BD6903EFV

1/4 STRUCTURE PRODUCT SERIES TYPE FUNCTION Silicon monolithic integrated circuits 2-in-1 motor driver for VTR BD6903EFV ・VTR cylinder motor driver (Sensorless 3-phase full-wave soft switching drive system) ・VTR loading motor driver ○Absolute maximum ratings (Ta=25℃) Parameter Supply voltage Power dissipation Operating temperature range Storage temperature range Maximum output current (cylinder block) Maximum output current (loading block) Junction temperature ※1 ※2 Symbol VCC VM VG Pd Topr Tstg Iomax1 Iomax2 Tjmax Limit 7 15 20 1000※ 1 Unit V V V mW ℃ ℃ mA mA ℃ -20～+75 -55～+150 800※ 1000 2 ※2 +150 70mm×70mm×1.6mm glass epoxy board. Derating in done at 8.0mW/℃ for operating above Ta=25℃. Do not, however exceed Pd, ASO and Tjmax=150℃. ○Recommended operating conditions (Ta= -25～+75℃) Parameter Supply voltage UIN, VIN, WIN in-phase input voltage range PG amp in-phase input voltage range Symbol VCC VM VG VBEMFD VPD Min 4.5 9 VM+3 0 1.5 Typ 5 12 17 Max 5.5 13.5 19 VM 3.0 Unit V V V V V This product described in this specification isn’t judged whether it applies to COCOM regulations. Please confirm in case of export. This product isn’t designed for protection against radioactive rays. REV. B 2/4 ○Electrical characteristics (Unless otherwise specified, Ta=25℃, VCC=5V, VM =12V, VG=17V) Parameter Overall VCC total supply current VM total supply current 1 VM total supply current 2 Output High-side output saturation voltage Low-side output saturation voltage Torque reference EC input bias current Torque reference start voltage Torque reference I/O gain Soft switch CT1, CT2 charge current CT1, CT2 discharge current High CT1, CT2 clamp voltage Low CT1, CT2 clamp voltage Startup control logic CST charge current CST discharge current High CST clamp voltage Low CST clamp voltage PG amp Input bias current DC bias voltage Voltage gain 1 High output voltage Low output voltage HYS amp Hysteresis width PFGpin High output voltage Middle output voltage Low output voltage Loading High-level LIN input Middle-level LIN input Low-level LIN input LIN bias voltage Output saturation voltage VLINH VLINM VLINL VLINB VCE 3.5 2.35 2.35 2.5 0.3 2.65 1.5 2.65 0.6 V V V V IO=200mA, V total of output transistor high-side and low-side voltage ※Source currents are treated as negative while sinking currents are treated as positive. Loading: Forward rotation Loading: Brake Loading: Reverse rotation VPFGP VPFGM VPFGL 4.5 2.25 2.75 0.5 V V V IO=-10μA IO=±10μA IO=10μA VHYSP -75 -100 -125 mV IPGVPG AV1 VOHP VOLP 2.25 17.5 3.4 0.1 2.5 18.8 3.75 1.2 1.6 0.25 2.75 μA V dB V V PG-=GND PG-=PGOUT f=1KHz IOH=-1mA IOL=1mA ICSTD ICSTI VCSTH VCSTL -20 2 2.4 0.8 -14 6 2.8 1.0 -6 10 3.3 1.3 μA μA V V ICTD ICTI VCTH VCTL -50 27 4.4 0.8 -35 40 4.7 1.0 -25 56 1.3 μA μA V V IEC VECR Gio 2.35 0.72 0.5 2.5 0.99 2 2.65 1.28 μA V A/V EC=2.6V-2.7V Gain output (HLM) RRNF = 0.5Ω VOH VOL 0.4 0.3 0.8 0.6 V V Io=-400mA Io=400mA ICC IM1 IM2 9.2 1.4 1.4 14.2 2.8 2.8 mA mA mA LIN=H or L LIN=M Symbol Limit Min Typ Max Unit Conditions REV. B 3/4 ○Package outline Max 6.85 (include. BURR) Product No. BD6903EFV Lot No. HTSSOP-B20 (Unit:mm) ○Block diagram ○Pin No. / Pin name Pin No. VCC Pin name GND LIN EC CT1 CT2 CST CNF PGOUT PGVCC W V RNF U VG VM OUT1 OUT2 LGND PFG Back EMF detection comparator output VM 1 2 3 4 5 U Drive signal Pre-drive selector Buffer Startup control logic V 6 7 8 9 10 11 12 13 W RNF CST VG CT1 CT2 Soft switch waveform ERR Amp CS Amp TSD Control logic Pre-drive LIN 14 15 16 17 EC CNF VCC PG Amp Hysteresis comparator PGFG synthesis LGND 18 19 20 PG- PGOUT PFG GND OUT2 OUT1 REV. B 4/4 ○Operation Notes (1) Absolute maximum ratings Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range (Topr) may result in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such damage is suffered. The implementation of a physical safety measure such as a fuse should be considered when use of the IC in a special mode where the absolute maximum ratings may be exceeded is anticipated. (2) Power supply lines Regenerated current may flow as a result of the motor's back electromotive force. Insert capacitors between the power supply and ground pins to serve as a route for regenerated current. Determine the capacitance in full consideration of all the characteristics of the electrolytic capacitor, because the electrolytic capacitor may loose some capacitance at low temperatures. If the connected power supply does not have sufficient current absorption capacity, regenerative current will cause the voltage on the power supply line to rise, which combined with the product and its peripheral circuitry may exceed the absolute maximum ratings. It is recommended to implement a physical safety measure such as the insertion of a voltage clamp diode between the power supply and GND pins. (3) Ground potential Ensure a minimum GND pin potential in all operating conditions. (4) Setting of heat Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. This IC exposes its frame of the backside of package. Note that this part is assumed to use after providing heat dissipation treatment to improve heat dissipation efficiency. Try to occupy as wide as possible with heat dissipation pattern not only on the board surface but also the backside. (5) Actions in strong magnetic field Use caution when using the IC in the presence of a strong magnetic field as doing so may cause the IC to malfunction. (6) ASO When using the IC, set the output transistor for the motor so that it does not exceed absolute maximum ratings or ASO. (7) Thermal shutdown circuit This IC incorporates a TSD (thermal shutdown) circuit (TSD circuit). If the temperature of the chip reaches the following temperature, the motor coil output will be opened.The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. TSD on temperature [°C] (typ.) 170 (8) Ground Wiring Pattern When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either. Hysteresis temperature [°C] (typ.) 20 REV. 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