2SK1161-E

2SK1161, 2SK1162 Silicon N Channel MOS FET REJ03G0912-0200 (Previous: ADE-208-1250) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2SK1161 2SK1162 VGSS ID ID(pulse)* IDR 2 Pch* Tch Tstg 1 Symbol VDSS Ratings 450 500 ±30 10 30 10 100 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1161 2SK1162 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 500 ±30 — — 2.0 — — 4.0 — — — — — — — — — Typ — — — — — 0.6 0.7 7.0 1050 280 40 15 60 90 45 1.0 350 Max — — ±10 250 3.0 0.8 0.9 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V 3 ID = 5 A, VGS = 10 V * ID = 5 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6 Ω 3 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1161 current 2SK1162 Gate to source cutoff voltage Static drain to source on 2SK1161 state resistance 2SK1162 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 100 A/µs Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1161, 2SK1162 Main Characteristics Power vs. Temperature Derating 120 100 30 Drain Current ID (A) re a Maximum Safe Operation Area Channel Dissipation Pch (W) 10 µs 0 µs DS 80 10 3 1.0 0.3 0.1 O is per Lim at ite ion d in by th R is A D PW C O pe ra 10 = ) 1 10 m s C (o n m s tio (1 25 n 40 (T sh ot = ) Ta = 25°C 1 3 10 °C ) 2SK1162 2SK1161 0 50 100 150 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V 7V 6V Pulse Test 12 5V 20 Typical Transfer Characteristics –25°C VDS = 20 V Pulse Test TC = 25°C Drain Current ID (A) Drain Current ID (A) 16 16 12 75°C 8 8 4 VGS = 4 V 0 10 20 30 40 50 4 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 10 A 6 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test VGS = 10 V Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance RDS (on) (Ω) 8 2 1.0 0.5 15 V 4 5A 2 ID = 2 A 0.2 0.1 0.05 0.5 0 4 8 12 16 20 1.0 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 2SK1161, 2SK1162 Static Drain to Source on State Resistance vs. Temperature 2.0 VGS = 10 V Pulse Test Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 50 VDS = 20 V Pulse Test –25°C TC = 25°C 75°C 1.6 20 10 5 1.2 ID = 10 A 0.8 2, 5 A 2 1.0 0.5 0.1 0.4 0 –40 0 40 80 120 160 0.2 0.5 1.0 2 5 10 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 5,000 5,000 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) Capacitance C (pF) 2,000 1,000 500 200 100 50 0.2 1,000 Ciss Coss 100 10 5 0.5 1.0 2 5 10 20 0 10 20 Crss 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 500 20 500 Switching Characteristics VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% • • 400 VDS 300 VDD = 100 V 250 V 400 V VGS 16 Switching Time t (ns) 200 100 50 td (off) 12 tf tr td (on) 200 ID = 7 A 100 VDD = 400 V 250 V 100 V 8 16 24 32 40 8 20 10 5 0.2 4 0 0 0.5 1.0 2 5 10 20 Gate Charge Qg (nc) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 4 of 6 2SK1161, 2SK1162 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 16 Pulse Test 12 8 4 5, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 θch–c (t) = γS (t) • θch–c θch–c = 1.25°C/W, TC = 25°C PDM D = PW T 0.03 h 1S 0.01 10 µ ul ot P se T 100 µ 1m 10 m 100 m PW 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 10 % Waveforms 90 % 10 % 90 % tr 90 % td (off) 10 % 50 Ω Vin = 10 V . VDD = 30 V . td (on) tf Rev.2.00 Sep 07, 2005 page 5 of 6 2SK1161, 2SK1162 Package Dimensions JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Package Name TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 15.6 ± 0.3 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1161-E 2SK1162-E 360 pcs 360 pcs Quantity Box (Tube) Box (Tube) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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