RGS00TS65EHRC11

RGS00TS65EHR Datasheet 650V 50A Field Stop Trench IGBT lOutline VCES 650V 50A 1.65V 326W IC (100°C) VCE(sat) (Typ.) PD TO-247N (1) (2)(3) lInner Circuit (2) lFeatures 1) Low Collector - Emitter Saturation Voltage (1) Gate (2) Collector (3) Emitter *1 (1) 2) Short Circuit Withstand Time 8μs *1 Built in FRD 3) Qualified to AEC-Q101 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant (3) lPackaging Specifications Packaging lApplication General Inverter Type for Automotive and Industrial Use Tube Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS00TS65E lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 88 A TC = 100°C IC 50 A 150 A Collector Current Pulsed Collector Current Diode Forward Current ICP TC = 25°C IF 84 A TC = 100°C IF 50 A IFP*1 150 A TC = 25°C PD 326 W TC = 100°C PD 163 W Tj -40 to +175 °C Tstg -55 to +175 °C Diode Pulsed Forward Current Power Dissipation *1 Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 2019.03 - Rev.A Datasheet RGS00TS65EHR lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.46 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 0.80 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions Values Unit Min. Typ. Max. 650 - - V Tj = 25oC - - 10 μA Tj = 175oC*2 - - 5 mA VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.65 2.10 V - 2.15 - BVCES IC = 10μA, VGE = 0V VCE = 650V, VGE= 0V, Collector Cut - off Current Gate - Emitter Leakage Current Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage ICES IGES VGE(th) VCE = 5V, IC = 2.5mA IC = 50A, VGE = 15V, VCE(sat) Tj = 25°C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. Tj = 175°C 2/11 2019.03 - Rev.A Datasheet RGS00TS65EHR lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Values Conditions Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 1568 - Output Capacitance Coes VGE = 0V, - 134 - Reverse transfer Capacitance Cres f = 1MHz - 23 - Total Gate Charge Qg VCE = 300V, - 58 - Gate - Emitter Charge Qge IC = 50A, - 15 - Gate - Collector Charge Qgc VGE = 15V - 24 - Turn - on Delay Time td(on) - 36 - - 21 - - 115 - - 91 - - 1.46 - - 1.29 - - 37 - - 33 - - 145 - - 154 - - 2.00 - - 1.87 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Switching Loss Eon Turn - off Switching Loss Eoff Reverse Bias Safe Operating Area IC = 50A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 50A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 150A, VCC = 520V, RBSOA VP = 650V, VGE = 15V, FULL SQUARE - RG = 50Ω, Tj = 175oC Short Circuit Withstand Time tsc Short Circuit Withstand Time tsc*2 VCC ≤ 360V, VGE = 15V, Tj = 25oC VCC ≤ 360V, VGE = 15V, Tj = 150oC 8 - - μs 6 - - μs *2 Design assurance without measurement www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/11 2019.03 - Rev.A Datasheet RGS00TS65EHR lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.45 1.90 Tj = 175°C - 1.50 - - 113 - ns - 14.1 - A - 0.92 - μC IF = 50A, Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 275 - μJ Diode Reverse Recovery Time trr - 256 - ns Diode Peak Reverse Recovery Current Irr - 18.6 - A Diode Reverse Recovery Charge Qrr - 2.54 - μC Diode Reverse Recovery Energy Err - 565 - μJ www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. IF = 50A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C IF = 50A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C 4/11 2019.03 - Rev.A Datasheet RGS00TS65EHR lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 100 90 300 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 350 250 200 150 100 50 0 80 70 60 50 40 30 20 Tj ≤ 175ºC, VGE ≥ 15V 10 0 25 50 0 75 100 125 150 175 0 Case Temperature : TC [°C ] 75 100 125 150 175 Fig.4 Reverse Bias Safe Operating Area 200 1000 180 10μs 100 Collector Current : IC [A] Collector Current : IC [A] 50 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area 100μs 10 1 0.1 0.01 25 TC = 25ºC Single Pulse 1 10 160 140 120 100 80 60 40 Tj ≤ 175ºC, VGE = 15V 20 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 0 200 400 600 800 Collector To Emitter Voltage : VCE [V] 5/11 2019.03 - Rev.A Datasheet RGS00TS65EHR Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 150 150 Tｊ = 25ºC 125 VGE = 20V VGE = 15V VGE = 12V 100 Collector Current : IC [A] Collector Current : IC [A] lElectrical Characteristic Curves 75 VGE = 10V 50 25 0 125 75 VGE = 10V 50 25 VGE = 8V VGE = 8V 0 1 2 3 4 0 5 0 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V 60 50 40 30 20 Tj = 175ºC 10 Tj = 25ºC 0 2 4 2 6 8 10 12 4 5 14 IC = 100A 3 IC = 50A 2 IC = 25A 1 0 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3 Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 80 70 1 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Collector Current : IC [A] VGE = 20V VGE = 15V VGE = 12V 100 Collector To Emitter Voltage : VCE [V] 0 Tｊ = 175ºC 25 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/11 2019.03 - Rev.A Datasheet RGS00TS65EHR lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 100A 15 IC = 50A IC = 25A 10 5 0 5 10 15 IC = 50A IC = 25A 10 5 0 20 IC = 100A 15 5 Gate To Emitter Voltage : VGE [V] tf Switching Time [ns] Switching Time [ns] tf td(on) 10 1 0 VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 25 20 Fig.12 Typical Switching Time vs. Gate Resistance 1000 td(off) tr 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 100 10 50 75 100 td(off) td(on) tr 10 1 Collecter Current : IC [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 100 VCC = 400V, VGE = 15V, IC = 50A, Tj = 175ºC Inductive load 0 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2019.03 - Rev.A Datasheet RGS00TS65EHR lElectrical Characteristic Curves Eoff 1 Eon 0.1 0.01 VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0 25 50 75 Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 Eon 0.1 VCC = 400V, IC = 50A, VGE = 15V, Tj = 175ºC Inductive load 0.01 100 Eoff 1 0 Collecter Current : IC [A] Capacitance [pF] 1000 Coes Cres f = 1MHz, VGE = 0V, Tj = 25ºC 1 0.01 0.1 1 10 15 40 50 200V 300V 10 400V 5 IC = 50A, Tj = 25ºC 0 100 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 30 Fig.16 Typical Gate Charge Gate To Emitter Voltage : V GE [V] Cies 10 20 Gate Resistance : RG [Ω] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 100 10 0 10 20 30 40 50 60 Gate Charge : QG [nC] 8/11 2019.03 - Rev.A Datasheet RGS00TS65EHR lElectrical Characteristic Curves Fig.18 Typical Diode Revese Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] Fig.17 Typical Diode Forward Current vs. Forward Voltage 150 Forward Current : IF [A] 125 100 75 50 Tj = 175ºC 25 0 Tj = 25ºC 0 1 2 300 Tj = 175ºC 200 Tj = 25ºC 100 0 3 VCC = 400V, diF/dt = 200A/μs Inductive load 0 Reverse Recovery Current : Irr (A) Fig.19 Typical Diode Reverse Recovery 　　　　　　Current vs. Forward Current 30 25 Tj = 175ºC 20 15 Tj = 25ºC 10 5 0 VCC = 400V, diF/dt = 200A/μs Inductive load 0 25 50 75 100 Forward Current : IF [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 50 75 100 Forward Current : IF [A] Reverse Recovery Energy Losses : Err (mJ) Forward Voltage : VF [V] 25 Fig.20 Typical Diode Rrverse Recovery 　　　　　Energy Losses vs. Forward Current 1 0.9 0.8 0.7 0.6 0.5 0.4 RG = 10Ω 0.3 RG = 20Ω 0.2 VCC = 400V, Tj = 175oC Inductive load 0.1 0 0 25 RG = 50Ω 50 75 100 Forward Current : IF [A] 9/11 2019.03 - Rev.A Datasheet RGS00TS65EHR lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance 1 Transient Thrmal Impedance : Zθ(j-c) [°C/W] 0.2 0.1 0.05 0.02 D = 0.5 0.1 PDM t1 0.01 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.01 Single Pulse 0.001 1E-6 1E-5 1E-4 C1 C2 C3 R1 R2 R3 4.727m 49.61m 75.08m 254.6m 191.9m 13.50m 1E-3 1E-2 1E-1 1E+0 Pulse Width : t1 [s] Fig.22 Diode Transient Thermal Impedance 1 Transient Thrmal Impedance : Zθ(j-c) [°C/W] 0.05 0.1 0.2 D = 0.5 0.1 PDM 0.01 t1 Single Pulse t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.01 0.02 0.001 1E-6 C1 0.302m 1E-5 1E-4 C2 0.396m 1E-3 C3 2.865m 1E-2 R1 102.7m R2 197.9m 1E-1 R3 499.4m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 10/11 2019.03 - Rev.A Datasheet RGS00TS65EHR lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.23 Inductive Load Circuit IC td(on) ton trr , Qrr IF tr td(off) 10% tf toff VCE diF/dt 10% VCE(sat) Irr Eon Fig.25 Diode Reverse Recovery Waveform www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. Eoff Fig.24 Inductive Load Waveform 11/11 2019.03 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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