CM200DY-34A

MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC ................................................................... 200A ¡VCES ......................................................... 1700V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 （7.5） （7） 93±0.25 （7.5） 3-M6 NUTS （24） G2 （13.7） （5.2）（8.5） 4 48 ±0.25 6 62 E2 E1 C2E1 E2 C1 G1 （7） 21.5 25 25 24 4-φ6.5 MOUNTING HOLES 18 14 7 18 14 7 18 14 2.8 7.5 8.5 4 TAB #110 t=0.5 E2 G2 C2E1 LABEL 22.2 E2 C1 G1 E1 CIRCUIT DIAGRAM 30 +1.0 –0.5 17.5 6 （20） 15 30 Feb. 2009 1 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Conditions G-E Short C-E Short DC, TC = 109°C*1 Pulse Operation Pulse TC = 25°C*1 (Note 2) (Note 2) (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 1700 ±20 200 400 200 400 1980 –40 ~ +150 –40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W °C °C Vrms N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 200A, VGE = 15V VCC = 1000V, IC = 200A VGE = ±15V RG = 2.4Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound applied (1/2 module)*1,*2 Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. — 5.5 — — — — — — — — — — — — — — — — — 2.4 Limits Typ. — 7.0 — 2.2 2.45 — — — 1330 — — — — — 20 — — — 0.02 — Max. 1 8.5 2.0 2.8 — 49.4 5.6 1.06 — 550 190 750 350 450 — 3.0 0.063 0.11 — 24 Unit mA V µA V nF nC ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 400 Tj = 25°C VGE = 20V 400 TRANSFER CHARACTERISTICS (TYPICAL) 12 VCE = 10V COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 350 300 250 200 150 100 50 0 0 15 13 350 300 250 200 150 100 50 0 0 4 8 12 Tj = 25°C Tj = 125°C 16 20 11 10 8 2 4 6 8 9 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 10 Tj = 25°C 8 3 6 IC = 400A IC = 200A 2 4 1 Tj = 25°C Tj = 125°C 0 100 200 300 400 2 IC = 80A 0 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 5 3 2 Tj = 25°C Tj = 125°C 7 5 3 2 Cies 101 7 5 3 2 102 7 5 3 2 100 7 5 3 2 Coes Cres 101 0.5 1 1.5 2 2.5 3 3.5 4 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE SWITCHING TIME td(on), tr, td(off), tf (ns) SWITCHING TIME td(on), tr, td(off), tf (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT (TYPICAL) 103 td(off) 7 tf 5 td(on) 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 td(off) td(on) tf tr Conditions: VCC = 1000V VGE = ±15V IC = 200A Tj = 125°C Inductive load 3 5 7 101 2 3 5 7 102 tr 101 1 10 Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 101 0 10 2 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) 103 7 5 3 2 SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω 102 Tj = 125°C 7 Inductive load 5 3 2 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 103 7 VCC = 1000V 5 Conditions: VGE = ±15V 3 IC = 200A 2 Eon Eoff Err Tj = 125°C Inductive load Eon 102 7 5 3 2 Eoff Err 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 101 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 100 7 5 3 2 trr Irr Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 10–1 7 5 3 2 102 7 5 3 2 Single Pulse Tc= 25°C Tc measured point is just under the chips 10–2 7 5 IGBT part: 3 Per unit base = Rth(j–c) = 0.063K/W 2 FWDi part: 101 1 10 Per unit base = Rth(j–c) = 0.11K/ W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) EMITTER CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 500 1000 1500 2000 GATE CHARGE QG (nC) Feb. 2009 5