RB501V-40_1

RB501V-40 Diodes Shottky barrier diode RB501V-40 Application Low current rectification Features 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. External dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Lead size figure (Unit : mm) 0.8MIN. 0.9MIN. 1.7±0.1 2.5±0.2 UMD2 Condtruction Silicon epitaxial planer Structure 0.3±0.05 0.7±0.2 　　　 0 .1 ROHM : UMD2 JEDEC : S 0 D- 3 2 3 JEI TA : S C-90 /A do t (ye ar we e k fac to ry) Taping dimensions (Unit : mm) 4.0 ±0.1 2.0 ±0.05 φ1 .55±0.05 1.7 5±0 .1 0.3±0 .1 3.5±0.05 8.0±0.2 1.40±0 .1 4.0 ±0 .1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Param eter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction tem perature Storage tem perature Sym bol VRM VR Io IFSM Tj Tstg Lim its 45 40 100 1 125 -40 to +125 Unit V V mA A ℃ ℃ Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR Ct Min. Typ. 6.0 Max. 0.55 0.34 30 Unit V V µA pF Conditions IF=100mA IF=10mA VR=10V VR=10V , f=1MHz 2.75 2.8±0.1 Rev.B 2.1 1/3 RB501V-40 Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=125℃ 10000 Ta=125℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 Ta=25℃ 1 Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 10 0.1 0.01 0 100 20 0 300 400 50 0 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 35 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 470 FORWARD VOLTAGE:VF(mV) 300 290 280 270 AVE:281.5mV 260 REVERSE CURRENT:IR(uA) 460 450 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=100mA n=30pcs 310 Ta=25℃ IF=10mA n=30pcs 30 25 20 15 10 5 0 VF DISPERSION MAP IR DISPERSION MAP AVE:2.548uA Ta=25℃ VR=10V n=10pcs 440 430 AVE:439.5mV 420 VF DISPERSION MAP 20 20 30 Ifsm 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 16 14 12 10 8 6 4 2 0 Ta=25℃ f=1MHz IR=10V n=10pcs RESERVE RECOVERY TIME:trr(ns) 18 25 20 15 10 5 AVE:6.20ns 0 15 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 5 AVE:5.50A 0 AVE:5.81pF Ct DISPERSION MAP IFSM DISRESION MAP trr DISPERSION MAP 15 Ifsm 15 Ifsm 8.3ms 8.3ms 1cyc 1000 Rth(j-a) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) t 10 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 Rth(j-c) Mounted on epoxy board 5 5 10 IM=10mA IF=100mA 1ms time 300us 0 0 .1 1 10 100 0 0 .1 1 10 100 1 0.001 0 .1 10 1000 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS Rev.B 2/3 RB501V-40 Diodes 0.1 0.07 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 0.06 0.25 0.2 0.15 D=1/2 0.1 0.05 0 Sin(θ＝180) 0A 0V t DC Io VR D=t/T VR=20V T Tj=125℃ REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.06 Sin(θ＝180) DC 0.05 0.04 0.03 0.02 0.01 0 DC D=1/2 Sin(θ＝180) 0.04 0.02 0 0 0 .1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.3 0.25 0.2 DC 0.15 0.1 0.05 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Sin(θ＝180) D=1/2 T 0A 0V Io t VR D=t/T VR=20V Tj=125℃ 0 .2 0 10 20 30 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1