CM50TF-24H

CM50TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/1200 Volts X Z - M4 THD (7 TYP.) B uP E uP A C QX S QX N B vP E vP B wP E wP P B uN E uN P B vN E vN B wN E wN P G B E D G U V W N R K J N U T N W AA L M M AA L Y DIA. (4 TYP.) .110 TAB V F H AB P BuP P EuP BvP EvP BwP EwP Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50TF-24H is a 1200V (VCES), 50 Ampere Six-IGBT IGBTMOD™ Power Module. Type CM Current Rating Amperes 50 VCES Volts (x 50) 24 BuN EuN u N BvN EvN v BwN EwN w N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.02± 0.02 3.58± 0.02 3.15± 0.01 2.913± 0.01 1.69 Millimeters 102.0± 0.5 91.0± 0.5 80.0± 0.25 74.0± 0.25 43.0 Dimensions P Q R S T U V W X Y Z AA AB Inches 0.65 0.55 0.47 0.43 0.39 0.33 0.32 0.24 Rad. 0.24 0.22 Dia. M4 Metric 0.08 0.28 Millimeters 16.5 14.0 12.0 11.0 10.0 8.5 8.1 Rad. 6.0 6.0 Dia. 5.5 M4 2.0 7.0 1.18 +0.06/-0.02 30 +1.5/-0.5 1.18 1.16 1.06 0.96 0.87 0.79 0.67 30.0 29.5 27.0 24.5 22.0 20.0 17.0 335 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-24H Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M4 Mounting Screws Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd – – – VRMS CM50TF-24H –40 to 150 –40 to 125 1200 ± 20 50 100* 50 100* 400 13 17 540 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 5mA, VCE = 10V IC = 50A, VGE = 15V IC = 50A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 50A, VGS = 15V IE = 50A, VGS = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.5 2.25 250 – Max. 1.0 0.5 7.5 3.4** – – 3.4 Units mA mA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 50A, diE/dt = –100A/µs IE = 50A, diE/dt = –100A/µs VCC = 600V, IC = 50A, VGE1 = VGE2 = 15V, RG = 6.3Ω VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.37 Max. 10 3.5 2 80 200 150 350 250 – Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.31 0.70 0.033 Units °C/W °C/W °C/W 336 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-24H Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 100 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 15 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 12 80 VGE = 20V 11 80 4 60 10 60 3 40 40 2 20 7 9 8 20 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 20 40 60 80 100 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 102 Tj = 25°C Tj = 25°C IC = 100A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 101 6 Cies IC = 50A 101 4 100 Coes 2 IC = 20A VGE = 0V f = 1MHz Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 tf REVERSE RECOVERY TIME, t rr, (ns) 103 Irr 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 50A 16 SWITCHING TIME, (ns) td(off) VCC = 400V VCC = 600V 102 td(on) VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C 102 t rr 12 100 8 tr di/dt = -100A/µsec Tj = 25°C 4 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 100 200 300 400 GATE CHARGE, QG, (nC) 337 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-24H Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.31°C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.7°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 338