RBQ20NS65A
Schottky Barrier Diode
Data sheet
● Outline
VR
65
V
Io
20
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BQ20NS65A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
65
V
Reverse voltage
VR
Reverse direct voltage
65
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=115℃Max.
20
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBQ20NS65ATL”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 50+8.18178
- 100+7.79552
- 国内价格 香港价格
- 1+7.176471+0.86926
- 10+5.8819610+0.71246
- 50+4.0453650+0.49000
- 100+3.84310100+0.46550
- 500+3.58419500+0.43414
- 1000+3.462831000+0.41944
- 2000+3.220112000+0.39004
- 4000+3.195844000+0.38710
- 国内价格 香港价格
- 1+7.176471+0.86926
- 10+5.8819610+0.71246
- 50+4.0453650+0.49000
- 100+3.84310100+0.46550
- 500+3.58419500+0.43414
- 1000+3.462831000+0.41944
- 2000+3.220112000+0.39004
- 4000+3.195844000+0.38710