SCT3030AW7TL

SCT3030AW7 Datasheet N-channel SiC power MOSFET lOutline VDSS 650V RDS(on) (Typ.) 30mΩ *1 TO-263-7L 70A ID PD 267W lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications lApplication Packing ・Solar inverters Reel size (mm) 330 Tape width (mm) 24 ・DC/DC converters Embossed tape Type ・Switch mode power supplies Basic ordering unit (pcs) ・Induction heating Taping code ・Motor drives Marking 1000 TL SCT3030AW7 lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Value Unit VDSS 650 V Tc = 25°C ID *1 70 A Tc = 100°C ID *1 50 A 175 A -4 to +22 V -4 to +26 V Drain - Source Voltage Continuous Drain current Pulsed Drain current (Tc = 25°C) ID,pulse *2 VGSS Gate - Source voltage (DC) *3 Gate - Source surge voltage (tsurge < 300ns) VGSS_surge Recommended drive voltage VGS_op*4 0 / +18 V Virtual Junction temperature Tvj 175 °C Range of storage temperature Tstg -55 to +175 °C www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. V(BR)DSS Tvj = 25°C 650 - - Tvj = -55°C 650 - - Tvj = 25°C - 1 10 Tvj = 150°C - 2 - VGS = 0V, ID = 1mA Drain - Source breakdown voltage V VGS = 0V, VDS =650V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, - - -100 nA 2.7 - 5.6 V - 30 39 mΩ Tvj = 150°C - 43 - f = 1MHz, open drain - 7 - VDS = 0V VGS (th) VDS = 10V, ID = 13.3mA Gate threshold voltage VGS = 18V, ID = 27A Static Drain - Source on - state resistance RDS(on) *5 Tvj = 25°C RG Gate input resistance Ω lThermal resistance Values Parameter Symbol Thermal resistance, junction - case *6 RthJC Unit Min. Typ. Max. - 0.44 0.56 K/W lTypical Transient Thermal Characteristics Symbol Value Unit Rth1 4.06×10 -2 Rth2 6.86×10 -2 Rth3 3.31×10 -1 K/W Tj PD Symbol Cth2 Unit Cth1 7.06×10 -3 Cth2 2.59×10 -2 Cth3 2.77×10 -2 Rth,n Rth1 Cth1 Value Ws/K Tc Cth,n Ta www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 27A - 9.4 - Input capacitance Ciss VGS = 0V - 1526 - Output capacitance Coss VDS = 500V - 89 - Reverse transfer capacitance Crss f = 1MHz - 42 - Effective output capacitance, energy related Co(er) - 230 - Total Gate charge Qg *5 - 104 - - 19 - - 55 - - 7 - - 22 - VGS = 0V VDS = 0V to 300V VDS = 300V S pF pF ID = 27A *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 VGS = 18V See Fig. 1-1. VDS = 400V nC ID = 27A Rise time Turn - off delay time tr *5 VGS = 0V/+18V td(off) *5 RG = 0Ω, L = 750μH ns - 27 - See Fig. 2-1, 2-2, 2-3. - 21 - Eon includes diode reverse recovery. - 159 - Lσ = 50nH, Cσ = 10pF Fall time tf *5 Turn - on switching loss Eon *5 Turn - off switching loss *5 www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff μJ - 3/15 87 - TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Body diode continuous, forward current Conditions IS *1 Unit Min. Typ. Max. - - 70 A - - 175 A Tc = 25°C Body diode direct current, pulsed ISM Forward voltage VSD *5 VGS = 0V, IS = 27A - 3.2 - V IF = 27A - 28 - ns di/dt = 2500A/μs - 702 - nC Lσ = 50nH, Cσ = 10pF See Fig. 3-1, 3-2. - 40 - A Reverse recovery time *2 trr *5 VR = 400V *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 *1 Limited by maximum Tvj and for Max. RthJC. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed *6 The case mentioned in this parameter is the bottom of leadframe located underneath the chip. Actual value of the Rth(j-c) is influenced by user's application design. The described value is only vaild at the specific conditions such as JESD51-14. www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 300 250 Drain Current : ID [A] Power Dissipation : PD [W] Operation in this area is limited by RDS(on) 200 150 100 100 PW = 1μs* 10 PW = 10μs* PW = 100μs PW = 1ms PW = 10ms 1 50 Tc = 25ºC Single Pulse *Calculation(PW10μs) 0 0.1 25 75 125 175 0.1 Case Temperature : TC [°C] 1 10 100 1000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Impedance vs. Pulse Width Transient Thermal Impedance : ZthJC [K/W] 1 0.1 0.01 0.001 Tc = 25ºC Single Pulse 0.0001 0.00001 0.001 0.1 Pulse Width : PW [s] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 35 70 20V 20V 50 18V 30 14V 16V Drain Current : ID [A] Drain Current : ID [A] 60 Tvj = 25ºC Pulsed 12V 40 30 20 10V 10 VGS= 8V 25 14V 18V 16V Tvj = 25ºC Pulsed 12V 20 15 10V 10 VGS= 8V 5 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tvj = 25ºC 3rd Quadrant Characteristics 0 Tvj = 25ºC Pulsed Drain Current : ID [A] -10 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -20 -30 -40 -50 -60 -70 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lElectrical characteristic curves Fig.7 Tvj = 150ºC Typical Output Characteristics(I) Fig.8 Tvj = 150ºC Typical Output Characteristics(II) 70 35 20V 20V 14V 18V 12V 10V 40 30 20 VGS= 8V 10 0 2 4 6 8 10V 20 15 VGS= 8V 10 Tvj = 150ºC Pulsed 0 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.9 Tvj = 150ºC 3rd Quadrant Characteristics Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage 6 Body Diode Forward Voltage : VSD [V] 0 Tvj = 150ºC Pulsed -10 Drain Current : ID [A] 12V 25 5 Tvj = 150ºC Pulsed 0 14V 16V 16V 50 18V 30 Drain Current : ID [A] Drain Current : ID [A] 60 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -20 -30 -40 -50 -60 -70 ID=27A 5 4 3 2 Tvj= 150ºC 1 Tvj= 25ºC 0 -10 -8 -6 -4 -2 0 -4 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 70 100 VDS = 10V Pulsed 60 10 Tvj= Tvj= Tvj= Tvj= 1 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed 150ºC 75ºC 25ºC -25ºC 0.1 50 40 Tvj= Tvj= Tvj= Tvj= 30 20 150ºC 75ºC 25ºC -25ºC 10 0 0.01 0 2 4 6 0 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Virtual Junction Temperature Fig.14 Transconductance vs. Drain Current 10 6 VDS = 10V ID = 13.3mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 2 4 3 2 1 VDS = 10V Pulsed 1 Tvj = 150ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC 0.1 0 -50 0 50 100 150 0.1 200 Virtual Junction Temperature : Tvj [ºC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 8/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Virtual Junction Temperature 0.12 0.06 Tvj = 25ºC Pulsed 0.10 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] lElectrical characteristic curves ID= 47A 0.08 0.06 ID= 27A 0.04 ID= -27A 0.02 VGS = 18V Pulsed 0.05 0.04 ID= 27A ID= 47A 0.03 ID= -27A 0.02 0.01 0.00 0.00 8 10 12 14 16 18 20 -50 22 Gate - Source Voltage : VGS [V] 0 50 100 150 200 Virtual Junction Temperature : Tvj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Fig.18 Normalized Drain - Source Breakdown Voltage vs. Virtual Junction Temperature 1.04 VGS = 18V Pulsed Normalized Drain - Source Breakdown Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.1 Tvj = 150ºC Tvj = 125ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC 1.03 1.02 1.01 1.00 0.99 0.98 0.01 1 10 -50 100 Drain Current : ID [A] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 50 100 150 200 Virtual Junction Temperature : Tvj [ºC] 9/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 10000 20 Tvj = 25ºC Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Ciss 1000 Coss 100 Crss 10 Tvj = 25ºC f = 1MHz VGS = 0V 1 15 10 5 0 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] 0 100 200 300 400 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Tvj = 25ºC VDD = 300V ID = 27A Pulsed 15 10 5 0 0 20 40 60 80 100 120 Total Gate Charge : Qg [nC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lElectrical characteristic curves Fig.22 Typical Switching Time 　　　　　vs. External Gate Resistance Fig.23 Typical Switching Loss 　　　　　vs. Drain - Source Voltage 160 400 Switching Time : t [ns] 140 120 100 tr tf td(off) 80 60 40 20 Tvj = 25°C ID = 27A VGS= +18V/0V RG = 0Ω 350 Switching Energy : E [µJ] Tvj = 25°C VDD= 400V VGS= +18V/0V ID = 27A L = 750μH 300 L= 200 Eon 150 100 Eoff 50 td(on) 0 0 0 10 20 100 30 External Gate Resistance : RG [Ω] 200 300 400 Fig.25 Typical Switching Loss 　　　　　vs. External Gate Resistance 1200 1200 Tvj = 25°C VDD= 400V VGS= +18V/0V RG = 0Ω L= Tvj = 25°C ID = 27A VDD= 400V VGS= +18V/0V 1000 Switching Energy : E [µJ] 800 750μH 600 Eoff 400 Eon 200 500 Drain - Source Voltage : VDS [V] Fig.24 Typical Switching Loss 　　　　　vs. Drain Current 1000 Switching Energy : E [µJ] 750μH 250 800 L= 750μH Eon 600 Eoff 400 200 0 0 0 0 10 20 30 40 50 60 70 80 10 15 20 25 30 External Gate Resistance : RG [Ω] Drain Current : ID [A] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 11/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lMeasurement circuits and waveforms Fig.1-1 Gate Charge Measurement Circuit Fig.2-1 Switching Characteristics Measurement Circuit Fig.2-2 Waveforms for Switching Time Fig.2-3 Waveforms for Switching Energy Loss Eon = ‫ ׬‬ID ∙ VDS dt VDS Irr Eoff = ‫ ׬‬ID ∙ VDS dt Vsurge ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/15 Fig.3-2 Reverse Recovery Waveform TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lPackage Dimensions Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 13/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 RECOMMENDED FOOTPRINT DIMENSIO NS Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 14/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Datasheet SCT3030AW7 lDie Bonding Layout : Die position ・Front view of the packaging. ・Dimensions are design values. ・If the heat sink is to be installed, it should be in contact with the die bonding point. Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 15/15 TSQ50252-SCT3030AW7 1.Nov.2022 - Rev.002 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. 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Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. R1107 S Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001