CM400DY-24A

MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE CM400DY-24A ¡IC ................................................................... 400A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 14 110 93±0.25 14 14 4 E2 G2 80 62±0.25 6 G1 E1 C2E1 E2 C1 3-M6 NUTS 25 25 21.5 4-φ6.5 MOUNTING HOLES 6 30 (20.5) 15 11 SCREWING DEPTH 18 7 18 7 18 TAB #110. t=0.5 8.5 E2 G2 +1.0 –0.5 C2E1 E2 C1 G1 E1 29 LABEL 21.2 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Conditions G-E Short C-E Short DC, TC = 85°C*1 Pulse Pulse TC = 25°C*1 (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 1200 ±20 400 800 400 800 2710 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A W °C °C Vrms N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 400A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE = ±15V RG = 0.78Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*2 Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. — 6 — — — — — — — — — — — — — — — — — 0.78 Limits Typ. — 7 — 2.1 2.4 — — — 2000 — — — — — 16 — — — 0.02 — Max. 1 8 0.5 3.0 — 70 6 1.4 — 550 180 600 350 250 — 3.8 0.046 0.085 — 10 Unit mA V µA V nF nC ns ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR EMITTER SATURATION VOLTAGE VCE (sat) (V) 800 700 600 500 400 VGE = 20V 15 13 Tj = 25°C 12 4 VGE = 15V 3 2 11 300 200 100 0 0 2 4 6 8 10 9 10 1 Tj = 25°C Tj = 125°C 0 0 100 200 300 400 500 600 700 800 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25°C EMITTER CURRENT IE (A) 8 5 3 2 6 IC = 800A IC = 400A 2 IC = 160A 0 6 8 10 12 14 16 18 20 102 7 5 3 2 4 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies SWITCHING TIME (ns) 7 5 3 2 td(off) tf td(on) 101 7 5 3 2 Coes 102 7 5 3 2 100 7 5 3 2 tr Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive load 5 7 102 2 3 5 7 103 2 3 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c’) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC = 25°C 3 Under the chip 2 Irr trr Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 25°C Inductive load 23 5 7 103 10–1 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 101 1 10 2 3 5 7 102 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.046K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.085K/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 102 7 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 103 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 5 3 2 101 7 5 3 2 Esw(off) Esw(on) 100 1 10 Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive load C snubber at bus 5 7 102 2 3 5 7 103 Conditions: VCC = 600V VGE = ±15V 3 IC = 400A Tj = 125°C 2 Inductive load C snubber at bus 2 10 7 5 7 5 Esw(on) Esw(off) 3 2 2 3 101 –1 10 2 3 5 7 100 2 3 5 7 101 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) 102 7 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) 5 3 2 5 3 2 Err Err 101 7 5 3 2 100 1 10 2 3 Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive load C snubber at bus 5 7 102 23 5 7 103 101 7 5 3 2 Conditions: VCC = 600V VGE = ±15V IE = 400A Tj = 125°C Inductive load C snubber at bus 2 3 5 7 100 2 3 5 7 101 100 –1 10 EMITTER CURRENT IE (A) GATE RESISTANCE RG (Ω) Feb. 2009 4 MITSUBISHI IGBT MODULES CM400DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 400A 16 VCC = 400V VCC = 600V 12 8 4 0 0 500 1000 1500 2000 2500 3000 GATE CHARGE QG (nC) Feb. 2009 5