RB068L-40

Data Sheet Schottky Barrier Diode RB068L-40 lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 2.0 2.0 2.6±0.2 4.5±0.2 2 7 3)High reliability ① ② 0 .1±0.02 　　　 0.1 5.0±0.3 lFeatures 1)Small power mold type. (PMDS) 2)Ultra Low IR 1.2±0.3 1.5±0.2 2.0±0.2 PMDS lStructure Silicon epitaxial planer ROHM : PMDS JEDEC : SOD-106 ① ② dot (year week factory) lStructure lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ 1.55 2.9±0.1 4.0±0.1 2.8MAX lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Limits 40 40 2 40 125 -40 to +150 Unit V V A A C C Min. - Typ. - Max. 0.69 1 Unit V mA IF=2.0A VR=40V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5.3±0.1 0.05 　 9.5±0.1 1/4 2011.12 - Rev.A 12±0.2 4.2 RB068L-40 　 Data Sheet 10000 Ta=150°C FORWARD CURRENT:IF(mA) 1000 Ta=125°C REVERSE CURRENT:IR(mA) 1000 Ta=150°C 100 100 Ta=75°C Ta=25°C 10 Ta=125°C Ta=75°C 1 10 0.1 Ta=25°C Ta=-25°C 1 0.01 0.1 0 100 200 300 400 500 600 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.001 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz 700 680 FORWARD VOLTAGE:VF(mV) Ta=25°C IF=2A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 660 640 620 600 AVE:621.1mV 580 560 100 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 540 VF DISPERSION MAP 100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 0 IR DISPERSION MAP AVE:55.667nA Ta=25°C VR=40V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 600 Ta=25°C f=1MHz VR=0V n=10pcs 500 400 300 AVE:328.0pF 200 100 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.12 - Rev.A RB068L-40 　 Data Sheet 200 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 150 1cyc 30 Ta=25°C IF=0.1A IR=0.11A Irr=0.1*IR n=10pcs REVERSE RECOVERY TIME:trr(ns) 25 8.3ms 20 100 AVE:111.0A 15 AVE:16.2ns 10 50 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 200 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 150 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 300 250 Ifsm t 200 100 150 100 50 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 100 FORWARD POWER DISSIPATION:Pf(W) 3 2 D=1/2 Rth(j-c) 10 Sin(θ＝180) DC 1 1 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 1 TIME:t(s) Rth-t CHARACTERISTICS 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.12 - Rev.A RB068L-40 　 Data Sheet 0.05 5 0A 0V Io t T 3 DC D=1/2 2 VR D=t/T VR=20V Tj=150°C 0.04 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 4 0.03 0.02 DC Sin(θ＝180) D=1/2 0.01 1 Sin(θ＝180) 0 0 10 20 30 40 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 5 0A 0V t Io VR D=t/T VR=20V Tj=150°C 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 DC 3 D=1/2 2 T 20 15 AVE:17.6kV 10 1 Sin(θ＝180) 5 C=200pF R=0Ω C=100pF R=1.5kΩ 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 0 ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A