RGSX5TS65DHRC11

RGSX5TS65DHR Datasheet 650V 75A Field Stop Trench IGBT lOutline VCES 650V 75A 1.7V 404W IC (100°C) VCE(sat) (Typ.) PD TO-247N (1) (2)(3) lInner Circuit (2) lFeatures 1) Low Collector - Emitter Saturation Voltage (1) Gate (2) Collector (3) Emitter *1 (1) 2) Short Circuit Withstand Time 8μs 3) Qualified to AEC-Q101 (3) *1 Built in FRD 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications Packaging lApplication General Inverter Type for Automotive and Industrial Use Tube Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGSX5TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 114 A TC = 100°C IC 75 A ICP*1 225 A TC = 25°C IF 84 A TC = 100°C IF 50 A IFP*1 225 A TC = 25°C PD 404 W TC = 100°C PD 202 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 1/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.37 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 0.80 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions Values Unit Min. Typ. Max. 650 - - V Tj = 25℃ - - 10 μA Tj = 175℃*2 - - 5 mA VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.70 2.15 V - 2.20 - V BVCES IC = 10μA, VGE = 0V VCE = 650V, VGE= 0V Collector Cut - off Current Gate - Emitter Leakage Current Gate - Emitter Threshold Voltage ICES IGES VGE(th) VCE = 5V, IC = 3.5mA IC = 75A, VGE = 15V Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 2/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Values Conditions Min. Typ. Max. Input Capacitance Cies VCE = 30V - 2320 - Output Capacitance Coes VGE = 0V - 168 - Reverse transfer Capacitance Cres f = 1MHz - 23 - Total Gate Charge Qg VCE = 300V - 79 - Gate - Emitter Charge Qge IC = 75A - 21 - Gate - Collector Charge Qgc VGE = 15V - 33 - Turn - on Delay Time td(on) - 43 - - 40 - - 113 - - 87 - - 3.32 - - 1.90 - - 42 - - 45 - - 135 - - 137 - - 3.58 - - 2.58 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn-on Switching Loss Eon Turn-off Switching Loss Eoff Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn-on Switching Loss Eon Turn-off Switching Loss Eoff IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery Unit pF nC ns mJ ns mJ IC = 225A, VCC = 520V Reverse Bias Safe Operating Area RBSOA Vp = 650V, VGE = 15V FULL SQUARE - RG = 50Ω, Tj = 175°C Short Circuit Withstand Time tsc VCC ≤ 360V VGE = 15V, Tj = 25°C 8 - - μs Short Circuit Withstand Time tsc*2 VCC ≤ 360V VGE = 15V, Tj = 150°C 6 - - μs *2 Design assurance without measurement www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 3/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.45 1.90 Tj = 175°C - 1.55 - - 114 - ns - 8.5 - A - 0.57 - μC IF = 50A Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 22 - μJ Diode Reverse Recovery Time trr - 291 - ns Diode Peak Reverse Recovery Current Irr - 12 - A Diode Reverse Recovery Charge Qrr - 1.93 - μC Diode Reverse Recovery Energy Err - 158 - μJ www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. IF = 50A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C IF = 50A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C 4/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 150 125 400 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 500 300 200 100 100 75 50 25 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 25 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 300 1000 250 100 10 Collector Current : IC [A] Collector Current : IC [A] 10μs 100μs 1 0.1 200 150 100 50 TC = 25ºC Single Pulse Tj ≤ 175ºC VGE = 15V 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 5/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 225 225 Tｊ = 25ºC VGE = 20V 175 VGE = 12V VGE = 15V 150 Tｊ = 175ºC 200 Collector Current : IC [A] Collector Current : IC [A] 200 125 100 VGE = 10V 75 50 VGE = 8V 25 175 VGE = 20V 150 VGE = 15V 125 VGE = 12V 100 VGE = 10V 75 50 VGE = 8V 25 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 2 3 4 5 Fig.8 Typical Collector to Emitter Saturation Voltage vs. Junction Temperature 5 Fig.7 Typical Transfer Characteristics 75 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V Collector Current : IC [A] 1 Collector To Emitter Voltage : VCE [V] 60 45 30 15 Tj = 175ºC Tj = 25ºC 0 IC = 150A 4 3 IC = 75A 2 IC = 37.5A 1 0 0 2 4 6 8 10 12 25 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR lElectrical Characteristic Curves Fig.9 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Fig.10 Typical Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 150A 15 IC = 75A IC = 37.5A 10 5 0 IC = 150A 15 IC = 75A IC = 37.5A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 10 15 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 Fig.12 Typical Switching Time vs. Gate Resistance 1000 Switching Time [ns] Switching Time [ns] td(off) tf 100 td(on) 10 tr tf 100 td(off) ｔd(on) VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, VGE = 15V, IC = 75A, Tj = 175ºC Inductive load tr 1 10 0 25 50 75 100 125 150 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10 7/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR lElectrical Characteristic Curves Fig.14 Typical Switching Energy Losses vs. Gate Resistance 100 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 100 Eon 10 Eoff 1 VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.1 Eon 10 Eoff 1 VCC = 400V, VGE = 15V, IC = 75A, Tj = 175ºC Inductive load 0.1 0 25 50 75 100 125 150 0 Fig.15 Typical Capacitance vs. Collector Emitter to Voltage 10000 Capacitance [pF] 1000 Coes 100 1 0.01 30 40 50 Cres Fig.16 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Cies f = 1MHz VGE = 0V Tj = 25ºC 20 Gate Resistance : RG [Ω] Collector Current : IC [A] 10 10 VCC = 300V VCC = 200V 10 VCC = 400V 5 IC = 75A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 15 30 45 60 75 90 Gate Charge : QG [nQ] 8/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage 225 Fig.18 Typical Diode Reverce Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr[ns] Forward Current : IF [A] 200 175 150 125 100 75 50 Tj = 175ºC 25 Tj = 25ºC 0 0 0.5 1 1.5 300 Tj = 175ºC 200 100 0 2 2.5 3 0 Forward Voltage : VF [V] 50 75 100 Fig.20 Typical Diode Reverse Recovery Energy Losses vs. Forward Current 2 Reverse Recovery Energy Losses : Err [mJ] Reverse Recovery Current : Irr [A] 20 15 Tj = 175ºC 10 VCC = 400V diF/dt = 200A/μs Inductive load Tj = 25ºC 25 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current 25 5 VCC = 400V diF/dt = 200A/μs Inductive load Tj = 25ºC 0 VCC = 400V Tj = 175℃ Inductive load 1.5 RG = 10Ω RG = 20Ω 1 RG = 50Ω 0.5 0 0 25 50 75 100 0 Forward Current : IF [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 25 50 75 100 Forward Current : IF [A] 9/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 D = 0.5 0.2 0.1 0.1 PDM Single Pulse t1 0.01 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.01 0.02 C1 666.5u 0.05 0.001 1E-6 1E-5 1E-4 C2 2.774m 1E-3 C3 16.73m R1 64.72m 1E-2 R2 168.9m 1E-1 R3 136.4m 1E+0 Pulse Width : t1 [s] Fig.22 Diode Transient Thermal Impedance 1 Transient Thermal Impedance : Zθ(j-c) [°C/W] 0.1 D = 0.5 0.2 0.1 PDM Single Pulse 0.01 t1 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.01 0.02 C1 302.1u 0.05 0.001 1E-6 1E-5 1E-4 C2 396.3u 1E-3 C3 2.865m 1E-2 R1 102.7m R2 197.9m 1E-1 R3 499.4m 1E+0 Pulse Width : t1 [s] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. 10/11 2021.01 - Rev.A Datasheet RGSX5TS65DHR ●Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.23 Inductive Load Circuit IC td(on) trr , Qrr IF tr ton diF/dt td(off) 10% tf toff VCE 10% Irr Eon Fig.24 Diode Reverce Recovery Waveform www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.25 Inductive Load Waveform 11/11 2021.01 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001