RGS00TS65DHRC11

RGS00TS65D Data Sheet 650V 50A Field Stop Trench IGBT lOutline VCES 650V IC(100°C) 50A VCE(sat) (Typ.) 1.65V PD 326W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) Short Circuit Withstand Time 8μs (1) Gate (2) Collector (3) Emitter *1 3) Qualified to AEC-Q101 (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications lApplications Packaging General Inverter Reel Size (mm) - Tape Width (mm) - for Automotive and Industrial Use Tube Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS00TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 88 A TC = 100°C IC 50 A ICP*1 150 A TC = 25°C IF 56 A TC = 100°C IF 30 A IFP*1 150 A TC = 25°C PD 326 W TC = 100°C PD 163 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.07 - Rev.A Data Sheet RGS00TS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.46 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.17 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol Conditions Unit Min. Typ. Max. 650 - - V Tj = 25°C - - 10 μA Tj = 175°C - - 5 mA IGES VGE = 30V, VCE = 0V - - ±200 nA VGE(th) VCE = 5V, IC = 2.5mA 5.0 6.0 7.0 V Tj = 25°C - 1.65 2.10 V Tj = 175°C - 2.15 - BVCES IC = 10μA, VGE = 0V VCE = 650V, VGE = 0V Collector Cut - off Current Gate - Emitter Leakage Current Gate - Emitter Threshold Voltage ICES IC = 50A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/11 2016.07 - Rev.A Data Sheet RGS00TS65D lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1568 - Output Capacitance Coes VGE = 0V - 134 - Reverse Transfer Capacitance Cres f = 1MHz - 23 - Total Gate Charge Qg VCE = 300V - 58 - Gate - Emitter Charge Qge IC = 50A - 15 - Gate - Collector Charge Qgc VGE = 15V - 24 - Turn - on Delay Time td(on) IC = 50A, VCC = 400V - 36 - tr VGE = 15V, RG = 10Ω - 21 - Tj = 25°C - 115 - Inductive Load - 91 - Rise Time pF nC ns Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 1.46 - Turn - off Switching Loss Eoff reverse recovery - 1.29 - Turn - on Delay Time td(on) IC = 50A, VCC = 400V - 37 - tr VGE = 15V, RG = 10Ω - 33 - Tj = 175°C - 145 - Inductive Load - 147 - mJ Rise Time ns Turn - off Delay Time Fall Time td(off) tf Turn - on Switching Loss Eon *Eon includes diode - 1.97 - Turn - off Switching Loss Eoff reverse recovery - 1.85 - mJ IC = 150A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 50Ω, Tj = 175°C Short Circuit Withstand Time Short Circuit Withstand Time tsc tsc*2 VCC ≦ 360V 8 - - μs 6 - - μs VGE = 15V, Tj = 25°C VCC ≦ 360V VGE = 15V, Tj = 150°C *2 Design assurance without measurement www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/11 2016.07 - Rev.A Data Sheet RGS00TS65D lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Tj = 25°C - 1.45 1.90 Tj = 175°C - 1.55 - - 103 - ns - 7.1 - A - 0.4 - μC IF = 30A Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 15 - μJ Diode Reverse Recovery Time trr - 242 - ns Diode Peak Reverse Recovery Current Irr - 9.8 - A Diode Reverse Recovery Charge Qrr - 1.3 - μC Diode Reverse Recovery Energy Err - 113 - μJ www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. IF = 30A VCC = 400V diF/dt = 200A/μs Tj = 25°C IF = 30A VCC = 400V diF/dt = 200A/μs Tj = 175°C 4/11 2016.07 - Rev.A Data Sheet RGS00TS65D lElectrical Characteristic Curves 340 320 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 Fig.2 Collector Current vs. Case Temperature 100 90 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 80 70 60 50 40 30 　20 Tj≦175ºC VGE≧15V 10 0 0 25 50 75 100 125 150 175 0 Case Temperature : TC [ºC] 50 75 100 125 150 175 Case Temperature : TC [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 160 1000 10µs 140 100 10 Collector Current : IC [A] Collector Current : IC [A] 25 100µs 1 0.1 TC= 25ºC Single Pulse 120 100 80 60 40 Tj≦175ºC VGE=15V 20 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2016.07 - Rev.A Data Sheet RGS00TS65D lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 150 150 Tj= 25ºC VGE= 12V VGE= 20V 120 105 Tj= 175ºC 135 Collector Current : IC [A] Collector Current : IC [A] 135 VGE= 15V 90 75 VGE= 10V 60 45 30 105 VGE= 8V 15 VGE= 20V 120 VGE= 15V 90 VGE= 12V 75 VGE= 10V 60 45 30 VGE= 8V 15 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE[V] 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 Collector To Emitter Saturation Voltage : VCE(sat) [V] 80 VCE= 10V 70 Collector Current : IC [A] 1 60 50 40 30 20 Tj= 175ºC 10 Tj= 25ºC 0 0 2 4 6 8 10 12 3 IC= 100A IC= 50A 2 IC= 25A 1 0 25 14 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. VGE= 15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 6/11 2016.07 - Rev.A Data Sheet RGS00TS65D lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 20 Tj= 25ºC 15 IC= 100A IC= 50A 10 IC= 25A 5 0 5 10 15 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj= 175ºC IC= 100A 15 IC= 50A 10 IC= 25A 5 0 5 20 Gate To Emitter Voltage : VGE [V] 10 15 20 Gate To Emitter Voltage : VGE [V] Fig.12 Typical Switching Time vs. Gate Resistance Fig.11 Typical Switching Time vs. Collector Current 1000 1000 Switching Time [ns] Switching Time [ns] td(off) tf 100 td(on) 10 tr tf 100 td(off) td(on) tr 10 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive ｌoad 1 1 0 10 20 30 40 50 60 70 80 0 Collector Current : IC [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 7/11 2016.07 - Rev.A Data Sheet RGS00TS65D lElectrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 Eoff 1 Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive ｌoad Eon Eoff 1 0.1 VCC=400V, IC=50A VGE=15V, Tj=175ºC Inductive ｌoad 0.01 0.01 0 10 20 30 40 50 60 70 0 80 10 Collector Current : IC [A] 30 40 50 Gate Resistance : RG [Ω] Fig.16 Typical Gate Charge Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 15 Cies 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate To Emitter Voltage : VGE [V] 10000 Capacitance [pF] 20 200V 300V 10 400V 5 IC=50A Tj=25ºC 0 0.1 1 10 0 100 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 Gate Charge : Qg [nC] 8/11 2016.07 - Rev.A Data Sheet RGS00TS65D lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 150 120 90 60 30 Tj= 175ºC 300 Tj= 175ºC 200 Tj= 25ºC 100 VCC=400V diF/dt=200A/µs Inductive ｌoad Tj= 25ºC 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 10 Forward Voltage : VF[V] 15 Tj= 175ºC 10 5 VCC=400V diF/dt=200A/µs Inductive ｌoad 0 10 20 30 40 50 50 60 0.6 RG=10Ω VCC=400V Tj= 175ºC Inductive ｌoad 0.5 0.4 RG=20Ω 0.3 RG=50Ω 0.2 0.1 0 0 60 Forward Current : IF [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 40 Fig.20 Typical Diode Reverse Recovery Energy Losses vs. Forward Current Reverse Recovery Energy Losses : Err [mJ] Reverse Recovery Current : Irr [A] 20 0 30 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Tj= 25ºC 20 10 20 30 40 50 60 Forward Current : IF [A] 9/11 2016.07 - Rev.A Data Sheet RGS00TS65D lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 1 0.1 0.2 D= 0.5 PDM 0.1 t1 Single Pulse 0.01 0.05 0.02 0.01 0.0001 0.001 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC C1 C2 C3 R1 R2 R3 4.727m 49.61m 75.08m 254.6m 191.9m 13.50m 0.01 0.1 1 Pulse Width : t1[s] Fig.22 Diode Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 0.1 0.2 D= 0.5 1 PDM 0.1 0.01 Single Pulse t1 0.02 0.05 0.01 0.0001 C1 C2 C3 R1 R2 R3 1.266m 10.51m 49.06m 492.7m 364.8m 312.7m 0.001 0.01 0.1 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 1 Pulse Width : t1[s] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10/11 2016.07 - Rev.A Data Sheet RGS00TS65D lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE D.U.T. 10% VG 90% IC Fig.23 Inductive Load Circuit 10% td(on) tr ton IF trr , Qrr td(off) tf toff VCE diF/dt 10% Irr Eon Fig.25 Diode Reverce Recovery Waveform www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 11/11 Eoff VCE(sat) Fig.24 Inductive Load Waveform 2016.07 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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