PBSS5320D

DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product specification 2002 Jun 12 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SOT457 (SC-74) plastic package. MARKING TYPE NUMBER PBSS5320D 52 MARKING CODE 6 5 4 PBSS5320D QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −20 −3 −5 133 UNIT V A A mΩ 1, 2, 5, 6 3 4 1 Top view 2 3 MAM466 Fig.1 Simplified outline (SOT457; SC-74) and symbol. 2002 Jun 12 2 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 CONDITIONS open emitter open base open collector − − − − − − − − −65 − −65 MIN. PBSS5320D MAX. −20 −20 −5 −3 −5 −500 600 750 +150 150 +150 V V V A A UNIT mA mW mW °C °C °C 1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 CONDITIONS VALUE 208 160 UNIT K/W K/W Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2. 2002 Jun 12 3 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS − − − 200 200 200 150 − − − − − − − − −1.2 − 100 VCB = −20 V; IE = 0; Tj = 150 °C emitter-base cut-off current DC current gain VEB = −5 V; IC = 0 VCE = −2 V; IC = −100 mA VCE = −2 V; IC = −500 mA VCE = −2 V; IC = −1000 mA; note 1 VCE = −2 V; IC = −2000 mA; note 1 VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −5 mA IC = −500 mA; IB = −50 mA IC = −1 A; IB = −50 mA IC = −2 A; IB = −20 mA; note 1 IC = −2 A; IB = −200 mA; note 1 IC = −3 A; IB = −300 mA; note 1 RCEsat VBEsat VBEon Cc FT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage collector capacitance transition frequency IC = −3 A; IB = −300 mA; note 1 IC = −2 A; IB = −200 mA; note 1 VCE = −2 V; IC = −1 A; note 1 VCB = −10 V; IE = Ie = 0; f = 1 MHz IC = −200 mA; VCE = −10 V; f = 100 MHz MIN. − − − − − − − − − − − − − 85 − − − − MIN. PBSS5320D MAX. −100 −50 −100 − − − − −130 −80 −160 −400 −250 −400 133 −1.2 − 50 − UNIT nA µA nA collector-base cut-off current VCB = −20 V; IE = 0 mV mV mV mV mV mV mΩ V V pF MHz 2002 Jun 12 4 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads PBSS5320D SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 2002 Jun 12 5 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS PBSS5320D This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Jun 12 6 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor NOTES PBSS5320D 2002 Jun 12 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Jun 12 Document order number: 9397 750 09759