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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1804
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
The µPA1804 is a switching device which can be
8
driven directly by a 4.5 V power source.
5
The µPA1804 features a low on-state resistance and
1, 5, 8 : Drain
2, 3, 6, 7: Source
4
: Gate
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
1.2 MAX.
1.0±0.05
0.25
and so on.
3° +5°
–3°
FEATURES
0.1±0.05
• Can be driven by a 4.5 V power source
1
4
0.5
0.6 +0.15
–0.1
• Low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 32 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
6.4 ±0.2
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1804GR-9JG
0.65
0.27 +0.03
–0.08
Power TSSOP8
0.10 M
EQUIVALENT CIRCUIT
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±8.0
A
ID(pulse)
±32
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note1
Total Power Dissipation
Note2
1.0 ±0.2
0.1
0.8 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain Current (pulse)
4.4 ±0.1
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13868EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1998,1999
µ PA1804
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
2.1
2.5
V
| yfs |
VDS = 10 V, ID = 4.0 A
3
8.7
RDS(on)1
VGS = 10 V, ID = 4.0 A
18
23
mΩ
RDS(on)2
VGS = 4.5 V, ID = 4.0 A
24
32
mΩ
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = 10 V
761
pF
Output Capacitance
Coss
VGS = 0 V
258
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
99
pF
Turn-on Delay Time
td(on)
VDD = 15 V
24
ns
tr
ID = 4.0 A
83
ns
VGS(on) = 10 V
46
ns
tf
RG = 10 Ω
29
ns
Total Gate Charge
QG
VDS = 24 V
13.5
nC
Gate to Source Charge
QGS
ID = 8.0 A
2.4
nC
Gate to Drain Charge
QGD
VGS = 10 V
3.7
nC
Rise Time
Turn-off Delay Time
td(off)
Fall Time
Diode Forward Voltage
VF(S-D)
IF = 8.0 A, VGS = 0 V
0.86
V
Reverse Recovery Time
trr
IF = 8.0 A, VGS = 0 V
27
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A / µs
16
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
PG.
90 %
90 %
ID
VGS
0
ID
Wave Form
τ
τ = 1µ s
Duty Cycle ≤ 1 %
10 %
0 10 %
tr
td(on)
ton
RL
50 Ω
VDD
90 %
VDD
ID
2
VGS(on)
10 %
IG = 2 mA
td(off)
tf
toff
Data Sheet D13868EJ2V0DS
µ PA1804
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
★
FORWARD BIAS SAFE OPERATING AREA
100
d
ite V)
Lim 10
=
R V
(@
ID(pulse)
n)
(o
DS
GS
80
ID - Drain Current - A
dT - Derating Factor - %
100
60
40
20
10
PW
ID(DC)
10
10
0m
s
DC
1
=1
ms
ms
0.1
TA = 25˚C
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
0
30
60
120
90
TA - Ambient Temperature - ˚C
0.01
0.1
150
10
1
100
VDS - Drain to Source Voltage - V
2
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TRANSFER CHARACTERISTICS
30
100
VDS = 10 V
VGS = 10 V
10
ID - Drain Current - A
ID - Drain Current - A
25
4.5 V
20
15
10
5
1
TA = −25˚C
25˚C
75˚C
125˚C
0.1
0.01
0.001
0.0001
0
0.2
0.00001
0.6
0.4
0.8
1.0
4.0
2.0
3.0
VGS - Gate to Sorce Voltage - V
1.0
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
2.5
VDS = 10 V
ID = 1 mA
2.0
1.5
−50
0
50
100
150
100
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
10
TA = −25˚C
25˚C
75˚C
125˚C
1
0.1
0.01
0.1
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - ˚C
Data Sheet D13868EJ2V0DS
3
50
VGS = 4.5 V
40
TA = 125˚C
75˚C
30
25˚C
−25˚C
20
RDS (on) - Drain to Source On-state Resistance - mΩ
10
0.01
0.1
1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
ID = 4.0 A
VGS = 4.5 V
30
10 V
20
10
−50
0
50
100
150
RDS (on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
µ PA1804
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
40
30
TA = 125˚C
75˚C
20
10
0.01
40
30
20
10
0
4
12
8
16
20
SWITCHING CHARACTERISTICS
1000
f = 1 MHz
VGS = 0 V
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
100
VGS - Gate to Source Voltage - V
1000
Ciss
Coss
100
Crss
10
10
100
tr
100
tf
td(off)
td(on)
10
VDD = 15 V
VGS(on) = 10V
1 RG = 10 Ω
0.1
1
ID - Drain Current - A
VDS - Drain Source Voltage - V
4
0.1
1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 4.0 A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1
25˚C
−25˚C
Tch - Channel Temperature - ˚C
10000
VGS = 10 V
Data Sheet D13868EJ2V0DS
10
µ PA1804
DYNAMIC INPUT CHARACTERISTICS
12
ID = 8.0 A
VGS - Gate to Source Voltage - V
IF - Source to Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
1
0.1
0.01
0.4
0.8
0.6
VDD = 24 V
15 V
6V
8
6
4
2
0
1.2
1.0
10
2
4
10
12
14
16
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - ˚C/W
8
Qg - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
★
6
Mounted on ceramic
Substrate of 50 cm2 x 1.1 mm
Single Pulse
100
62.5˚C/W
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet D13868EJ2V0DS
5
µ PA1804
[MEMO]
6
Data Sheet D13868EJ2V0DS
µ PA1804
[MEMO]
Data Sheet D13868EJ2V0DS
7
µ PA1804
• The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
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