RB068L100

Data Sheet Schottky Barrier Diode RB068L100 lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 2.0 2.0 2.6±0.2 lFeatures 1)Small power mold type. (PMDS) 2)High reliability. 3)Low IR. 4.5±0.2 1.2±0.3 2 ① 2 ② 0.1±0.02 　　　 0.1 5.0±0.3 1.5±0.2 2.0±0.2 PMDS lConstruction Silicon epitaxial planer ROHM : PMDS JEDEC : SOD-106 Manufacture Date ① ② lStructure lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ 1.55 2.9±0.1 4.0±0.1 2.8MAX lAbsolute maximum ratings (Ta=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 100 VR Reverse voltage (DC) 100 Average rectified forward current (*1) 2 Io IFSM Forward current surge peak (60Hz・1cyc) 60 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1)Mounted on epoxy board,60Hz half sine wave, Tc=83°C Max. lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Unit V V A A C C Min. - Typ. - Max. 0.80 50 Unit V μA IF=2.0A VR=100V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5.3±0.1 0.05 　 9.5±0.1 Conditions 1/4 2011.10 - Rev.A 12±0.2 4.2 RB068L100 　 Data Sheet 10 Tj=150°C REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 1 Tj=125°C Tj=75°C 0.1 Tj=25°C 0.01 1000 Tj=150°C 100 Tj=75°C 10 Tj=125°C 1 Tj=25°C 0.1 Tj=-40°C 0.01 Tj=-40°C 0.001 0 200 400 600 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.001 0 20 40 60 80 100 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz 800 780 FORWARD VOLTAGE:VF(mV) 760 740 720 700 680 660 640 AVE:660.3mV 620 Tj=25°C IF=2.0A n=20pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 600 VF DISPERSION MAP 10000 Tj=25°C VR=100V n=20pcs 500 480 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 460 440 420 400 380 AVE:406pF 360 340 AVE:312.0nA 320 Tj=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) 1000 100 IR DISPERSION MAP 300 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RB068L100 　 Data Sheet 300 280 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 260 240 220 AVE:238.5A 200 180 160 140 120 100 IFSM DISPERSION MAP IFSM 8.3ms 1cyc 30 IF=0.5A IR=1.0A Irr=0.25×IR 25 20 15 10 5 AVE:7.7ns 0 trr DISPERSION MAP 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 100 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 IFSM t 100 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 On glass-epoxy substrate TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) 2 D.C. Rth(j-a) D=1/2 100 FORWARD POWER DISSIPATION:Pf(W) 1.5 Sin(θ＝180) 1 10 Rth(j-c) 1 0.5 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 1 2 3 4 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RB068L100 　 Data Sheet 0.1 5 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io t D.C. 3 D=1/2 2 Sin(θ＝180) 1 T VR D=t/T VR=50V Tj=150°C 0.08 REVERSE POWER DISSIPATION:PR (W) 4 0.06 D.C. 0.04 0.02 D=1/2 Sin(θ＝180) 0 0 20 40 60 80 100 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 50 100 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 AVE:9.2kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A