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PSBT50

PSBT50

  • 厂商:

    POWERSEM

  • 封装:

  • 描述:

    PSBT50 - Single Phase Full Controlled Bridges - Powersem GmbH

  • 数据手册
  • 价格&库存
PSBT50 数据手册
Single Phase Full Controlled Bridges Preliminary Data Sheet VRSM VDSM 700 900 1300 1500 *1700 VRRM VDRM 600 800 1200 1400 *1600 Type PSBT 50/06 PSBT 50/08 PSBT 50/12 PSBT 50/14 PSBT 50/16 PSBT 50 IdAV VRRM = 53 A = 400-1600 V ~ ~ * Delivery on request Symbol IdAV ITSM Test Conditions TC = 85 °C TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 180° sine, per module t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 53 550 600 500 550 1520 1520 1250 1250 150 A A A A A A2 s A2 s A2 s A2 s A/µs Features • Package with fast-on terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Low forward voltage drop • UL registered E 148688 Applications • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Motor control • Power converter ∫ i2 dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TJVM repetitive, IT = 50 A f = 50Hz, tP = 200µs VD = 2/3 VDRM IG = 0.3 A non repetitive, IT = ½ . IdAV diG/dt = 0.3 A/µs 500 1000 ≤ ≤ 10 5 0.5 A/µs V/µs W W W V °C °C °C V∼ V∼ Nm g (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight TVJ = TVJM VDR = 2/3 VDRM RGK = ∞, method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30µs tP = 500µs Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density Package, style and outline Dimensions in mm (1mm = 0.0394“) 10 -40 ... + 125 125 -40 ... + 125 50/60 HZ, RMS IISOL ≤ 1 mA Mounting torque typ. t = 1 min t=1s (M5) 2500 3000 2 - 2.5 100 POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSBT 50 Symbol ID, IR VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJK dS dA a Test Conditions Characteristic Value 5 1.64 0.85 11 1.5 1.6 100 200 0.2 5 450 200 2 250 0.9 0.225 1.1 0.275 16.0 7.6 50 mA V V mΩ V V mA mA V mA mA mA µs µs K/W K/W K/W K/W mm mm m/s2 TVJ = TVJM, VR = VRRM, VD = VDRM ≤ IT, IF = 80A, TVJ = 25°C ≤ For power-loss calculations only (TVJ = TVJM) VD = 6V VD = 6V TVJ = TVJM TVJ = TVJM TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ TVJ = 25°C, tP = 10µs IG = 0.45A, diG/dt = 0.45A/µs TVJ = 25°C, VD = 6V, RGK = ∞ TVJ = 25°C, VD = ½ VDRM IG = 0.45A, diG/dt = 0.45A/µs TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V -di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM per thyristor; sine 180°el per module per thyristor; sine 180° el per module Creeping distance on surface Creeping distance in air Max. allowable acceleration 200 T [A] 150 1:T VJ = 25°C VJ =25°C IF(OV) -----IFSM us IFSM (A) TVJ=45°C TVJ=150°C 550 490 2:T VJ = 125°C 100 1.6 1.4 1.2 1 10 100 1 tgd 2 0 VRRM 50 IF 0 0.5 1 1.5 2 VF [V] 1 10 100 I [mA] G 1000 0.8 1/2 VRRM 0.6 0.4 0 10 1 VRRM 1 2 10 t[ms] 10 3 10 Fig. 1 Forward current vs. voltage drop per diode or thyristor Fig. 2 Gate trigger delay time Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSBT 50 10 V 70 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W 6 [A] 60 50 40 DC sin.180° rec.120° rec.60° rec.30° 1 30 5 4 VG 20 10 ITAV 0 50 100 TC (°C) 150 200 2 1 3 0.1 10 0 10 1 IG 10 2 10 3 mA 10 4 Fig.4 Gate trigger characteristic Fig.5 Maximum forward current at case temperature K/W 1.2 1 0.8 0.6 0.4 0.2 Z thJK Z thJC Z th 0.01 0.1 t[s] 1 10 Fig.6 Transient thermal impedance per thyristor or diode (calculated) 200 [W] 175 150 125 100 75 50 25 PVTOT 0 DC sin.180° rec.120° rec.60° rec.30° 10 ITAVM 30 0 50 [A] 1.02 110 115 80 PSBT 50 0.28 0.15 0.4 = RTHCA [K/W] TC 85 90 95 0.61 100 105 2.27 120 °C 125 Tamb 50 100 [K] 150 Fig. 7 Power dissipation vs. direct output current and ambient temperature POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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