RGS80TSX2DHRC11

RGS80TSX2DHR Datasheet 1200V 40A Field Stop Trench IGBT lOutline VCES 1200V 40A 1.7V 555W IC (100°C) VCE(sat) (Typ.) PD TO-247N (1) (2)(3) lInner Circuit (2) lFeatures 1) Low Collector - Emitter Saturation Voltage (1) Gate (2) Collector (3) Emitter *1 (1) 2) Short Circuit Withstand Time 10μs *1 Built in FRD 3) Qualified to AEC-Q101 (3) 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications Packaging lApplication Tube Reel Size (mm) - Tape Width (mm) - General Inverter for Automotive and Industrial Use Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGS80TSX2D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 1200 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 80 A TC = 100°C IC 40 A ICP*1 120 A TC = 25°C IF 80 A TC = 100°C IF 40 A IFP*1 120 A TC = 25°C PD 555 W TC = 100°C PD 277 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.27 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 0.56 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25℃ - - 10 μA Tj = 175℃ - 3 - mA VGE = ±30V, VCE = 0V - - ±500 nA 5.0 6.0 7.0 V - 1.70 2.10 V - 2.20 - V BVCES IC = 10μA, VGE = 0V VCE = 1200V, VGE= 0V Collector Cut - off Current Gate - Emitter Leakage Current Gate - Emitter Threshold Voltage ICES IGES VGE(th) VCE = 5V, IC = 6.1mA IC = 40A, VGE = 15V Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 2/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V - 2820 - Output Capacitance Coes VGE = 0V - 161 - Reverse transfer Capacitance Cres f = 1MHz - 25 - Total Gate Charge Qg VCE = 500V - 104 - Gate - Emitter Charge Qge IC = 40A - 25 - Gate - Collector Charge Qgc VGE = 15V - 42 - Turn - on Delay Time td(on) - 49 - - 27 - - 199 - - 227 - - 3.00 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time IC = 40A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load *Eon include diode reverse recovery Eon Turn-off Switching Loss Eoff - 3.10 - Turn - on Delay Time td(on) - 49 - - 40 - - 258 - - 371 - - 3.80 - - 4.50 - tr Turn - off Delay Time td(off) tf Fall Time Turn-on Switching Loss Eon Turn-off Switching Loss Eoff IC = 40A, VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load *Eon include diode reverse recovery nC ns Turn-on Switching Loss Rise Time pF mJ ns mJ IC = 120A, VCC = 1050V Reverse Bias Safe Operating Area RBSOA Vp = 1200V, VGE = 15V FULL SQUARE - RG = 50Ω, Tj = 175°C Short Circuit Withstand Time tsc VCC ≤ 600V VGE = 15V, Tj = 25°C 10 - - μs Short Circuit Withstand Time tsc*2 VCC ≤ 600V VGE = 15V, Tj = 150°C 8 - - μs *2 Design assurance without measurement www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 3/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Tj = 25°C - 1.65 2.10 Tj = 175°C - 1.85 - - 198 - ns - 21.7 - A - 2.5 - μC IF = 40A Diode Forward Voltage VF V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Energy Err - 568 - μJ Diode Reverse Recovery Time trr - 337 - ns Diode Peak Reverse Recovery Current Irr - 29.1 - A Diode Reverse Recovery Charge Qrr - 5.9 - μC Diode Reverse Recovery Energy Err - 1708 - μJ www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. IF = 40A VCC = 600V diF/dt = 500A/μs Tj = 25°C IF = 40A VCC = 600V diF/dt = 500A/μs Tj = 175°C 4/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 100 500 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 600 400 300 200 100 80 60 40 20 Tj ≤ 175ºC VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 140 1000 120 10μs 100 Collector Current : IC [A] Collector Current : IC [A] 25 100μs 10 1 0.1 100 80 60 40 20 TC = 25ºC Single Pulse Tj ≤ 175ºC VGE = 15V 0 0.01 1 10 100 1000 10000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 0 400 800 1200 1600 Collector To Emitter Voltage : VCE [V] 5/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 80 80 VGE = 15V Tｊ = 25ºC Tｊ = 175ºC 70 VGE = 20V VGE = 12V 60 50 Collector Current : IC [A] Collector Current : IC [A] 70 VGE = 10V 40 30 20 VGE = 8V 10 VGE = 20V 60 50 40 VGE = 10V 30 20 VGE = 8V 10 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 60 50 40 30 20 Tj = 175ºC 3 4 5 IC = 80A VGE = 15V VCE = 10V 10 2 Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 80 70 1 Collector To Emitter Voltage : VCE [V] Fig.7 Typical Transfer Characteristics Collector Current : IC [A] VGE = 12V VGE = 15V Tj = 25ºC 0 3 IC = 40A 2 IC = 20A 1 0 0 2 4 6 8 10 12 14 25 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 10 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC 8 IC = 80A 6 IC = 40A IC = 20A 4 2 0 8 IC = 80A IC = 40A 6 IC = 20A 4 2 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 20 Fig.12 Typical Switching Time vs. Gate Resistance 1000 tf tf td(off) td(off) Switching Time [ns] Switching Time [ns] 15 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 100 td(on) 10 10 tr 100 td(on) tr 10 VCC = 600V, IC = 40A, VGE = 15V, Tj = 175ºC Inductive load VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 1 1 0 0 10 20 30 40 50 60 70 80 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 7/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR lElectrical Characteristic Curves Fig.14 Typical Switching Energy Losses vs. Gate Resistance 100 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 100 Eon 10 Eoff 1 VCC = 600V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.1 Eon 10 Eoff 1 VCC = 600V, VGE = 15V, IC = 40A, Tj = 175ºC Inductive load 0.1 0 10 20 30 40 50 60 70 80 0 Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 1000 Capacitance [pF] 30 40 50 Coes 100 10 Cres Fig.16 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Cies 1 0.01 20 Gate Resistance : RG [Ω] Collector Current : IC [A] f = 1MHz VGE = 0V Tj = 25ºC 10 VCC = 300V 10 VCC = 500V 5 IC = 40A Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 30 60 90 120 Gate Charge : QG [nQ] 8/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR lElectrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage 80 Fig.18 Typical Diode Reverce Recovery Time vs. Forward Current 500 Reverse Recovery Time : trr [ns] Forward Current : IF [A] 70 60 50 40 30 20 Tj = 175ºC 10 Tj = 25ºC 0 400 Tj = 175ºC 300 200 Tj = 25ºC 100 0 0 0.5 1 1.5 2 2.5 3 0 Forward Voltage : VF [V] Tj = 175ºC 30 25 20 15 Tj = 25ºC 10 VCC = 600V diF/dt = 500A/μs Inductive load 5 Fig.20 Typical Diode Reverse Recovery Energy Losses vs. Forward Current 4 Reverse Recovery Energy Losses : Err [mJ] 35 10 20 30 40 50 60 70 80 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current 40 Reverse Recovery Current : Irr [A] VCC = 600V diF/dt = 500A/μs Inductive load 0 VCC = 600V Tj = 175℃ Inductive load 3.5 RG = 10Ω 3 2.5 RG = 30Ω 2 1.5 RG = 50Ω 1 0.5 0 0 10 20 30 40 50 60 70 80 0 Forward Current : IF [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 70 80 Forward Current : IF [A] 9/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 D = 0.5 0.2 0.1 0.1 PDM t1 Single Pulse 0.01 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.01 0.02 0.05 C1 1.939m 0.001 1E-5 1E-4 C2 3.166m 1E-3 C3 R1 R2 R3 20.576m 43.129m 53.597m 173.284m 1E-2 1E-1 1E+0 Pulse Width : t1 [s] Fig.22 Diode Transient Thermal Impedance Transient Thermal Impedance : Zθ(j-c) [°C/W] 1 D = 0.5 0.1 0.2 0.1 PDM Single Pulse 0.01 t1 0.02 0.01 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.05 0.001 1E-5 1E-4 C1 C2 C3 722.93u 4.09m 48.15m 1E-3 1E-2 R1 R2 R3 109.37m 262.68m 187.98m 1E-1 1E+0 Pulse Width : t1 [s] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 10/11 2020.09 - Rev.C Datasheet RGS80TSX2DHR ●Inductive Load Switching Circuit and Waveform D.U.T. Gate Drive Time D.U.T. 90% VGE VG 10% Fig.23 Inductive Load Circuit 90% IC td(on) tr trr , Qrr IF ton td(off) 10% tf toff VCE diF/dt 10% Irr Eon Fig.24 Diode Reverce Recovery Waveform www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. Eoff VCE(sat) Fig.25 Inductive Load Waveform 11/11 2020.09 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001