SCT3030ALHRC11

SCT3030ALHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline VDSS RDS(on) (Typ.) ID*1 PD 650V 30mΩ 70A 262W TO-247N (1) (2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Qualified to AEC-Q101 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lPackaging specifications lApplication Packing ・Automobile Reel size (mm) - Tape width (mm) - ・Switch mode power supplies Type Tube Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3030AL lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 650 V Tc = 25°C ID *1 70 A Tc = 100°C ID *1 49 A ID,pulse *2 175 A -4 to +22 V -4 to +26 V VGS_op*4 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Drain - Source Voltage Continuous Drain current Pulsed Drain current VGSS Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300nsec) VGSS_surge Recommended drive voltage Junction temperature Range of storage temperature www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 *3 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Drain - Source breakdown voltage Values Conditions Min. Typ. Max. V(BR)DSS Tj = 25°C 650 - - Tj = -55°C 650 - - Tj = 25°C - 1 10 Tj = 150°C - 2 - Unit VGS = 0V, ID = 1mA V VGS = 0V, VDS =650V Zero Gate voltage Drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V - - -100 nA 2.7 - 5.6 V - 30 39 mΩ Tj = 150°C - 43 - f = 1MHz, open drain - 7 - , VDS = 0V VGS (th) VDS = 10V, ID = 13.3mA Gate threshold voltage μA VGS = 18V, ID = 27A Static Drain - Source on - state resistance RDS(on) *5 Tj = 25°C RG Gate input resistance Ω lThermal resistance Parameter Symbol RthJC Thermal resistance, junction - case Values Min. Typ. Max. - 0.44 0.57 Unit °C/W lTypical Transient Thermal Characteristics Symbol Value Rth1 2.56E-02 Rth2 1.95E-01 Rth3 2.20E-01 Unit K/W Tj PD Value Cth1 1.39E-03 Cth2 1.00E-02 Cth3 3.57E-02 Rth,n Rth1 Cth1 Symbol Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 27A - 9.4 - Input capacitance Ciss VGS = 0V - 1526 - Output capacitance Coss VDS = 500V - 89 - Reverse transfer capacitance Crss f = 1MHz - 42 - Effective output capacitance, energy related Co(er) - 230 - Total Gate charge Qg *5 - 104 - - 19 - - 55 - - 22 - VGS = 0V/+18V - 41 - RG = 0Ω - 48 - - 27 - - 168 - *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 Rise time Turn - off delay time Fall time tr *5 td(off) *5 tf *5 VGS = 0V VDS = 0V to 300V VDS = 300V ID = 27A VGS = 18V See Fig. 1-1. VDS = 300V ID = 18A RL = 17Ω See Fig. 1-1, 1-2. Unit S pF pF nC ns VDS = 300V Turn - on switching loss Eon *5 VGS=0V/18V, ID = 27A RG = 0Ω, L = 250μH Turn - off switching loss www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff *5 Eon includes diode reverse recovery Lσ = 50nH, Cσ = 200pF See Fig. 2-1, 2-2. 3/12 μJ - 112 - TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Body diode continuous, forward current IS *1 Body diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 Conditions Values Unit Min. Typ. Max. - - 70 A - - 175 A - 3.2 - V - 26 - ns di/dt = 1100A/μs - 130 - nC Lσ = 50nH, Cσ = 200pF See Fig. 3-1, 3-2. - 10 - A Tc = 25°C VGS = 0V, ID = 27A IF = 27A VR = 300V *1 Limited by maximum temperature allowed. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 Operation in this area is limited by RDS(on) 250 Drain Current : ID [A] Power Dissipation : PD [W] 300 200 150 100 100 25 75 125 0.1 175 Case Temperature : TC [°C] PW = 10μs* PW = 100μs PW = 1ms PW = 10ms 1 50 0 PW = 1μs* 10 Ta = 25ºC Single Pulse *Calculation(PW10μs) 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : RthJC [K/W] 1 0.1 0.01 0.001 Ta = 25ºC Single Pulse 0.0001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 Pulse Width : PW [s] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 35 70 20V 50 18V 14V 16V 12V 40 30 20 10V 10 0 2 4 6 8 25 14V 18V 16V Ta = 25ºC Pulsed 12V 20 15 10V 10 VGS= 8V 5 VGS= 8V 0 20V 30 Drain Current : ID [A] Drain Current : ID [A] 60 Ta = 25ºC Pulsed 0 10 Drain - Source Voltage : VDS [V] 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 25ºC 3rd Quadrant Characteristics 0 Ta = 25ºC Pulsed Drain Current : ID [A] -10 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -20 -30 -40 -50 -60 -70 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lElectrical characteristic curves Fig.7 Tj = 150ºC Typical Output Characteristics(I) 20V Drain Current : ID [A] 60 14V 18V 16V 50 12V 10V 40 30 20 VGS= 8V 10 0 2 4 6 8 16V 25 VGS= 8V 10 Ta = 150ºC Pulsed 0 -40 -50 -60 -70 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2 3 4 5 Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage Body Diode Forward Voltage : VSD [V] Drain Current : ID [A] VGS = -4V VGS = -2V VGS = 0V VGS = 18V -30 1 Drain - Source Voltage : VDS [V] Ta = 150ºC Pulsed -20 10V 15 0 10 Fig.9 Tj = 150ºC 3rd Quadrant Characteristics -10 12V 20 Drain - Source Voltage : VDS [V] 0 14V 5 Ta = 150ºC Pulsed 0 20V 18V 30 Drain Current : ID [A] 70 Fig.8 Tj = 150ºC Typical Output Characteristics(II) 35 6 ID=27A 5 4 3 2 Ta= 150ºC 1 0 Ta= 25ºC -4 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 70 100 VDS = 10V Pulsed 60 10 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 50 40 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 30 20 10 0.01 0 2 4 6 0 8 10 12 14 16 18 20 0 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Fig.14 Transconductance vs. Drain Current 6 10 VDS = 10V ID = 13.3mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature 4 3 2 1 0 2 -50 0 50 100 150 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 VDS = 10V Pulsed 0.1 1 10 Drain Current : ID [A] 8/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.06 Ta = 25ºC Pulsed 0.10 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.12 ID= 47A 0.08 0.06 ID= 27A 0.04 ID= -27A 0.02 0.00 8 10 12 14 16 18 20 0.05 0.04 ID= 27A ID= -27A 0.02 0.01 -50 Gate - Source Voltage : VGS [V] Normalized Drain - Source Breakdown Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] 1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 10 100 150 200 1.03 1.02 1.01 1.00 0.99 0.98 100 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 50 Fig.18 Normalized Drain - Source Breakdown Voltage vs. Junction Temperature 1.04 0.1 0.01 0 Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current VGS = 18V Pulsed ID= 47A 0.03 0.00 22 VGS = 18V Pulsed -50 0 50 100 150 200 Junction Temperature : Tj [ºC] 9/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 10000 20 Ta = 25ºC Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Ciss 1000 Coss 100 Crss 10 1 Ta = 25ºC f = 1MHz VGS = 0V 0.1 1 10 100 15 10 5 0 1000 Drain - Source Voltage : VDS [V] 0 100 200 300 400 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Ta = 25ºC VDD = 300V ID = 27A Pulsed 15 10 5 0 0 20 40 60 80 100 120 Total Gate Charge : Qg [nC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lElectrical characteristic curves Switching Time : t [ns] 1000 Ta = VDD= VGS= RG = tf 100 td(off) Fig.20 Typical Switching Loss 　　　　　vs. Drain - Source Voltage 400 25°C 300V +18V/0V 0Ω tr td(on) 10 Ta = ID = VGS= RG = L= 350 Switching Energy : E [µJ] Fig.19 Typical Switching Time 　　　　　vs. Drain Current 10000 300 25°C 27A +18V/0V 0Ω 250μH 250 200 Eon 150 100 Eoff 50 1 0.1 1 10 0 100 100 300 400 Fig.21 Typical Switching Loss 　　　　　vs. Drain Current Fig.22 Typical Switching Loss 　　　　　vs. External Gate Resistance 1200 1200 Ta = VDD= VGS= RG = L= 1000 800 25°C 300V +18V/0V 0Ω 250μH 600 Eon 400 Eoff 200 0 0 Drain Current : ID [A] Ta = ID = VDD= VGS= L= 1000 800 25°C 27A 300V +18V/0V 250μH Eon 600 Eoff 400 200 0 10 20 30 40 50 60 70 80 www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 500 Drain - Source Voltage : VDS [V] Switching Energy : E [µJ] Switching Energy : E [µJ] Drain Current : ID [A] 200 0 5 10 15 20 25 30 External Gate Resistance : RG [Ω] 11/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 SCT3030ALHR Datasheet lMeasurement circuits and waveforms Fig.1-1 Gate Charge and Switching Time Measurement Circuit Fig.1-2 Waveforms for Switching Time Fig.2-1 Switching Energy Measurement Circuit Fig.2-2 Waveforms for Switching Energy Loss Eon = ID ∙ VDS dt VDS Eoff = ID ∙ VDS dt Vsurge Irr ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Fig.3-2 Reverse Recovery Waveform 12/12 TSQ50211-SCT3030ALHR 16.Nov.2018 - Rev.003 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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