RBQ15BGE10A
Data sheet
Schottky Barrier Diode
● Outline
VR
100
V
Io
15
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
16
Quantity(pcs)
2500
Taping Code
TL
Marking
BQ15BM100A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=105℃Max.
15
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBQ15BGE10ATL”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+16.77046
- 50+16.46990
- 100+16.17385
- 250+15.88233
- 1000+15.59307
- 国内价格 香港价格
- 1+13.173181+1.59936
- 10+9.8798810+1.19952
- 50+6.5865950+0.79968
- 100+5.27089100+0.63994
- 500+4.93994500+0.59976
- 1000+4.746221000+0.57624
- 2000+4.673582000+0.56742
- 4000+4.641294000+0.56350
- 国内价格 香港价格
- 1+13.173181+1.59936
- 10+9.8798810+1.19952
- 50+6.5865950+0.79968
- 100+5.27089100+0.63994
- 500+4.93994500+0.59976
- 1000+4.746221000+0.57624
- 2000+4.673582000+0.56742
- 4000+4.641294000+0.56350
- 国内价格
- 50+16.46990
- 100+16.17385
- 250+15.88233
- 1000+15.59307