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BR25G256-3

BR25G256-3

  • 厂商:

    ROHM(罗姆)

  • 封装:

    DIP8

  • 描述:

    IC EEPROM 256KBIT SPI 20MHZ 8DIP

  • 数据手册
  • 价格&库存
BR25G256-3 数据手册
Datasheet Serial EEPROM Series Standard EEPROM SPI BUS EEPROM BR25G256-3 General Description BR25G256-3 is a 256Kbit serial EEPROM of SPI BUS interface. Features Packages W(Typ) x D(Typ) x H(Max) ◼ ◼ ◼ High Speed Clock Action up to 20MHz (Max) Wait Function by HOLDB Terminal Part or Whole of Memory Arrays Settable as Read only Memory Area by Program ◼ 1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use. ◼ UP to 64 Byte in Page Write Mode. ◼ For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) ◼ Self-timed Programming Cycle ◼ Low Current Consumption ➢ At Write Action (5V) : 0.6mA (Typ) ➢ At Read Action (5V) : 2.0mA (Typ) ➢ At Standby Action (5V) : 0.1µA (Typ) ◼ Address Auto Increment Function at Read Action ◼ Prevention of Write Mistake ➢ Write Prohibition at Power On ➢ Write Prohibition by Command Code (WRDI) ➢ Write Prohibition by WPB Pin ➢ Write Prohibition Block Setting by Status Registers (BP1, BP0) ➢ Prevention of Write Mistake at Low Voltage ◼ More than 100 years Data Retention. ◼ More than 1 Million Write Cycles. ◼ Bit Format 32K×8 ◼ Initial Delivery Data Memory Array: FFh Status Register: WPEN, BP1, BP0 : 0 〇Product structure: Silicon monolithic integrated circuit www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 Not Recommended for New Designs DIP-T8 SOP- J8 9.30mm x 6.50mm x 7.10mm 4.90mm x 6.00mm x 1.65mm SOP8 5.00mm x 6.20mm x 1.71mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. 〇This product is not designed protection against radioactive rays 1/31 TSZ02201-0R2R0G100640-1-2 05.Jan.2021 Rev.004 Datasheet BR25G256-3 Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Power Dissipation Storage Temperature Operating Temperature Input Voltage / Output Voltage Junction temperature Electrostatic discharge voltage (human body model) Symbol VCC Unit V Tstg Topr Ratings -0.3 to +6.5 0.80 (DIP-T8(Note1)) 0.45 (SOP8) 0.45 (SOP-J8) 0.33 (TSSOP-B8) - 65 to +150 - 40 to +85 - - 0.3 to Vcc+1.0 V Tjmax 150 °C VESD -4000 to +4000 V Pd Remarks When using at Ta=25°C or higher 8.0mW to be reduced per 1°C. W When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. When using at Ta=25°C or higher 3.3mW to be reduced per 1°C. °C °C The Max value of Input Voltage/Output Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input Voltage/Output Voltage is not under -1.0V. Junction temperature at the storage condition Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25°C, Vcc=1.6V to 5.5V) Parameter (Note2) Write Cycles Data Retention (Note2) Min 1,000,000 100 Limits Typ - Max - Unit Times Years (Note2) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Bypass Capacitor Symbol Vcc VIN C www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Ratings Min 1.6 0 0.1 Max 5.5 Vcc - 2/31 Unit V V µF TSZ02201-0R2R0G100640-1-2 05.Jan.2021 Rev.004 Datasheet BR25G256-3 DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.6V to 5.5V) Parameter Input High Voltage1 Input Low Voltage1 Input High Voltage2 Input Low Voltage2 Output Low Voltage1 Output Low Voltage2 Output High Voltage1 Output High Voltage2 Input Leakage Current Output Leakage Current Supply Current (Write) VIH1 VIL1 VIH2 VIL2 VOL1 VOL2 VOH1 VOH2 ILI ILO Min 0.7 x Vcc -0.3 (Note1) 0.8 x Vcc -0.3 (Note1) 0 0 Vcc-0.2 Vcc-0.2 -1 -1 Limits Typ - Max Vcc+1.0 0.3 x Vcc Vcc+1.0 0.2 x Vcc 0.4 0.2 Vcc Vcc 1 1 ICC1 - - 1 mA ICC2 - - 1.5 mA ICC3 - - 2 mA ICC4 - - 0.7 mA ICC5 - - 1 mA ICC6 - - 1.6 mA ICC7 - - 3 mA ICC8 - - 4 mA ICC9 - - 8 mA ISB - - 2 µA Symbol Unit Conditions V V V V V V V V µA µA 1.7≤Vcc≤5.5V 1.7≤Vcc≤5.5V 1.6≤Vcc
BR25G256-3 价格&库存

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BR25G256-3
    •  国内价格 香港价格
    • 1+15.004831+1.81986
    • 10+12.3060710+1.49254
    • 50+6.9085350+0.83790
    • 100+6.56108100+0.79576
    • 500+6.11667500+0.74186
    • 1000+5.906591000+0.71638
    • 2000+5.494502000+0.66640
    • 4000+5.429864000+0.65856

    库存:24