PBSS5320T,215

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET PBSS5320T 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan 15 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat SYMBOL • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. PARAMETER MAX. UNIT VCEO collector-emitter voltage −20 V IC collector current (DC) −2 A ICRP repetitive peak collector current −3 A RCEsat equivalent on-resistance 105 mΩ APPLICATIONS • Power management applications PINNING • Low and medium power DC/DC convertors PIN • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION 1 base 2 emitter 3 collector DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. handbook, halfpage 3 3 MARKING 1 MARKING CODE(1) TYPE NUMBER PBSS5320T 2 1 ZH∗ Note Top view 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. Fig.1 2 MAM256 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5320T 2004 Jan 15 − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −20 V VCEO collector-emitter voltage open base − −20 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −2 A ICRP repetitive peak collector current note 1 − −3 A ICM peak collector current single peak − −5 A IB base current (DC) Ptot total power dissipation − −0.5 A Tamb ≤ 25 °C; note 2 − 300 mW Tamb ≤ 25 °C; note 3 − 480 mW Tamb ≤ 25 °C; note 4 − 540 mW Tamb ≤ 25 °C; notes 1 and 2 − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. 2. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint. 3. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 6 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W in free air; note 3 230 K/W in free air; notes 1 and 4 104 K/W Notes 1. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 6 cm2. 4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. 2004 Jan 15 3 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector-base cut-off current VCB = −20 V; IE = 0 MIN. TYP. MAX. UNIT − − −100 nA VCB = −20 V; IE = 0; Tj = 150 °C − − −50 μA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −2 V; IC = −100 mA 220 − − VCE = −2 V; IC = −500 mA 220 − − VCE = −2 V; IC = −1 A; note 1 200 − − VCE = −2 V; IC = −2 A; note 1 150 − − VCE = −2 V; IC = −3 A; note 1 100 − − IC = −500 mA; IB = −50 mA − − −70 mV IC = −1 A; IB = −50 mA − − −130 mV IC = −2 A; IB = −100 mA; note 1 − − −230 mV IC = −2 A; IB = −200 mA; note 1 − − −210 mV IC = −3 A; IB = −300 mA; note 1 − − −300 mV VCEsat collector-emitter saturation voltage RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − 75 105 mΩ VBEsat base-emitter saturation voltage IC = −2 A; IB = −100 mA; note 1 − − −1.1 V IC = −3 A; IB = −300 mA; note 1 − − −1.2 V VBE(on) base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1 −1.2 − − V fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 50 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Jan 15 4 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320T MLD876 1000 MLD877 −1200 handbook, halfpage handbook, halfpage hFE VBE (mV) 800 (1) (1) −800 (2) 600 (2) 400 (3) −400 (3) 200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD878 −1400 −10 −102 Base-emitter voltage as a function of collector current; typical values. MLD879 −1400 handbook, halfpage −103 −104 IC (mA) handbook, halfpage VBEsat VBEsat (mV) (mV) −1000 −1000 (1) (1) (2) (2) (3) −600 −200 −10−1 −1 −10 −102 −600 (3) −200 −10−1 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. −1 (3) Tamb = 150 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 15 5 −10 −102 −103 −104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320T MLD880 −103 handbook, halfpage MLD881 −103 handbook, halfpage VCEsat VCEsat (mV) (mV) −102 −102 (1) (1) (2) −10 (2) −1 −10−1 −1 −10 −102 (3) −10 (3) −1 −10−1 −103 −104 IC (mA) −1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. MLD882 −103 handbook, halfpage −10 −102 Collector-emitter saturation voltage as a function of collector current; typical values. MLD883 −103 handbook, halfpage VCEsat VCEsat (mV) (mV) −103 −104 IC (mA) −102 (1) (2) −102 (3) −10 (1) (3) −1 −10−1 −1 −10 −102 −10 −10−1 −103 −104 IC (mA) IC/IB = 50. (1) Tamb = 150 °C. (2) Tamb = 25 °C. −1 (3) Tamb = −55 °C. IC/IB = 100. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 15 6 −10 (2) −102 −103 −104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320T MLD884 102 handbook, halfpage RCEsat (Ω) 10 1 (1) 10−1 (2) (3) 10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Equivalent on-resistance as a function of collector current; typical values. 2004 Jan 15 7 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 15 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 8 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 15 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 Jan 15 Document order number: 9397 750 12441