US6M11TR

1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Unit : mm) TUMT6 0.2Max. SOT-363T zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 zApplications Switching zInner circuit (6) (5) (4) ∗1 zPackaging specifications Package Taping TR Code Type ∗2 ∗2 Basic ordering unit (pieces) 3000 ∗1 US6M11 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Limits Unit Tr1 : Nchannel Tr2 : Pchannel 20 V −12 ±10 ±10 V ±1.5 ±1.3 A ±6 ±5.2 A 0.5 −0.5 A 6 −5.2 A 1.0 W / TOTAL Tch Tstg 0.7 150 −55 to +150 W / ELEMENT °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/7 2009.07 - Rev.A US6M11 Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 20 − 0.3 − − − − 1.6 − − − − − − − − − − Typ. Max. − − − − 130 170 220 300 − 110 18 15 5 5 20 3 1.8 0.3 0.3 ±10 − 1 1.0 180 240 310 600 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 2.5V ID= 0.8A, VGS= 1.8V ID= 0.3A, VGS= 1.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 1A VGS= 4.5V RL 10Ω RG=10Ω VDD 10V, VGS= 4.5V ID= 1.5A RL 6.7Ω, RG= 10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS= 1.5A, VGS=0V Typ. Max. − − − − 190 280 400 530 − 290 28 21 8 10 30 9 2.4 0.6 0.4 ±10 − −1 −1.0 260 390 600 1060 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS= ±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −1.3A, VGS= −4.5V ID= −0.6A, VGS= −2.5V ID= −0.6A, VGS= −1.8V ID= −0.2A, VGS= −1.5V VDS= −6V, ID= −1.3A VDS= −6V VGS= 0V f=1MHz VDD −6V ID= −0.6A VGS= −4.5V RL 10Ω RG= 10Ω VDD −6V, VGS= −4.5V ID= −1.3A RL 4.6Ω, RG= 10Ω ∗Pulsed zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS −12 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −0.3 − − Static drain-source on-state ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 1.4 Ciss Input capacitance − Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time Qg ∗ − Total gate charge Qgs ∗ − Gate-source charge Qgd ∗ − Gate-drain charge Conditions ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −1.3A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/7 2009.07 - Rev.A US6M11 Data Sheet zElectrical characteristic curves 1.5 1 VGS= 1.5V VGS= 1.8V VGS= 1.3V 0.5 10 Ta=25°C Pulsed VGS= 4.5V VGS= 1.8V DRAIN CURRENT : ID [A] Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 2.5V DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 1.5 VGS= 1.5V 1 VGS= 1.3V 0.5 VDS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 VGS= 1.1V VGS= 1.2V 0 0 0.4 0.6 0.8 0.001 0 1 2 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 1000 0.1 1 10 0.01 10 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 VGS= 1.5V Pulsed 0.1 0.1 1 DRAIN-CURRENT : ID [A] DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/7 1 10 DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100 10 0.01 2 100 10 0.01 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 1.5 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 Resistance vs. Drain Current(Ⅱ) 10000 1 1 1 VGS= 2.5V Pulsed DRAIN-CURRENT : ID [A] VGS= 1.8V Pulsed 0.1 10000 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 0.01 0.5 GATE-SOURCE VOLTAGE : VGS[V] 100 DRAIN-CURRENT : ID [A] 1000 0 Fig.3 Typical Transfer Characteristics Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.4 Static Drain-Source On-State 10000 10 VGS= 4.5V Pulsed 1000 100 10 0.01 8 Fig.2 Typical Output Characteristics(Ⅱ) 10000 Ta= 25°C Pulsed 6 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 10000 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 0.2 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0 10 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.07 - Rev.A US6M11 600 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 500 ID = 0.8A 400 ID = 1.5A 300 200 0.5 1 0 CAPACITANCE : C [pF] 2 Ta=25°C VDD = 10V ID = 1.5A RG=10Ω Pulsed 0 0 0.5 1 1.5 4 6 8 10 10 td(on) 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 1 2 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 3 tf 100 tr 1.5 4 td(off) 1 SOURCE-DRAIN VOLTAGE : VSD [V] 5 Ta=25°C VDD = 10V VGS=4.5V RG=10Ω Pulsed 100 0 0 GATE-SOURCE VOLTAGE : VGS [V] 1000 Ta=25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : Is [A] 10 Data Sheet Fig.12 Switching Characteristics Ta=25°C f=1MHz VGS=0V Ciss 100 Coss Crss 10 2 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 4/7 2009.07 - Rev.A US6M11 Data Sheet 2 VGS= -10V VGS= -4.5V VGS= -2.5V 1.5 VGS= -1.8V 1 VGS= -1.5V 0.5 VGS= -1.2V 0 0.2 0.4 0.6 0.8 VGS= -1.2V VGS= -1.0V 0.5 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 2 4 6 8 0 10 0.5 1 1.5 GATE-SOURCE VOLTAGE : -VGS[V] Fig.2 Typical output characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics 10000 Ta=25°C Pulsed VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.1 1 VGS= -4.5V Pulsed 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 10 DRAIN-CURRENT : -ID [A] 0.1 1 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 10 0.01 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 DRAIN-CURRENT : -ID [A] DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/7 1 10 DRAIN-CURRENT : -ID [A] VGS= -1.5V Pulsed 100 0.1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 1000 10 0.01 1000 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= -1.8V Pulsed 2 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 100 10000 10 0.01 10 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(Ⅰ) 10 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 1 DRAIN-SOURCE VOLTAGE : -VDS[V] 1000 10000 VDS= -6V Pulsed 0.001 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] VGS= -1.5V 1 0 0 10000 VGS= -4.5V VGS= -2.5V VGS= -1.8V 1.5 10 Ta=25°C Pulsed DRAIN CURRENT : -ID [A] Ta=25°C Pulsed DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 2 10 VDS= -6V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.07 - Rev.A VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 600 Ta=25°C Pulsed 500 ID = -0.6A 400 ID = -1.3A 300 200 1000 SWITCHING TIME : t [ns] REVERSE DRAIN CURRENT : -Is [A] 10 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] US6M11 td(off) 100 10 100 td(on) tr 0 0.01 0 0.5 1 0 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] 2 4 6 8 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics 1000 5 4 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C VDD = -6V VGS= -4.5V RG=10Ω Pulsed tf 3 2 Ta=25°C VDD = -6V ID = -1.3A RG=10Ω Pulsed 1 0 100 Ciss Coss 10 Crss Ta=25°C f=1MHz VGS=0V 1 0 0.5 1 1.5 2 2.5 3 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 6/7 2009.07 - Rev.A US6M11 Data Sheet zMeasurement circuit VGS ID VDS Pulse Width RL VDS 50% 10% VDD RG 90% 50% 10% VGS D.U.T. 10% 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tr toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG (Const.) Qgs Qgd VDD RG Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS Pulse Width ID VDS VGS 10% 50% RL D.U.T. RG 90% 10% VDD VDS Fig.3-1 Switching Time Measurement Circuit 10% 90% td(on) 90% td(off) tr ton tr toff Fig.3-2 Switching Waveforms VG ID VDS VGS Qg RL IG(Const.) 50% VGS D.U.T. Qgs RG Qgd VDD Charge Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. 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