RBQ10RSM65BTF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
65
V
Io
10
A
IFSM
150
A
● Features
● Inner Circuit
High reliability
Power mold type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
12
Quantity(pcs)
4000
Taping Code
TL1
Marking
BQ10RSM65B
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
65
V
Reverse voltage
VR
Reverse direct voltage
65
V
Average rectified forward current
Io
60Hz half sin waveform,
resistive load,Tc=110℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,Ta=25℃
150
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
很抱歉,暂时无法提供与“RBQ10RSM65BTFTL1”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 50+8.24151
- 100+6.40035
- 500+5.28190
- 2000+4.26759
- 国内价格
- 5+9.11836
- 50+8.24151
- 100+6.40035
- 500+5.28190
- 2000+4.26759