CM100DY-24A

CM100DY-24A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ A-Series Module 100 Amperes /1200 Volts A F E F E G2 E2 G J H G B N C2E1 E2 C1 E1 G1 K L (2 PLACES) P K D K M NUTS (3 PLACES) Q P Q P T THICK U WIDTH S C V LABEL R G2 E2 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100DY-24A is a 1200V (VCES), 100 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 24 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 3.70 1.89 3.15±0.01 0.67 0.91 0.16 0.71 0.51 0.47 Millimeters 94.0 48.0 80.0±0.25 17.0 23.0 4.0 18.0 13.0 12.0 Dimensions L M N P Q R S T U V Inches 0.26 Dia. M5 Metric 0.79 0.63 0.28 0.83 0.30 0.02 0.110 0.16 Millimeters Dia. 6.5 M5 20.0 16.0 7.0 21.2 7.5 0.5 2.8 4.0 1.14+0.004/-0.02 29.0+0.1/-0.5 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DY-24A Dual IGBTMOD™ A-Series Module 100 Amperes /1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E Short) Gate-Emitter Voltage (C-E Short) Collector Current (DC, TC = 84°C*) Peak Collector Current Emitter Current*** (TC = 25°C) Peak Emitter Current*** Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM PC — — — VISO CM100DY-24A –40 to 150 –40 to 125 1200 ±20 100 200** 100 200** 672 30 40 310 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Total Gate Charge Emitter-Collector Voltage** Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25°C IC = 100A, VGE = 15V, Tj = 125°C VCC = 600V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. — — 6.0 — — — — Typ. — — 7.0 2.1 2.4 500 — Max. 1.0 0.5 8.0 3.0 — — 3.8 Units mA µA Volts Volts Volts nC Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1Ω, Inductive Load Switching Operation, IE = 100A VCE = 10V, VGE = 0V Test Conditions Min. — — — — — — — — — Typ. — — — — — — — — 5.0 Max. 17.5 1.5 0.34 100 70 400 350 150 — Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time*** Diode Reverse Recovery Charge*** *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DY-24A Dual IGBTMOD™ A-Series Module 100 Amperes /1200 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Thermal Resistance, Junction to Case* Thermal Resistance, Junction to Case* Contact Thermal Resistance External Gate Resistance *TC, Tf measured point is just under the chips. Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) RG Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per 1/2 Module, Thermal Grease Applied Min. — — — 3.1 Typ. — — 0.022 — Max. 0.186 0.34 — 42 Units °C/W °C/W °C/W Ω OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 13 Tj = 25oC 12 4 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 25°C IC = 200A 150 3 8 6 4 2 0 IC = 40A 100 11 2 IC = 100A 50 10 1 9 0 0 2 4 6 8 10 0 0 50 100 150 200 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 VGE = 0V Cies SWITCHING TIME, (ns) 103 tf td(off) 101 102 td(on) tr 102 100 Coes Cres 101 10-1 Tj = 25°C Tj = 125°C 101 0 1 2 3 4 5 10-2 10-1 100 101 102 100 101 VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load 102 COLLECTOR CURRENT, IC, (AMPERES) 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DY-24A Dual IGBTMOD™ A-Series Module 100 Amperes /1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE VS. VGE IC = 100A VCC = 400V VCC = 600V SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 600V VGE = 15V RG = 3.1Ω Tj = 25°C Inductive Load 103 20 16 12 8 4 0 102 VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus 102 102 101 Irr trr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 ESW(on) ESW(off) 0 160 320 480 640 800 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 VCC = 600V VGE = 15V IC = 100A Tj = 125°C Inductive Load C Snubber at Bus 101 VCC = 600V VGE = 15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) ESW(on) ESW(off) 102 102 VCC = 600V VGE = 15V IC = 100A Tj = 125°C Inductive Load C Snubber at Bus 101 100 100 101 GATE RESISTANCE, RG, (Ω) 102 100 101 102 EMITTER CURRENT, IE, (AMPERES) 103 100 10-1 100 GATE RESISTANCE, RG, () 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 10-1 10-2 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.186°C/W (IGBT) Rth(j-c) = 0.34°C/W (FWDi) 10-1 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4