RBQ10BGE10ATL

RBQ10BGE10A Schottky Barrier Diode Data sheet ● Outline VR 100 V Io 10 A IFSM 100 A ● Features ● Inner Circuit High reliability Power mold type Cathode common dual type Low IR ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 16 Quantity(pcs) 2500 Taping Code TL Marking BQ10BM100A Switching power supply ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 100 V Reverse voltage VR Reverse direct voltage 100 V Average rectified forward current Io 60Hz half sin waveform，resistive load， Io/2 per diode，Tc=105℃Max. 10 A IFSM 60Hz half sin waveform， non-repetitive，per diode，Ta=25℃ 100 A Tj - 150 ℃ Tstg - -55 ～ 150 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj