CM150DY-24NF

CM150DY-24NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ NF-Series Module 150 Amperes/1200 Volts TC MEASURED POINT (BASEPLATE) A F E F E G2 E2 G J B N C2E1 E2 C1 E1 G1 H G K L (2 PLACES) K D K M NUTS (3 PLACES) P Q P Q P T THICK U WIDTH S C V LABEL R G2 E2 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150DY-24NF is a 1200V (VCES), 150 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 150 VCES Volts (x 50) 24 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 3.70 1.89 3.15± 0.01 0.67 0.91 0.16 0.71 0.51 0.47 Millimeters 94.0 48.0 80.0± 0.25 17.0 23.0 4.0 18.0 13.0 12.0 Dimensions L M N P Q R S T U V Inches 0.26 Dia. M5 Metric 0.79 0.63 0.28 0.83 0.30 0.02 0.110 0.16 Millimeters Dia. 6.5 M5 20.0 16.0 7.0 21.2 7.5 0.5 2.8 4.0 1.14+0.04/-0.02 29.0+1.0/-0.5 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DY-24NF Dual IGBTMOD™ NF-Series Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E Short) Gate-Emitter Voltage (C-E Short) Collector Current*** (DC, TC' = 110°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM PC — — — VISO CM150DY-24NF –40 to 150 –40 to 125 1200 ±20 150 300* 150 300* 780 30 40 310 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V, Tj = 25°C IC = 150A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V Min. — — 6.0 — — — — Typ. — — 7.0 1.8 2.0 1000 — Max. 1.0 0.5 8.0 2.5 — — 3.2 Units mA µA Volts Volts Volts nC Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1Ω, Inductive Load Switching Operation, IE = 150A VCE = 10V, VGE = 0V Test Conditions Min. — — — — — — — — — Typ. — — — — — — — — 7.5 Max. 35 3 0.68 120 80 450 350 150 — Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time** Diode Reverse Recovery Charge** *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi) *** Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips 2 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DY-24NF Dual IGBTMOD™ NF-Series Module 150 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) RG Test Conditions Per IGBT 1/2 Module, TC Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, TC Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/2 Module, TC Reference Point Under Chips Contact Thermal Resistance External Gate Resistance Per 1/2 Module, Thermal Grease Applied — 2.1 0.07 — — 21 °C/W Ω — — 0.093 °C/W — — 0.25 °C/W Min. — Typ. — Max. 0.16 Units °C/W OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 300 250 200 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 13 12 Tj = 25oC 4 VGE = 15V Tj = 25°C Tj = 125°C 10 Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES) 3 8 6 4 2 IC = 300A 11 150 100 10 2 IC = 150A IC = 60A 1 50 9 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 50 0 100 150 200 250 300 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 Tj = 25°C Tj = 125°C Cies SWITCHING TIME, (ns) 103 tf td(off) 101 102 td(on) tr 102 Coes 100 Cres VGE = 0V 101 VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive Load 101 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DY-24NF Dual IGBTMOD™ NF-Series Module 150 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE VS. VGE SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive Load 103 20 IC = 150A 102 16 VCC = 400V VCC = 600V 12 8 4 VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive Load C Snubber at Bus 102 102 101 Irr trr 101 101 101 103 ESW(on) ESW(off) 102 EMITTER CURRENT, IE, (AMPERES) 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE, QG, (nC) 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth ¥ (NORMALIZED VALUE) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 102 100 10-3 10-2 10-1 100 101 10-1 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.16°C/W (IGBT) Rth(j-c) = 0.25°C/W (FWDi) 101 VCC = 600V VGE = ±15V IC = 150A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 10-2 10-2 100 100 101 GATE RESISTANCE, RG, (Ω) 102 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4