BB304M

BB304M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0827-0600 (Previous ADE-208-605D) Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143Rmod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “DW –”. 2. BB304M is individual type number of RENESAS BBFET. Rev.6.00 Aug 10, 2005 page 1 of 9 BB304M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 ±10 25 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Input capacitance Output capacitance Reverse transfer capacitance Drain current Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) Ciss Coss Crss ID(op) 1 ID(op) 2 Forward transfer admittance |yfs|1 |yfs|2 Power gain PG1 PG2 Noise figure NF1 NF2 Min 12 +10 ±10 — — 0.4 0.5 2.3 0.9 0.003 9 — 22 — 24 — — — Typ — — — — — — — 2.8 1.3 0.02 15 13 27 27 29 29 1.2 1.2 Max — — — +100 ±100 1.0 1.0 3.6 2.0 0.05 19 — 34 — 32 — 1.9 — Unit V V V nA nA V V pF pF pF mA mA mS mS dB dB dB dB Test conditions ID = 200 µA, VG1S = VG2S = 0 IG1 = +10 µA, VG2S = VDS = 0 IG2 = ±10 µA, VG1S = VDS = 0 VG1S = +9 V, VG2S = VDS = 0 VG2S = ±9 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V ID = 100 µA VDS = 5 V, VG1S = 5 V ID = 100 µA VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 180 kΩ, f = 1 MHz VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 180 kΩ VDS = 9 V, VG1 = 9 V, VG2S = 6 V RG = 470 kΩ VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 180 kΩ, f = 1 kHz VDS = 9 V, VG1 = 9 V, VG2S = 6 V RG = 470 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 180 kΩ, f = 200 MHz VDS = 9 V, VG1 = 9 V, VG2S = 6 V RG = 470 kΩ, f = 200 MHz VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 180 kΩ, f = 200 MHz VDS = 9 V, VG1 = 9 V, VG2S =6 V RG = 470 kΩ, f = 200 MHz Rev.6.00 Aug 10, 2005 page 2 of 9 BB304M Main Characteristics Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 A ID Drain Source 200MHz Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input(50Ω) 1000p 36p L1 1000p 47k BBFET L2 1000p 47k Output(50Ω) 10p max 1000p 1SV70 RG 470k RFC 1SV70 1000p VD = VG1 Unit : Resistance (Ω) Capacitance (F) L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns Rev.6.00 Aug 10, 2005 page 3 of 9 BB304M Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 200 25 27 Typical Output Characteristics VG2S = 6 V VG1 = VDS Ω 0k Drain Current ID (mA) 15 100 10 50 5 RG = Ω 1M 1.5 MΩ 0 50 100 150 200 0 2 4 6 8 39 kΩ 0 47 Ω 0k 56 k Ω 0 68 0 k Ω 82 0 k 150 33 20 0 mbient Temperature Ta (°C) Drain to Source Voltage VDS (V) Drain Current vs. Gate2 to Source Voltage 25 VDS = VG1 = 9 V 270 k Ω Drain Current vs. Gate1 Voltage 25 VDS = 9 V RG = 390 kΩ 6V 15 5V 4V 3V 2V 5 VG2S = 1 V 0 2 4 6 8 10 Drain Current ID (mA) 20 20 330 15 kΩ 390 k Ω 10 470 k Ω 560 k Ω 680 k Ω 820 k Ω 1M Ω RG = 1.5 MΩ Drain Current ID (mA) 10 5 0 1.2 2.4 3.8 4.8 6.0 Gate2 to Source Voltage VG2S (V) Gate1 Voltage VG1 (V) Drain Current vs. Gate1 Voltege 25 VDS = 9 V RG = 470 kΩ 25 Drain Current vs. Gate1 Voltege VDS = 9 V RG = 560 kΩ 20 20 Drain Current ID (mA) 15 Drain Current ID (mA) 10 6V 5V 4V 3V 2V 15 10 6V 5V 4V 3V 2V VG2S = 1 V 5 VG2S = 1 V 0 2 4 6 8 10 5 0 2 4 6 8 Gate1 Voltage VG1 (V) Gate1 Voltage VG1 (V) Rev.6.00 Aug 10, 2005 page 4 of 9 Ω kΩ 10 10 BB304M Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance |yfs| (mS) 30 VDS = 9 V RG = 390 kΩ 24 f = 1 kHz 18 5V 4V 2V 3V 6V 30 VDS = 9 V RG = 470 kΩ 24 f = 1 kHz 18 5V 4V 3V 2V Forward Transfer Admittance vs. Gate1 Voltage 6V 12 12 6 VG2S = 1 V 0 2 4 6 8 10 6 VG2S = 1 V 0 2 4 6 8 10 Gate1 Voltage VG1 (V) Gate1 Voltage VG1 (V) Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance |yfs| (mS) 30 VDS = 9 V RG = 560 kΩ f = 1 kHz 40 Power Gain vs. Gate Resistance 6V 5V 4V 35 Power Gain PG (dB) 24 18 3V 2V 30 25 20 15 10 0.1 12 6 VG2S = 1 V 0 2 4 6 8 10 VDS = 9 V VG1 = 9 V VG2S = 6 V f = 200 MHz 0.2 0.5 1 2 5 10 Gate1 Voltage VG1 (V) Gate Resistance RG (MΩ) Noise Figure vs. Gate Resistance 4 40 VDS = 9 V VG1 = 9 V VG2S = 6 V f = 200 MHz 35 Power Gain vs. Drain Current Noise Figure NF (dB) Power Gain PG (dB) 3 30 25 20 15 10 0 VDS = 9 V VG1 = 9 V VG2S = 6 V RG = variable f = 200 MHz 5 10 15 20 25 30 2 1 0 0.1 0.2 0.5 1 2 5 10 Gate Resistance RG (MΩ) Drain Current ID (mA) Rev.6.00 Aug 10, 2005 page 5 of 9 BB304M Noise Figure vs. Drain Current 4 VDS = 9 V VG1 = 9 V VG2S = 6 V RG = variable f = 200 MHz 30 25 Drain Current vs. Gate Resistance 3 Drain Current ID (mA) Noise Figure NF (dB) 20 15 10 5 0 0.1 VDS = 9 V VG1 = 9 V VG2S = 6 V 0.2 0.5 1 2 5 10 2 1 0 5 10 15 20 25 30 Drain Current ID (mA) Gate Resistance RG (MΩ) Gain Reduction vs. Gate2 to Source Voltage 60 6 VDS = 9 V VG1 = 9 V VG2S = 6 V RG = 470 kΩ f = 200 MHz Input Capacitance vs. Gate2 to Source Voltage Gain Reduction GR (dB) 50 40 30 20 10 Input Capacitance Ciss (pF) 5 4 3 2 1 0 VDS = 9 V VG1 = 9 V RG = 470 kΩ f = 1 MHz 1 2 3 4 5 6 0 1 2 3 4 5 6 7 Gate2 to Source Voltage VG2S (V) Gate2 to Source Voltage VG2S (V) Rev.6.00 Aug 10, 2005 page 6 of 9 BB304M S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –5 –4 –3 –.4 –.6 –.8 –1.5 –2 –120° –1 –90° 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 1 / div. 60° –150° –30° –60° Test Condition : VDS = 9 V , VG1 = 9 V VG2S = 6 V , RG = 470 kΩ 50 to 1000 MHz (50 MHz step) Test Condition : VDS = 9 V , VG1 = 9 V VG2S = 6 V , RG = 470 kΩ 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.002 / div. 60° 150° 30° .2 4 5 10 180° 0° 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –150° –30° –.4 –120° –60° –90° –.6 –.8 –1.5 –2 –1 –5 –4 –3 Test Condition : VDS = 9 V , VG1 = 9 V VG2S = 6 V , RG = 470 kΩ 50 to 1000 MHz (50 MHz step) Test Condition : VDS = 9 V , VG1 = 9 V VG2S = 6 V , RG = 470 kΩ 50 to 1000 MHz (50 MHz step) Rev.6.00 Aug 10, 2005 page 7 of 9 BB304M S Parameter (VDS = VG1 = 9V, VG2S = 6V, RG = 470kΩ, Zo = 50Ω) f(MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 MAG. 0.996 0.993 0.987 0.978 0.972 0.954 0.943 0.925 0.910 0.893 0.880 0.861 0.847 0.829 0.816 0.804 0.791 0.779 0.764 0.753 ANG. –5.3 –10.9 –16.6 –21.9 –27.4 –33.2 –38.2 –43.2 –48.0 –52.5 –57.4 –62.1 –66.1 –69.9 –74.1 –78.2 –82.4 –86.1 –89.5 –92.4 MAG. 2.74 2.73 2.68 2.66 2.63 2.57 2.50 2.43 2.37 2.30 2.24 2.17 2.10 2.02 1.96 1.91 1.85 1.79 1.73 1.68 S21 ANG. 174.0 168.0 162.3 156.3 150.4 144.3 138.7 133.3 128.0 122.6 117.5 112.7 108.1 103.6 99.1 94.8 80.4 86.3 82.2 78.3 MAG. 0.00096 0.00130 0.00203 0.00285 0.00335 0.00385 0.00455 0.00488 0.00526 0.00522 0.00498 0.00512 0.00497 0.00455 0.00418 0.00372 0.00329 0.00275 0.00233 0.00258 S12 ANG. 98.6 84.4 83.6 72.3 69.7 68.3 63.2 55.4 59.8 56.1 53.2 49.1 53.4 53.6 51.6 55.7 62.4 73.0 82.4 105.1 MAG. 0.985 0.991 0.990 0.988 0.985 0.982 0.979 0.975 0.971 0.967 0.962 0.957 0.952 0.947 0.943 0.937 0.933 0.928 0.921 0.918 S22 ANG. –1.9 –4.5 –6.5 –9.4 –11.6 –14.0 –16.2 –18.4 –21.0 –23.0 –25.2 –27.3 –29.4 –31.6 –33.7 –35.8 –38.0 –40.0 –42.1 –44.2 Rev.6.00 Aug 10, 2005 page 8 of 9 BB304M Package Dimensions JEITA Package Code SC-61AA RENESAS Code PLSP0004ZA-A Package Name MPAK-4 / MPAK-4V MASS[Typ.] 0.013g D e2 b1 B B e A Q c E HE Reference Symbol Dimension in Millimeters L A A xM S A b L1 A3 e2 LP e A2 A I1 b5 yS A1 S e1 b b2 c c1 c b1 b3 c1 I1 b4 A-A Section B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 I1 Q Min 1.0 0 1.0 0.35 0.55 Nom 0.1 2.7 1.35 1.1 0.25 0.42 0.62 0.4 0.6 0.13 0.11 1.5 0.95 0.85 2.8 Max 1.3 0.1 1.2 0.5 0.7 0.15 3.1 1.65 2.2 0.35 0.15 0.25 3.0 0.75 0.55 0.65 0.05 0.05 0.55 0.75 1.05 1.95 0.3 Ordering Information Part Name BB304MDW-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Aug 10, 2005 page 9 of 9 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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