UNIT V 2000 Apr 18 3 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series 10 IZSM (A) 100 BZA856A, BZA862A, BZA868A BZA856A BZA862A BZA868A PZSM (W) BZA820A BZA820A 1 10 0.1 0.01 0.1 1 tp (ms) 10 1 0.01 0.1 1 tp (ms) 10 PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time. Fig.3 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). 200 Cd (pF) 160 120 BZA856A 80 BZA862A BZA868A 40 BZA820A 0 0 5 10 VR (V) 15 Tj = 25 °C; f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2000 Apr 18 4 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series ESD Tester RZ 450 ohm RG 223/U 50 ohm Coax 10X Attenuator note 1 Digitizing Oscilloscope CZ 50 ohm IEC 1000-4-2 network C Z = 150 pF; R Z = 330 Ω Note 1: attenuator is only used for open socket high voltage measurements 1/4 BZA800A Vertical Scale = 100 V/Div Horizontal Scale = 50 ns/Div B ZA 8 20A V ertica l S cale =10 V /Div H orizontal Sc ale = 50 ns/D iv G ND -4 B ZA 8 68A G ND -3 B ZA 8 62A G ND -2 B ZA 8 56A G ND -1 GND unclamped +1 kV ESD voltage waveform (IEC 1000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 1000-4-2 network) GND GN D Vertical Scale =10 V /D iv Vertical Scale =10 V /D iv Horizontal Scale = 50 ns/D iv Horizontal Scale = 50 ns/D iv Vertical Scale = 100 V/Div Horizontal Scale = 50 ns/Div unclamped − 1 kV ESD voltage waveform (IEC 1000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 1000-4-2 network) Fig.5 ESD clamping test set-up and waveforms. 2000 Apr 18 5 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor APPLICATION INFORMATION Typical common anode application BZA800A-series A quadruple transient suppressor in a SOT353 package makes it possible to protect four separate lines using only one package. Two simplified examples are shown in Figs 6 and 7. KEYBOARD TERMINAL PRINTER ETC. I/O A B C D FUNCTIONAL DECODER GND BZA800A Fig.6 Computer interface protection. Fig.7 Microprocessor protection. 2000 Apr 18 6 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA800A is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element close to the input terminals or connectors. 2. Keep parallel signal paths to a minimum. 3. Avoid running protection conductors in parallel with unprotected conductors. 4. Minimize all printed-circuit board loop areas including power and ground loops. 5. Minimize the length of the transient return path to ground. 6. Avoid using shared transient return paths to a common ground point. BZA800A-series 2000 Apr 18 7 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor PACKAGE OUTLINE BZA800A-series Plastic surface mounted package; 5 leads SOT353 D B E A X y HE vMA 5 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E (2) 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT353 REFERENCES IEC JEDEC EIAJ SC-88A EUROPEAN PROJECTION ISSUE DATE 97-02-28 2000 Apr 18 8 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) BZA800A-series This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. 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