PBSS5480X

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 8 2004 Nov 08 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current IC: 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers (e.g. fans and motors) • Strobe flash units for digital still cameras and mobile phones • Inverter applications (e.g. TFT displays) • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers. DESCRIPTION PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4480X. MARKING TYPE NUMBER PBSS5480X Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. MARKING CODE(1) *1Z 3 2 1 PBSS5480X QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −80 −4 −10 75 UNIT V A A mΩ 2 3 1 sym079 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5480X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Nov 08 2 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM ICRP IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current repetitive peak collector current base current (DC) peak base current total power dissipation tp ≤ 1 ms Tamb ≤ 25 °C notes 2 and 3 note 3 note 4 note 1 note 5 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature − − − − − −65 − −65 CONDITIONS open emitter open base open collector note 1 tp ≤ 1 ms or limited by Tj(max) tp ≤ 10 ms; δ ≤ 0.1 − − − − − − − − MIN. PBSS5480X MAX. −80 −80 −5 −4 −10 −6 −1 −2 2.5 0.55 1 1.4 1.6 +150 150 +150 V V V A A A A A W W W W W UNIT °C °C °C 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 2. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.1. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated. 2004 Nov 08 3 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X 1600 Ptot (mW) 1200 (2) (1) 001aaa229 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. 2004 Nov 08 4 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air notes 1 and 2 note 2 note 3 note 4 note 5 Rth(j-s) Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint. thermal resistance from junction to soldering point PBSS5480X VALUE 50 225 125 90 80 16 UNIT K/W K/W K/W K/W K/W K/W 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 006aaa232 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 5 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X 103 Zth (K/W) (1) 006aaa233 102 (3) (5) (6) (2) (4) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) (8) (9) 006aaa234 10 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 6 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = −80 V; IE = 0 A VCB = −80 V; IE = 0 A; Tj = 150 °C VCE = −60 V; VBE = 0 V VEB = −5 V; IC = 0 A VCE = −2 V; IC = −0.5 A VCE = −2 V; IC = −1 A; note 1 VCE = −2 V; IC = −2 A; note 1 VCE = −2 V; IC = −4 A; note 1 VCEsat collector-emitter saturation voltage IC = −0.5 A; IB = −50 mA IC = −1 A; IB = −50 mA IC = −2 A; IB = −40 mA IC = −4 A; IB = −200 mA; note 1 IC = −5 A; IB = −500 mA; note 1 RCEsat VBEsat equivalent on-resistance base-emitter saturation voltage IC = −5 A; IB = −500 mA; note 1 IC = −0.5 A; IB = −50 mA IC = −1 A; IB = −50 mA IC = −1 A; IB = −100 mA; note 1 IC = −4 A; IB = −400 mA; note 1 VBEon fT Cc Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. base-emitter turn-on voltage transition frequency collector capacitance VCE = −2 V; IC = −2 A IC = −0.1 A; VCE = −10 V; f = 100 MHz VCB = −10 V; IE = ie = 0 A; f = 1 MHz MIN. − − − − 200 180 150 80 − − − − − − − − − − − 100 − PBSS5480X TYP. − − − − 300 280 240 150 −35 −70 −170 −220 −250 50 −770 −810 −810 −930 −760 125 60 MAX. −100 −50 −100 −100 − − − − −55 −105 −250 −340 −380 75 −850 −900 −900 −850 − 90 UNIT nA µA nA nA mV mV mV mV mV mΩ mV mV mV mV MHz pF −1000 mV 2004 Nov 08 7 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X −10 IC (A) −8 (4) (3) (2) 001aaa753 (1) −1.2 VBE (V) −0.8 (1) 001aaa754 (5) (6) (7) (8) (9) (10) −6 (2) −4 −0.4 −2 (3) 0 0 −0.4 −0.8 −1.2 −1.6 −2 VCE (V) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) (1) (2) (3) (4) IB = −300 mA. IB = −270 mA. IB = −240 mA. IB = −210 mA. (5) IB = −180 mA. (6) IB = −150 mA. (7) IB = −120 mA. (8) IB = −90 mA. (9) IB = −60 mA. (10) IB = −30 mA. VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.6 Collector current as a function of collector-emitter voltage; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. 600 hFE (1) 001aaa755 103 RCEsat (Ω) 102 001aaa756 400 10 (2) 1 200 (3) 10−1 (2) (1) (3) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 DC current gain as a function of collector current; typical values. Fig.9 Equivalent on-resistance as a function of collector current; typical values. 2004 Nov 08 8 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X −1 001aaa757 −1 VCEsat (V) −10−1 (1) 001aaa758 VCEsat (V) −10−1 −10−2 (1) (2) (3) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values. −1.2 VBEsat (V) (1) 001aaa759 −1.2 VBEon (V) −0.8 001aaa760 −0.8 (2) (3) −0.4 −0.4 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Tamb = 25 °C; VCE = −2 V. Fig.12 Base-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter turn-on voltage as a function of collector current; typical values. 2004 Nov 08 9 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor Reference mounting conditions PBSS5480X 32 mm handbook, halfpage 32 mm 10 mm 40 mm 2.5 mm 1 mm 3 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa234 40 mm 10 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm MLE322 Fig.14 FR4, standard footprint. Fig.15 FR4, mounting pad for collector 1 cm2. 32 mm 30 mm 40 mm 2.5 mm 1 mm 0.5 mm 20 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Nov 08 10 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads PBSS5480X SOT89 D B A bp3 E HE Lp 1 2 bp2 wM bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 2004 Nov 08 11 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS5480X This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Nov 08 12 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp13 Date of release: 2004 Nov 08 Document order number: 9397 750 13891