2SK2220-E

2SK2220, 2SK2221 Silicon N Channel MOS FET REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Source (Flange) 3. Drain 1 2 S 3 Rev.2.00 Sep 07, 2005 page 1 of 5 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Symbol VDSX VGSS ID IDR Pch*1 Tch Tstg Ratings 180 200 ±20 8 8 100 150 –55 to +150 Unit V V A A W °C °C Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK2220 2SK2221 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 2. Pulse Test Symbol V(BR)DSX V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff Min 180 200 ±20 0.15 — 0.7 — — — — — Typ — — — — — 1.0 600 800 8 250 90 Max — — — 1.45 12 1.4 — — — — — Unit V V V V S pF pF pF ns ns Test conditions ID = 10 mA, VGS = –10 V IG = ±100 µA, VDS = 0 ID = 100 mA, VDS = 10 V ID = 8 A, VGD = 0 V*2 ID = 3 A, VDS = 10 V*2 VGS = –5 V, VDS = 10 V, f = 1 MHz VDD = 30 V, ID = 4 A Rev.2.00 Sep 07, 2005 page 2 of 5 2SK2220, 2SK2221 Main Characteristics Power vs. Temperature Derating 150 20 Ta = 25°C 10 Maximum Safe Operation Area Channel Dissipation Pch (W) PW = PW Drain Current ID (A) 10 100 5 D C m s = 10 0 m s pe O ra (1 o Sh n tio (1 2 1.0 0.5 t) o Sh t) = (T C 25 50 2SK2220 °C ) 2SK2221 0 50 100 150 0.2 5 10 20 50 100 200 500 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 10 VGS = 10 V 9 8 7 6 6 5 4 4 3 2 2 0 0 10 20 30 40 1 50 0 Pch = 125 W TC = 25°C 10 Typical Output Characteristics TC = 25°C 9 7 6 6 5 4 4 3 2 1 2 4 6 8 0 10 VGS = 10 V 8 Drain Current ID (A) Drain Current ID (A) 8 8 2 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Typical Transfer Characteristics 10 VDS = 10 V 1.0 Typical Transfer Characteristics 25 ° C Drain Current ID (A) Drain Current ID (A) =– 25 25 =– 0.4 0.2 0 0.4 0.8 °C T 1.2 C 8 0.8 VDS = 10 V TC 6 75 0.6 4 2 0 2 4 6 8 10 1.6 75 2.0 Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 5 25 2SK2220, 2SK2221 Forward Transfer Admittance vs. Frequency 5 500 Forward Transfer Admittance yfs (S) Switching Time vs. Drain Current Switching Time t on, t off (ns) 1.0 t on 200 100 50 0.1 TC = 25°C VDS = 10 V ID = 2 A t off 0.01 20 10 5 0.1 0.001 0.0005 2k 10 k 100 k 1M 10 M 20 M 0.2 0.5 1.0 2 5 10 Frequency f (Hz) Drain Current ID (A) Switching Time Test Circuit Output RL Input 10% t on Waveforms 90% Input t off 10% Output 90% PW = 50 µs duty ratio = 1% 30 V 50 Ω Rev.2.00 Sep 07, 2005 page 4 of 5 2SK2220, 2SK2221 Package Dimensions JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Package Name TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 15.6 ± 0.3 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK2220-E 2SK2221-E Quantity 360 pcs 360 pcs Box (Tube) Box (Tube) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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