CM400DY-34A

MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE CM400DY-34A ¡IC ................................................................... 400A ¡VCES ......................................................... 1700V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 10 4 4-φ6.5 (MOUNTING HOLES) 16.5 10 10 43.8 13.8 11.5 4-M4 NUTS 10 G2 110±0.2 36 9 E2 9 20 14.5 3-M8 NUTS 28.5 110±0.2 10 E1 G1 9 20.5 14.5 16.5 （15） M L 16.5 C A B C L 16 19 10 M 7 7 3.5 35 –0.5 C2E1 24.5 –0.5 +1 E2 C1 G1 E1 +1 9.1 CIRCUIT DIAGRAM Jun. 2007 E2 G2 A B 16.5 13.5 28.5 （26） （26） （26） 9 20 LABEL C2 E1 130 24 C1 20 26 E2 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Tj = 25°C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 107°C*1 Pulse Operation Pulse TC = 25°C*1 (Note 2) (Note 2) (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Main terminal to base plate, AC 1 min. Main terminal M8 Mounting holes M6 G(E) terminal M4 Typical value Ratings 1700 ±20 400 800 400 800 3780 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A W °C °C V N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V ±VGE = VGES, VCE = 0V Tj = 25°C IC = 400A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1000V, IC = 400A, VGE = 15V VCC = 1000V, IC = 400A VGE1 = VGE2 = 15V RG = 1.2Ω, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to fin, Thermal compound applied (1/2 module)*1,*2 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. — 5.5 — — — — — — — — — — — — — — — — — 1.2 Limits Typ. — 7.0 — 2.2 2.45 — — — 2670 — — — — — 40 — — — 0.019 — Max. 1 8.5 2.0 2.8 — 98.8 11.2 2.12 — 950 300 1000 350 450 — 3.0 0.033 0.055 — 12 Unit mA V µA V nF nC ns µC V °C/W Ω *1 : Tc, Tf measured point is just under the chips. *2 : Typical value is measured by using Shin-Etsu Chemical Co.,Ltd “G-746”. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Jun. 2007 2 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS 800 Tj = 25°C COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS 800 12 700 600 500 400 300 200 100 0 0 4 8 12 Tj = 25°C Tj = 125°C 16 20 VCE = 10V 700 600 500 400 300 200 100 0 0 VGE = 20V 15 13 11 10 8 2 4 6 8 9 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS 10 Tj = 25°C 5 VGE = 15V 4 8 3 6 IC = 800A IC = 400A 2 4 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 2 IC = 160A 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS 104 3 2 CAPACITANCE–VCE CHARACTERISTICS 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 EMITTER CURRENT IE (A) Tj = 25°C Tj = 125°C 102 Cies 103 7 5 3 2 101 Coes Cres 102 7 5 3 2 100 101 0.5 1 1.5 2 2.5 3 3.5 4 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Jun. 2007 3 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE SWITCHING TIME td(on), tr, td(off), tf (ns) SWITCHING TIME td(on), tr, td(off), tf (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT 104 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE 104 7 5 3 2 103 7 5 3 2 td(off) td(on) tf td(on) td(off) tr tf Conditions: VCC = 1000V VGE = ±15V IC = 400A Tj = 125°C Inductive load 2 3 5 7 101 2 3 5 7 102 103 7 5 3 2 102 7 5 3 2 tr 101 1 10 Conditions: VCC = 1000V VGE = ±15V RG = 1.2Ω Tj = 125°C Inductive load 5 7 102 2 3 5 7 103 102 7 5 3 2 2 3 101 0 10 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) SWITCHING LOSS vs. COLLECTOR CURRENT SWITCHING LOSS vs. GATE RESISTANCE Err SWITCHING LOSS Eon, Eoff (mJ/pulse) SWITCHING LOSS Eon, Eoff (mJ/pulse) 103 7 5 3 2 102 103 7 5 3 2 102 Eon 5 3 2 SWITCHING LOSS Err (mJ/pulse) 5 3 Eon Eoff Conditions: VCC = 1000V VGE = ±15V RG = 1.2Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 2 Eoff 102 7 5 3 2 102 7 5 3 2 101 7 5 3 2 101 Conditions: VCC = 1000V VGE = ±15V IC = 400A Tj = 125°C Inductive load 2 3 5 7 101 2 3 7 5 3 2 101 1 10 5 7 103 100 101 0 10 5 7 102 100 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE 103 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 100 7 5 3 2 102 7 5 3 2 trr Irr Conditions: VCC = 1000V VGE = ±15V RG = 1.2Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 10–1 7 5 3 2 Single Pulse Tc= 25°C Tc measured point is just under the chips 10–2 7 5 IGBT part: 3 Per unit base = Rth(j–c) = 0.033°C/W 2 FWDi part: 101 1 10 Per unit base = Rth(j–c) = 0.055°C/ W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) EMITTER CURRENT IC (A) Jun. 2007 4 SWITCHING LOSS Err (mJ/pulse) 7 Err 7 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS 20 GATE-EMITTER VOLTAGE VGE (V) IC = 400A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 1000 2000 3000 4000 GATE CHARGE QG (nC) Jun. 2007 5