CM75DY-24H

CM75DY-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ H-Series Module 75 Amperes/1200 Volts A B C F F K E2 G2 Q - DIA. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R .110 TAB H L H P E G Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G2 E2 C2E1 E2 C1 E1 G1 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75DY-24H is a 1200V (VCES), 75 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 75 VCES Volts (x 50) 24 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.150± 0.01 1.57 1.34 1.22 Max. 0.90 0.85 0.79 0.71 Millimeters 94.0 80.0± 0.25 40.0 34.0 31.0 Max. 23.0 21.5 20.0 18.0 Dimensions K L M N P Q R S Inches 0.67 0.63 0.51 0.47 0.28 0.256 Dia. 0.16 M5 Metric Millimeters 17.0 16.0 13.0 12.0 7.0 Dia. 6.5 4.0 M5 257 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DY-24H Dual IGBTMOD™ H-Series Module 75 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd – – – VRMS CM75DY-24H –40 to 150 –40 to 125 1200 ± 20 75 150* 75 150* 600 17 26 190 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V IC = 75A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 75A, VGS = 15V IE = 75A, VGS = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.5 2.25 375 – Max. 1.0 0.5 7.5 3.4** – – 3.5 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 75A, diE/dt = –150A/µs IE = 75A, diE/dt = –150A/µs VCC = 600V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2Ω VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.56 Max. 15 5.3 3 150 350 250 350 250 – Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.21 0.47 0.075 Units °C/W °C/W °C/W 258 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DY-24H Dual IGBTMOD™ H-Series Module 75 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 COLLECTOR CURRENT, IC, (AMPERES) 150 125 100 75 50 25 0 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 15 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 12 125 100 75 50 25 0 VGE = 20V 11 4 3 10 9 7 8 2 1 0 0 25 50 75 100 125 150 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C Tj = 25°C IC = 150A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 102 101 Cies 6 IC = 75A 4 101 100 Coes 2 IC = 30A VGE = 0V f = 1MHz Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 tf REVERSE RECOVERY TIME, t rr, (ns) 103 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 IC = 75A 16 SWITCHING TIME, (ns) VCC = 400V VCC = 600V td(off) 12 102 102 t rr Irr 101 8 td(on) VCC = 600V VGE = ±15V RG = 4.2Ω Tj = 125°C 101 100 tr di/dt = -150A/µsec Tj = 25°C 4 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 100 200 300 400 500 600 GATE CHARGE, QG, (nC) 259 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DY-24H Dual IGBTMOD™ H-Series Module 75 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.21°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.47°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 260