2SK2586-E

2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous: ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Rev.5.00 Sep 07, 2005 page 1 of 7 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID*2 ID(pulse)*1 IDR*2 IAP*3 EAR*3 Pch*2 Tch Tstg Ratings 60 ±20 60 240 60 45 174 125 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.0 — — 35 — — — — — — — — — Typ — — — — — 7 10 60 3550 1760 500 35 260 480 370 0.94 140 Max — — ±10 100 2.0 10 16 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 30 A, VGS = 10 V*4 ID = 30 A, VGS = 4 V*4 ID = 30 A, VDS = 10 V*4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 30 A, VGS = 10 V, RL = 1.0 Ω IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF / dt = 50 A / µs Rev.5.00 Sep 07, 2005 page 2 of 7 2SK2586 Main Characteristics Power vs. Temperature Derating 200 500 200 10 PW D C O pe Maximum Safe Operation Area 10 0 µs Channel Dissipation Pch (W) µs Drain Current ID (A) 150 100 50 20 10 5 2 1 0.5 0.1 Ta = 25°C 0.3 1 1 = 10 n m s 100 m s c Operation in this area is limited by RDS(on) (1 ra tio sh ot ) (T = 25 50 °C ) 0 50 100 150 200 3 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 6 V 5V Pulse Test Typical Transfer Characteristics 100 VDS = 10 V Pulse Test Drain Current ID (A) 60 3V Drain Current ID (A) 80 4V 3.5 V 80 60 40 40 Tc = 75°C 25°C –25°C 20 VGS = 2.5 V 20 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0005 Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test 0.8 0.6 ID = 50 A VGS = 4 V 10 V 0.4 0.2 20 A 10 A 2 4 6 8 10 0 1 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.5.00 Sep 07, 2005 page 3 of 7 2SK2586 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 0.04 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 75°C 25°C Tc = –25°C VDS = 10 V Pulse Test Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current Pulse Test 0.032 0.024 ID = 50 A 10, 20 A VGS = 4 V 10, 20, 50 A 10 V 0.016 0.008 0 –40 0 40 80 120 160 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time Reverse Recovery Time t rr (ns) 5000 2000 10000 5000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 1000 500 200 100 50 20 10 5 0.1 Ciss 2000 1000 500 Crss 200 100 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Coss di / dt = 50 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) ID = 50 A Switching Characteristics Gate to Source Voltage VGS (V) 20 5000 2000 100 80 16 Switching Time t (ns) 1000 500 200 100 50 20 10 5 0.1 0.3 60 VDS VDD = 10 V 25 V 50 V VGS td(off) tf tr td(on) 12 40 8 20 VDD = 50 V 25 V 10 V 0 40 80 120 160 4 0 200 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 1 3 10 30 100 Gate Charge Qg (nc) Drain Current ID (A) Rev.5.00 Sep 07, 2005 page 4 of 7 2SK2586 Reverse Drain Current vs. Source to Drain Voltage 100 Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 200 IAP = 45 A VDD = 25 V duty < 0.1 % Rg > 50 Ω Reverse Drain Current IDR (A) Pulse Test 80 10 V 5V VGS = 0, –5 V 160 60 120 40 80 20 40 0 25 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch – c(t) = γs (t) • θch – c θch – c = 1.0°C/W, Tc = 25°C PDM PW T 1m 10 m 100 m 1 10 D= PW T 0.03 0.02 1 lse 0.0 t pu o h 1s 100 µ 0.01 10 µ Pulse Width PW (S) Avalanche Test Circuit and Waveform EAR = 1 • L • IAP2• 2 VDSS VDSS – VDD VDS Monitor L IAP Monitor V(BR)DSS IAP VDD ID VDS Rg Vin 15 V D. U. T 50 Ω 0 VDD Rev.5.00 Sep 07, 2005 page 5 of 7 2SK2586 Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = 30 V 90% td(on) 90% td(off) tf Vin Vout Vin 10 V 50 Ω Vout Monitor 10% 10% 10% Waveform 90% tr Rev.5.00 Sep 07, 2005 page 6 of 7 2SK2586 Package Dimensions JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Package Name TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 15.6 ± 0.3 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK2586-E Quantity 30 pcs Plastic magazine Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 7 of 7 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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