CM800DU-12H

CM800DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts A "R" (4 PLACES) E F G H G2 J E2 C2E1 E2 B E K E1 L M G1 C1 J "T" (4 PLACES) N "S" (3 PLACES) Q P D C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM800DU-12H is a 600V (VCES), 800 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 800 VCES Volts (x 50) 12 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 5.12 5.12 1.38 0.96 4.33 0.39 0.39 0.81 0.53 Millimeters 130.0 130.0 35.0 24.5 110.0 10.0 10.0 20.5 14.5 Dimensions K L M N P Q R S T Inches 1.57 1.42 1.72 0.54 0.45 5.51 0.26 Dia. M8 M4 Millimeters 40.0 36.0 43.8 13.8 11.5 140.0 6.5 Dia. M8 M4 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800DU-12H Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting G(E) Terminal, M4 Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – – CM800DU-12H -40 to 150 -40 to 125 600 ± 20 800 1600* 800 1600* 1500 95 40 15 1200 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts Viso 2500 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 80mA, VCE = 10V IC = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 800A, VGE = 15V VEC IE = 800A, VGE = 0V **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Min. – – 4.5 – – – – Typ. – – 6 2.55 2.75 1600 – Max. 2 0.5 7.5 3.15 – – 2.6 Units mA µA Volts Volts Volts nC Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr VCC = 300V, IC = 800A, VGE1 = VGE2 = 15V, RG = 3.1 , Resistive Load Switching Operation IE = 800A, diE/dt = -1600A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 1.92 Max. 70.4 38.4 10.4 400 2000 500 300 160 – Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Qrr IE = 800A, diE/dt = -1600A/µs **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.010 Max. 0.083 0.13 – Units °C/W °C/W °C/W 2 Contact Thermal Resistance Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800DU-12H Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1600 COLLECTOR CURRENT, IC, (AMPERES) 1600 VGE = 20V 20 COLLECTOR CURRENT, IC, (AMPERES) 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 14 13 1200 1200 4 3 2 1 12 800 11 800 10 400 9 8 400 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 400 800 1200 1600 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 102 Cies 8 6 4 2 IC = 800A IC = 1600A 103 101 Coes 102 100 Cres VGE = 0V f = 1MHz IC = 320A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 .5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -1600A/µsec Tj = 25°C Irr REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, trr, (ns) 103 td(off) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A 16 12 8 4 SWITCHING TIME, (ns) tf td(on) VCC = 200V VCC = 300V 102 102 trr 101 tr VCC = 300V VGE = ±15V RG = 0.78 Ω Tj = 125°C 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 500 1000 1500 2000 2500 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800DU-12H Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.09 °C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4