RBR3RSM40BTF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
40
V
Io
3
A
IFSM
150
A
● Features
● Inner Circuit
High reliability
Power mold type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
12
Quantity(pcs)
4000
Taping Code
TL1
Marking
BR3RSM40B
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
40
V
Reverse voltage
VR
Reverse direct voltage
40
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=140℃Max.
3
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
150
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBR3RSM40BTFTL1”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+5.60409
- 10+4.19431
- 50+3.56385
- 100+3.05598
- 200+2.89837
- 500+2.70573
- 国内价格 香港价格
- 1+7.400311+0.89866
- 10+5.5522510+0.67424
- 50+3.6961250+0.44884
- 100+2.96174100+0.35966
- 500+2.77613500+0.33712
- 1000+2.663151000+0.32340
- 2000+2.622802000+0.31850
- 4000+2.606664000+0.31654
- 国内价格
- 50+8.26659
- 100+6.40898
- 500+5.29487
- 2000+4.25307
- 国内价格
- 5+9.19765
- 50+8.26659
- 100+6.40898
- 500+5.29487
- 2000+4.25307