2SD965A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD965A SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES z Audio amplifier z Flash unit of camera z Switching circuit 2. COLLECTOR 3. EMITTER MARKING: 965A MAXIMUM RATINGS (Ta =25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 5 A 750 mW 167 ℃/W PC RθJA Collector Power Dissipation Thermal Resistance From Junction To Ambient TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA. IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 7 V Collector cut-off current ICBO VCB= 10V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V, IC=0 0.1 μA hFE(1) VCE= 2 V, IC=1mA hFE’(2) VCE= 2V, IC = 500mA 230 hFE(3) VCE= 2V, IC =2A 150 VCE(sat) IC=3A, IB=0.1A DC current gain Collector-emitter saturation voltage Transition frequency fT Out capacitance Cob VCE=6V, IC=50mA 200 800 1 150 V MHz VCB=20 V , IE=0, f=1MHZ 50 pF CLASSIFICATION OF hFE(2) Rank Range Q 230-380 R 340-600 S 560-800 B,Feb,2013