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PSBT75

PSBT75

  • 厂商:

    POWERSEM

  • 封装:

  • 描述:

    PSBT75 - Single Phase Fully Controlled Bridges - Powersem GmbH

  • 数据手册
  • 价格&库存
PSBT75 数据手册
Single Phase Fully Controlled Bridges Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 Type PSBT 75/04 PSBT 75/08 PSBT 75/12 PSBT 75/14 PSBT 75/16 PSBT 75 ITAVM VRRM = 74A = 400-1600 V ~ ~ * Delivery on request Symbol ITAVM ITSM Test Conditions TC = 85 °C TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 per module t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 74 1150 1230 1000 1070 6600 6280 5000 4750 100 A A A A A A2 s A2 s A2 s A2 s A/µs Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Low forward voltage drop • UL registered E 148688 Applications • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Motor control • Power converter ∫ i2 dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TJVM repetitive, IT = 150 A f = 50Hz, tP = 200µs VD = 2/3 VDRM IG = 0.3 A non repetitive, IT = ITAVM diG/dt = 0.3 A/µs 500 1000 10 5 0.5 10 -40 ... + 125 125 -40 ... + 125 A/µs V/µs W W W V °C °C °C V∼ V∼ Nm Nm Nm g (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md TVJ = TVJM VDR = 2/3 VDRM RGK = ∞, method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30µs tP = 300µs Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density Package, style and outline Dimensions in mm (1mm = 0.0394“) 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s (M5) (M3) (M5) 2500 3000 5 1.5 5 220 Mounting torque Terminal connection torque typ. Weight POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSBT 75 Symbol ID, IR VT VTO rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJK dS dA a Test Conditions Characteristic Value 5 1.57 0.85 6 1.0 1.6 100 150 0.2 5 200 150 2 150 0.66 0.165 0.93 0.2325 8.0 4.5 50 mA V V mΩ V V mA mA V mA mA mA µs µs K/W K/W K/W K/W mm mm m/s2 TVJ = TVJM, VR = VRRM, VD = VDRM ≤ IT = 150A, TVJ = 25°C ≤ For power-loss calculations only (TVJ = TVJM) VD = 6V VD = 6V TVJ = TVJM TVJ = TVJM TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ TVJ = 25°C, tP = 10µs IG = 0.3A, diG/dt = 0.3A/µs TVJ = 25°C, VD = 6V, RGK = ∞ TVJ = 25°C, VD = ½ VDRM IG = 0.3A, diG/dt = 0.3A/µs TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V -di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM per thyristor; sine 180°el per module per thyristor; sine 180° el per module Creeping distance on surface Creeping distance in air Max. allowable acceleration 300 1:TVJ= 125°C [A] 250 2:TVJ= 25°C 200 150 100 50 IF 0 0.5 1 VF[V] T us VJ =25°C I T(OV) -----ITSM ITSM (A) TVJ=45°C TVJ=150°C 1000 1.6 1150 100 1.4 tgd 1.2 1 10 0 VRRM 0.8 1/2 VRRM 1 0.6 1 VRRM 2 1.5 2 1 10 100 I [mA] G 1000 0.4 10 0 10 1 t[ms] 10 2 10 3 Fig. 1 Forward current vs. voltage drop per diode or thyristor Fig. 2 Gate trigger delay time Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration POWERSEM GmbH, Walpersdorfer Str.53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSBT 75 10 V 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W 6 5 4 80 DC [A] sin.180° rec.120° 60 rec.60° rec.30° 1 40 20 VG 2 1 3 ITAV 0 50 100 T (°C) C 150 200 0.1 10 0 10 1 IG 10 2 10 3 mA 10 4 Fig.4 Gate trigger characteristic Fig.5 Maximum forward current at case temperature K/W 1 0.8 0.6 0.4 0.2 Z th Z thJK Z thJC 0.01 0.1 t[s] 1 10 Fig.6 Transient thermal impedance per thyristor or diode (calculated) 300 [W] PSBT 75 250 200 0.39 75 TC 0.17 0.09 = RTHCA [K/W] 0.25 80 85 90 95 100 150 0.67 105 110 100 50 PVTOT 0 DC sin.180° rec.120° rec.60° rec.30° 10 30 ITAVM 50 70 0 [A] 1.5 115 120 °C 125 Tamb 50 100 [K] 150 Fig. 7 Power dissipation vs. direct output current and ambient temperature POWERSEM GmbH, Walpersdorfer Str.53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSBT75 价格&库存

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