RBQ10NS100A
Schottky Barrier Diode
Data sheet
● Outline
VR
100
V
Io
10
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BQ10NS100A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=105℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格 香港价格
- 1+14.224731+1.72382
- 10+10.6665210+1.29262
- 50+7.1083250+0.86142
- 100+5.68504100+0.68894
- 500+5.32922500+0.64582
- 1000+5.118961000+0.62034
- 2000+5.046182000+0.61152
- 4000+5.013834000+0.60760
- 国内价格 香港价格
- 1+14.224731+1.72382
- 10+10.6665210+1.29262
- 50+7.1083250+0.86142
- 100+5.68504100+0.68894
- 500+5.32922500+0.64582
- 1000+5.118961000+0.62034
- 2000+5.046182000+0.61152
- 4000+5.013834000+0.60760
- 国内价格
- 1+9.21323
- 10+6.16848
- 50+5.72975
- 100+4.82598