BC556

BC556 TECHNICAL SPECIFICATION PNP Planar Epitaxial Transistor TO-92 DIM A B C D E F G H MIN 4.32 4.45 3.18 0.41 0.35 5q 1.14 1.14 12.70 MAX 5.33 5.2 4.19 0.50 0.50 5q 1.40 1.53 - 1.COLLECTOR 2.BASE 3. EMITTER K Absolute Maximun Ratings (Ta=25oC) Symbol Collector-Emmiter Voltage Collector-Emmitor Voltage Collector Base Voltage Emitter Base Voltage Collector current Continuous Peak Base Current - Peak Emitter Current - Peak Collector Power Dissapation Ta = 25 °C Operating and Storage Junction THERMAL RESISTANCE Junction to ambient Rth(j-a) 250 °C / W VCEO VCES VCBO VEBO IC ICM IBM IE M P TA Tj Tstg Ratings 65 80 80 5 100 200 200 200 500 (-55 to +150) Unit V V V V mA mA mA mA mW °C www.rectron.com Characteristics Ratings (at Ta = 25°C unless otherwise specified) Symbol Collector Emitter Voltage Collector Base voltage Emitter Base Voltage Collector Cut off Current VCEO VCBO VEBO ICBO Test Conditions IC = 2mA, IB=0 IC = 100uA, IE=0 IE = 100uA, IC =0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, TJ = 150°C VCE = 80V VCE = 80V, TJ = 125°C VCE = 5V. IC = 2mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 10mA, IB = 0.5mA IC = 100mA, IB= 5mA IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V min. 65 80 5 - Typ. 0.2 0.2 - max. 15 4 15 4 475 Unit V V V nA uA nA uA Collector Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter on Voltage ICES hFE VCE (SAT) VBE (SAT) VBE (SAT) 75 0.55 - 0.09 0.25 0.7 0.9 0.66 - 0.3 0.65 0.7 0.82 V V V Dynamics Characteristics Transition Frequency Collector Output Capacitance Nose Figure fT V CBO NF IC = 10mA, VCE = 5V f = 100MHz VCB = 10V, f = 1MHz VCE = 5V, IC = 0.2mA RS N  I .+] B = 200 Hz 2 10 dB 150 6 MHz pF