CM75DY-34A

MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE CM75DY-34A ¡IC ..................................................................... 75A ¡VCES ......................................................... 1700V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 17 23 23 17 C2E1 E2 C1 E2 G2 4 G1 E1 12 2-φ6.5 MOUNTING HOLES 12 80±0.25 12 4 3-M5 NUTS 12.5 (SCREWING DEPTH) 20 (14) 48 13 18 4 TAB #110. t=0.5 16 7 16 7 16 7.5 C2E1 E2 C1 29 +1 –0.5 LABEL CIRCUIT DIAGRAM G1 E1 21.2 E2 G2 Feb. 2009 1 MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Conditions G-E Short C-E Short DC, TC = 111°C*1 Pulse Operation Pulse TC = 25°C*1 (Note 2) (Note 2) (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Ratings 1700 ±20 75 150 75 150 780 –40 ~ +150 –40 ~ +125 3500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A W °C °C Vrms N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 75A, VGE = 15V VCC = 1000V, IC = 75A VGE = ±15V RG = 6.4Ω, Inductive load IE = 75A IE = 75A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound applied (1/2 module)*1,*2 Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. — 5.5 — — — — — — — — — — — — — — — — — 6.4 Limits Typ. — 7.0 — 2.2 2.45 — — — 500 — — — — — 7.5 — — — 0.022 — Max. 1 8.5 2.0 2.8 — 18.5 2.1 0.4 — 200 150 550 350 300 — 3.0 0.16 0.29 — 64 Unit mA V µA V nF nC ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 150 Tj = 25°C VGE = 20V 100 11 150 TRANSFER CHARACTERISTICS (TYPICAL) 12 VCE = 10V COLLECTOR CURRENT IC (A) 13 COLLECTOR CURRENT IC (A) 15 100 50 10 8 9 8 10 50 0 0 2 4 6 0 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 10 Tj = 25°C 8 3 6 IC = 150A IC = 75A 2 4 1 Tj = 25°C Tj = 125°C 0 50 100 150 2 IC = 30A 0 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 3 2 CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) Tj = 25°C Tj = 125°C 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 Cies 101 102 7 5 3 2 100 Coes Cres 101 7 5 3 2 10–1 100 0.5 1 1.5 2 2.5 3 3.5 4 VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE SWITCHING TIME td(on), tr, td(off), tf (ns) SWITCHING TIME td(on), tr, td(off), tf (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT (TYPICAL) 103 tf 7 td(off) 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE (TYPICAL) 103 7 5 3 2 tf td(off) 102 td(on) 102 7 5 3 2 td(on) tr Conditions: VCC = 1000V VGE = ±15V IC = 75A Tj = 125°C Inductive load 2 3 5 7 102 tr Conditions: 101 VCC = 1000V 7 5 VGE = ±15V 3 RG = 6.4Ω 2 Tj = 125°C Inductive load 100 0 10 23 5 7 101 2 3 5 7 102 101 0 10 2 3 5 7 101 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) 102 SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) Conditions: VCC = 1000V 5 VGE = ±15V 3 RG = 6.4Ω Tj = 125°C 2 Inductive load 7 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 103 Conditions: VCC = 1000V VGE = ±15V 3 IC = 75A Tj = 125°C 2 Inductive load 7 5 101 7 5 3 2 102 7 5 3 2 Err Eoff Eon Err Eoff Eon 2 3 5 7 101 2 3 5 7 102 100 0 10 2 3 5 7 101 2 3 5 7 102 101 0 10 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: VCC = 1000V 5 VGE = ±15V 3 RG = 6.4Ω Tj = 25°C 2 Inductive load 102 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 100 7 5 3 2 10–1 7 5 3 2 Single Pulse Tc= 25°C Tc measured point is just under the chips Irr trr 10–2 7 5 IGBT part: 3 Per unit base = Rth(j–c) = 0.16K/W 2 FWDi part: 101 0 10 2 3 5 7 101 2 3 5 7 102 Per unit base = Rth(j–c) = 0.29K/ W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) EMITTER CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 75A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 200 400 600 800 GATE CHARGE QG (nC) Feb. 2009 5