RJE0620JPD-00#J3

Data Sheet RJE0620JPD R07DS1235EJ0200 Rev.2.00 Mar 02, 2020 –60V, –10A, P Channel Thermal FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features        Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. High density mounting Power supply voltage applies 12 V and 24 V. AEC-Q101 compliant Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D 4 G 1 2 3 Gate Resistor Temperature Sensing Circuit Latch Circuit 1. Gate 2. Drain 3. Source 4. Drain Current Limitation Circuit Gate Shut-down Circuit S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS VGSS ID Note3 IDR IAP Note 2 EAR Note 2 Pch Note 1 Tch Tstg Drain current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1 Tch = 25C 2. Tch = 25C, Rg  50  3. It provides by the current limitation lower bound value. R07DS1235EJ0200 Rev.2.00 Mar 02, 2020 Ratings –60 –16 2.5 –10 –10 –7 210 40 150 –55 to +150 Unit V V V A A A mJ W C C Page 1 of 7 RJE0620JPD Typical Operation Characteristics (Ta = 25°C) Item Min –3.5 — — — — — — — –3.5 –10 Typ — — — — — –0.8 –0.35 175 — — Symbol ID1 ID2 ID3 V(BR)DSS Min — — –10 –60 Typ — — — — Max –16 –10 — — Unit A mA A V Test Conditions VGS = –3.5 V, VDS = –10 V Note 5 VGS = –1.2 V, VDS = –10 V VGS = –12 V, VDS = –10 V Note 5 ID = –10 mA, VGS = 0 V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS1 VGS(off) |yfs| RDS(on) RDS(on) Coss –16 2.5 — — — — — — — –1.0 5 — — — — — — — — — –0.8 –0.35 — — 9 131 100 444 — — –100 –50 –1 100 — — –10 –2.1 — 180 120 — V V A A A A mA mA A V S m m pF IG = –800 A, VDS = 0 IG = 100 A, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VGS = –1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –5 A, VDS = –10 V Note 5 ID = –5 A, VGS = –4 V Note 5 ID = –5 A, VGS = –10 V Note 5 VDS = –10 V, VGS = 0, f = 1MHz Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage td(on) tr td(off) tf VDF — — — — — 2.6 10.6 3.1 6.0 –0.93 — — — — — s s s s V VGS = –10 V, ID= –5 A, RL = 6  Body-drain diode reverse recovery time trr — 100 — ns IF = –10 A, VGS = 0 diF/dt = 50 A/s tos1 — 2.2 — ms VGS = –5 V, VDD = –16 V tos2 — 1.1 — ms VGS = –5 V, VDD = –24 V Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Max — –1.2 –100 –50 –1 — — — –12 — Unit V V A A A mA mA C V A Test Conditions Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Vi = –1.2 V, VDS = 0 Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Channel temperature VGS = –12 V, VDS = –10 V Note 4 Notes; 4. Pulse test Electrical Characteristics (Ta = 25°C) Item Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Output capacitance Over load shut down operation time Note 6 IF = –10 A, VGS = 0 Note 5 Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. R07DS1235EJ0200 Rev.2.00 Mar 02, 2020 Page 2 of 7 RJE0620JPD Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 50 30 20 10 50 150 1 PW = 10 ms 200 Operation in this area is limited RDS(on) 0.1 1 100 Case Temperature Tc (C) Typical Output Characteristics Typical Transfer Characteristics 10 4 V VGS = 3.5 V Drain Current ID (A) 8 5 V 8 V 6 10 V 4 2 VDS = 10 V Pulse Test 8 6 4 Tc = 150C 2 25C 40C Pulse Test 2 0 4 6 8 10 1 0 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current 2000 Pulse Test 1600 1200 ID = 5 A 2 A 800 1 A 400 0 0 2 4 6 8 10 12 14 16 Gate to Source Voltage VGS (V) R07DS1235EJ0200 Rev.2.00 Mar 02, 2020 Static Drain to Source On State Resistance RDS(on) (m) Drain to Source Saturation Voltage VDS(on) (mV) 10 Drain to Source Voltage VDS (V) 10 Drain Current ID (A) 100 DC Operation (Tc = 25C) 0.1 0.01 0 0 10 s m Drain Current ID (A) 40 Thermal shut down operation area 1 Channel Dissipation Pch (W) Ta = 25C 1000 Pulse Test VGS = 4 V 100 10 0.1 10 V 1 10 Drain Current ID (A) Page 3 of 7 Static Drain to Source On State Resistance vs. Temperature Body-Drain Diode Reverse Recovery Time 250 1000 Reverse Recovery Time trr (ns) Static Drain to Source On State Resistance RDS(on) (mΩ) RJE0620JPD ID = −5 A Pulse Test 200 −1 A −2 A 150 VGS = −4 V −5 A ID = −1 A, −2 A 100 VGS = −10 V 50 0 −50 −25 0 25 50 75 100 125 150 10 −0.1 −1 −10 Reverse Drain Current IDR (A) Switching Characteristics Reverse Drain Current vs. Source to Drain Voltage −4 Reverse Drain Current IDR (A) td(off) tf 10 tr td(on) 1 VGS = −10 V, VDD = −30 V PW = 300 μs, duty < 1 % 0.1 −0.1 −1 −10 −2 VGS = 0 V, 5 V −1 Pulse Test −0.4 −0.8 −1.2 −1.6 −2.0 Source to Drain Voltage VSD (V) Typical Capacitance vs. Drain to Source Voltage Forward Transfer Admittance vs. Drain Current VGS = 0 f = 1 MHz 1000 100 0 −3 Drain Current ID (A) 10000 10 −5 V 0 −10 −20 −30 −40 −50 −60 Drain to Source Voltage VDS (V) R07DS1235EJ0200 Rev.2.00 Mar 02, 2020 Forward Transfer Admittance |yfs| (S) Switching Time t (μs) di / dt = 50 A / μs VGS = 0, Ta = 25°C Case Temperature Tc (°C) 100 Capacitance Coss (pF) 100 100 Tc = –40°C 10 25°C 1 150°C VDS = –10 V Pulse Test 0.1 –0.1 –1 –10 Drain Current ID (A) Page 4 of 7 RJE0620JPD Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test -16 -14 -12 -10 VDD = -16 V -8 -24 V -6 -4 -2 0 0.1 1 10 200 180 160 140 120 100 0 -2 -4 -6 -8 -10 Gate to Source Voltage VGS (V) Shutdown Time of Load-Short Test PW (ms) Normalized Transient Thermal Impedance γs (t) ID = -0.5 A Normalized Transient Thermal Impedance vs. Pulse Width 3 1 Tc = 25°C D=1 0.5 0.3 0.2 0.1 0.1 θch - c(t) = γs (t) θch - c θch - c = 3.125°C / W, Tc = 25°C 0.05 0.02 PDM 0.03 0.01 0.01 10 µ h 1s ot pu lse 100 µ D= PW T PW T 1m 10 m 100 m 1 10 Pulse Width PW (s) R07DS1235EJ0200 Rev.2.00 Mar 02, 2020 Page 5 of 7 RJE0620JPD Switching Time Test Circuit Waveform Vout Monitor Vin Monitor Vin 10% D.U.T. Rg RL 90% VDD = –30 V Vin –10 V Vout 10% td(on) tr Avalanche Test Circuit VDS Monitor 90% 90% 10% td(off) tf Avalanche Waveform L EAR = 1 2 VDSS L · I AP2 · VDSS – VDD IAP Monitor Rg Vin –10 V 0 D. U. T VDD VDD 50 Ω ID IAP VDS V(BR)DSS R07DS1235EJ0200 Rev.2.00 Mar 02, 2020 Page 6 of 7 RJE0620JPD Package Dimensions JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Previous Code DPAK(S) / DPAK(S)V MASS[Typ.] 0.28g Unit: mm 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) 6.5 ± 0.3 5.6 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Package Name DPAK(S) 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 0.8 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 Ordering Information Orderable Part Number RJE0620JPD-00-J3 R07DS1235EJ0200 Rev.2.00 Mar 02, 2020 Quantity 3000 pcs Shipping Container Taping Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights, or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples. 3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by 5. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The intended applications for each Renesas Electronics product depends on the you or third parties arising from such alteration, modification, copying or reverse engineering. product’s quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; industrial robots; etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key financial terminal systems; safety control equipment; etc. Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electronics product that is inconsistent with any Renesas Electronics data sheet, user’s manual or other Renesas Electronics document. 6. When using Renesas Electronics products, refer to the latest product information (data sheets, user’s manuals, application notes, “General Notes for Handling and Using Semiconductor Devices” in the reliability handbook, etc.), and ensure that usage conditions are within the ranges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in compliance with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or transfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document. 11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. (Rev.4.0-1 November 2017) http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics Corporation TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan Renesas Electronics America Inc. 1001 Murphy Ranch Road, Milpitas, CA 95035, U.S.A. Tel: +1-408-432-8888, Fax: +1-408-434-5351 Renesas Electronics Canada Limited 9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3 Tel: +1-905-237-2004 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 101-T01, Floor 1, Building 7, Yard No. 7, 8th Street, Shangdi, Haidian District, Beijing 100085, China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai 200333, China Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit No 3A-1 Level 3A Tower 8 UOA Business Park, No 1 Jalan Pengaturcara U1/51A, Seksyen U1, 40150 Shah Alam, Selangor, Malaysia Tel: +60-3-5022-1288, Fax: +60-3-5022-1290 Renesas Electronics India Pvt. Ltd. No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India Tel: +91-80-67208700 Renesas Electronics Korea Co., Ltd. 17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea Tel: +82-2-558-3737, Fax: +82-2-558-5338 © 2019 Renesas Electronics Corporation. All rights reserved. Colophon 8.0